Anisotropic Electron Conductance Driven by Reaction Byproducts on a Porous Network of Dibromobenzothiadiazole on Cu(110)

Efficiency in charge‐transport is a fundamental but demanding prerequisite to allow better exploitation of molecular functionalities in organic electronics and energy‐conversion systems. Here, we report on a mechanism that enables a one‐dimensional conductance structure by connecting discrete molecular states at 2.1 eV through the pores of a metal–organic network on Cu(110). Two adjacent, periodic and isoenergetic contributions, namely a molecular resonance and the confined surface‐state, add‐up leading to anisotropic structures, as channels, observable in real‐space conductance images. The adsorption configurations of Br atoms, inorganic byproduct of the redox‐reacted 4,7‐dibromobenzo[c]‐1,2,5‐thiadiazole (2Br‐BTD) molecules on the copper surface, drive the confinement of the Cu surface state within the pores and critically control the channel continuity. Small displacements of the Br atoms change the local surface potential misaligning the energy levels. This work visualizes the effect of order‐disorder transitions caused by the movement of single atoms in the electronic properties of two‐dimensional organic networks.     

正常金属-铁磁绝缘层-dx2-y2+idxy混合波超导结中的磁散射对隧道谱的影响

在正常金属铁磁绝缘层dx2-y2 idxy混合波超导隧道结中,考虑到铁磁绝缘层的磁散射和界面的粗糙散射效应,运用BogoliubovdeGennes(BdG)方程和BlonderTinkhamKlapwijk(BTK)理论,计算了隧道结中的准粒子传输系数和微分电导.研究表明:(1)磁散射和界面粗糙散射均可以压低电导峰,其中磁散射能使电导峰滑移,而粗糙界面散射却能阻止这种滑移,且两散射的共同作用可抑制由混合波两序参数的幅值比不同所导致的电导峰滑移;(2)随铁磁层离超导表面距离的增加,隧道谱在零偏压处由凹陷变成了零偏压电导峰,继而又演化为凹陷中的中心峰;(3)当铁磁层离开超导表面有若干相干长度时,隧道谱中将呈现一些子能级谐振峰.     

Thermal Conductance of Graphene-Titanium Interface: A Molecular Simulation

Titanium is a commonly used material in aviation, aerospace, and military applications, due to the outstanding mechanical properties of titanium and its alloys. However, its relatively low thermal conductivity restricts its extended usage. The use of graphene as a filler shows great potential for the enhancement of thermal conductivity in titanium-based metal-matrix composites (MMCs). We used classical molecular dynamics (MD) simulation methods to explore the thermal conductance at the titanium–graphene (Ti/Gr) interface for its thermal boundary conductance, which plays an important role in the thermal properties of Ti-based MMCs. The effects of system size, layer number, temperature, and strain were considered. The results show that the thermal boundary conductance (TBC) decreases with an increasing layer number and reaches a plateau at n = 5. TBC falls under tensile strain and, in turn, it grows with compressive strain. The variation of TBC is explained qualitatively by the interfacial atomic vibration coupling factor. Our findings also provide insights into ways to optimize future thermal management based on Ti-based MMCs materials.     

8-氨基喹啉-5-磺酸-示波计时电位法快速测定天然水体中锌形态

报道了8-氨基喹啉-5-磺酸(简称8-AQS)-示波计时电位法分别在酸性和碱性条件下测定了天然水样中的锌浓度,发现在酸性下测定的是无机不安定态锌c(Zni),而在碱性下测定的是总溶解态锌c(Zna)。并用该法测定了酸消化水样中的总锌c(ZnT),由c(Zna)-c(Zni)间接得到有机安定态c(Zn0),c(ZnT)-c(Zna)得到颗粒态酸溶态锌c(ZnT),据此可以实现对五种锌形态的区分。测定了10多个实际水样,与经典的离子交换-AES方法进行了对照,结果基本一致。     

石墨烯基生物分子传感器件的第一性原理研究

基于第一性原理模拟, 我们构建了一种具有石墨烯电极的纳米间隙生物分子传感器件的理论模型. 研究发现,当碱基分子胞嘧啶、甲基化胞嘧啶和羟甲基化胞嘧啶分别通过器件时, 器件横向电流的大小差异约有1个数量级, 器件对此类分子具有一定的分辨能力. 分子之间的区分度大小受单链脱氧核糖核酸(DNA)中相邻碱基分子间的相互作用及碱基分子构型的影响. 研究工作表明, 此类石墨烯基分子传感器可准确高效地区分具有不同结构的碱基分子, 为准确定位DNA链中的变异碱基分子提出了一种新的思路.     

离子导电聚合物电解质的研究*

本文对离子导电聚合物电解质的发展史、分类、导电机理、研究方法及离子导电聚合物电解质电导率提高的途径进行了综述分析,并讨论了今后工作的发展方向。     

GaN发光二极管表观电容极值分析

利用正向交流(ac)小信号方法对GaN发光二极管的电容-电压特性进行测量,可以观察到GaN发光二极管中的负电容现象。正向偏压越大,测试频率越低,负电容现象越明显。测量到的负电容现象是表象,不存在负电容;提出GaN发光二极管p-n结的结电容在特定的正向电压范围内等效于可变电容。分析可变电容对正向交流小信号响应得到:特定参数的可变电容使结电容电流相位落后于交流小信号电压相位π/2,使得在测量中表现为负电容。发现表观电容-正向电压曲线的极值点与理论模型相吻合,证明了该理论模型的正确性。     

Study of magnetotransport properties of interacting quantum dot systems using the ECA method

We study the magnetotransport of the interacting QD system in a magnetic field using the numerical method of embedded-cluster approximation (ECA). The spin-resolved conductances display different magnetic field dependences for different transport regimes. Through comparison of conductance polarization, the mixed-valence regime shows the largest polarization. The spin-resolved conductance as a function of the ratio between the magnetic field and Kondo temperature H/TK is found to exhibit an approximate universal behavior in the Kondo regime. We also investigate conductance dependence on interaction strength and find interesting inversion of sign of polarization in some cases.     

Interacting quantum wires: A possible explanation for the 0.7 anomalous conductance

We investigate an effective one-dimensional conducting channel considering both the contact umklapp and the Coulomb electron-electron interaction. We show that, at low electronic density, the proximity to the Wigner crystal reproduces the anomaly in conductance at 0.7G₀. The crucial ingredient of our theory is the fact that the gate voltage acts as a bias controlling the intensity of the umklapp term. At large gate voltages, the umklapp vanishes and we obtain a conducting quantum wire with a perfect conductance. At low gate voltages, the Wigner crystal is pinned by the umklapp term, giving rise to an insulating behavior with vanishing conductance. This crossover pattern has a transition point which can be identified with the anomalous conductance around 0.7G₀. This picture is obtained within the framework of a renormalization group calculation. The conductance static regime is achieved by taking first the limit of finite length and then the limit of zero frequency.     

Spin-polarized quasiparticle transport in ferromagnet/insulator/p-wave superconductor junction

We have studied the tunneling conductance in ferromagnet/insulator/p-wave superconductor junctions, taking into account the rough interface scattering effect. We find that there exist zero-bias conductance peaks and single-minimum structure in tunneling spectroscopy. As the exchange energy increases, the Andreev reflection is always suppressed and the differential conductance decreases. The differential conductance depends on the barrier strength and the roughness at the interface. Supported by the Natural Science Foundation of Jiangsu Higher Education Institutions, China (Grant No. 06KJB140009)