Electrical Resistance Measurement of an Individual Carbon Nanotube

Aiming at the difficulty in the electrical resistance measurement, we develop a simple statistical model for the carbon nanotubes adequately dispersed in available insulated liquid and introduce the concept of “the most probability”. Based on this model, we obtain the function between macroscopic resistance R and resistance of an individual nanotube, Ro, from which one can calculate the resistance of an individual nanotube by measuring the macroscopic resistance. By computational simulation, we prove the reliability of the model. Then, we analyse the feasibility of the model when applied to experiment.     

薄膜物理及其应用讲座：第三讲 非晶半导体薄膜最新进展

介绍了非晶半导体薄膜的结构特点和在光电器件上的独特性能，给出了薄膜器件的发展水平和制膜技术、制膜设备的研究现状。     

A—H键振动频率规律性的研究

国内外学者对氢化物A—H键振动频率V_(A-H)规律性的研究做了不少工作,取得一些成果。但对其普遍规律性尚缺乏深入系统的研究,大多公式涉及常数或参数较多,就用面窄,准确性差。文献就分子的整体作用探讨了A—H键振动频率的规律性,取得较为满意的结果,但其中又涉及到另一个需要求算的参数电负性,从而影响了用分子内在性质直接反应振动频率V_(A-H)的规律性。     

PECVDSiON薄膜的工艺控制,性质及其潜在应用

研究了等离子增强化学气相淀积氮氧化硅薄膜的工艺控制、性质以及薄膜波导在超大规模集成电路光互连中的潜在应用。     

酞菁钴薄膜的折射率及吸收特性

通过真空镀法在单晶硅片上制备了酞菁钴薄膜，在波长扫描和入射角可变全自动椭圆偏振光谱仪上研究了ＣｏＰｃ薄膜的椭偏光谱并分析了其电子结构。     

G(F4′)条件与加强形式的停止定理

首次提出了Ｇ（Ｆ４′）条件，给出了Ｇ（Ｆ４′）条件的两个等价关系，得到了加强形式的停止定理和强鞅的一个等价关系．     

Effects of Post-Thermal Treatment on Quality of SiC Grown by PVT Method

We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals.