Raman scattering investigations on Co-doped ZnO epitaxial films: Local vibration modes and defect associated ferromagnetism

Raman scattering spectroscopy has been performed on high quality Co-doped ZnO epitaxial films, which were grown on Al₂O₃ (0001) by oxygen-plasma assisted molecular beam epitaxy. Raman measurements revealed two local vibration modes (LVMs) at 723 and 699 cm⁻¹ due to the substitution of Co²⁺ in wurtzite ZnO lattice. The LVM at 723 cm⁻¹ is found to be an elemental sensitive vibration mode for Co substitution. The LVM at 699 cm⁻¹ can be attributed to enrichment of Co²⁺ bound with oxygen vacancy, the cobalt–oxygen vacancy–cobalt complexes, in Zn_1−xCo_xO films associated with ferromagnetism. The intensity of LVM at 699 cm⁻¹, as well as saturated magnetization, enhanced after the vacuum annealing and depressed after oxygen annealing.     

How photocatalytic activity of the MAO-grown TiO2 nano/micro-porous films is influenced by growth parameters?

Pure titania porous layers consisted of anatase and rutile phases, chemically and structurally suitable for catalytic applications, were grown via micro-arc oxidation (MAO). The effect of applied voltage, process time, and electrolyte concentration on surface structure, chemical composition, and especially photocatalytic activity of the layers was investigated. SEM and AFM studies revealed that pore size and surface roughness of the layers increased with the applied voltage, and the electrolyte concentration. Moreover, the photocatalytic performance of the layers synthesized at medium applied voltages was significantly higher than that of the layers produced at other voltages. About 90% of methylene blue solution was decomposed after 180 min UV-irradiation on the layers produced in an electrolyte with a concentration of 10 g l⁻¹ at the applied voltage of 450 V.     

原子吸收光谱法测定粉煤灰中氧化镁

采用火焰原子吸收光谱法测定粉煤灰中氧化镁的含量。用氢氟酸-高氯酸混合酸分解样品,以氯化锶消除其他元素的干扰。本方法操作简便、再现性好、灵敏度高,氧化镁浓度在0.10—2.00μg/mL之间线性关系良好,检出限可达0.02%,适用于粉煤灰中氧化镁的测定。     

The effect of oxygen vacancy on the oxide ion mobility in LaAlO3-based oxides

The electrical property of (La_1−xSr_x)_1−z(Al_1−yMg_y)O_3−δ (LSAM; x≤0.3, y≤0.15 and z≤0.1) was measured using the DC four-probe method as a function of temperature (500–1000°C) and oxygen partial pressure (1–10⁻²² atm). Among LSAMs, (La_0.9Sr_0.1)AlO_3−δ showed the highest ionic conductivity, σ_i=1.3×10⁻² S cm⁻¹ at 900°C. A simultaneous substitution at A and B sites or A site deficiency is expected to create larger oxygen vacancy and higher ionic conductivity. However, it showed a negative effect. The effect of the vacancy increase did not effect monotonously the ionic conductivity. It was found that the concentration of oxygen vacancy, [V_O], influences not only the oxide ion conductivity, σ_i, but also the mobility, μ_v, of [V_O]. These properties exhibit a maximum at around [V_O]=0.05. With the increase in [V_O], the activation energy, E_a, of the ionic conduction dropped from 1.8 to ca. 1.0 eV at [V_O]=0.05 and became almost constant at [V_O]>0.05. The dependency of the pre-exponential term, μ⁰_v, and E_a on [V_O] was analyzed and their effect on μ_v and σ_i was discussed with respect to crystal structure and defect association. It was estimated that the crystal structure mainly governs these properties. The effect of defect association could not be ignored but is considered to be a complicated correlation.     

Influence of buffer layer thickness on the structure and optical properties of ZnO thin films

A series of ZnO thin films were deposited on ZnO buffer layers by DC reactive magnetron sputtering. The buffer layer thickness determination of microstructure and optical properties of ZnO films was investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and absorption measurements. XRD results revealed that the stress of ZnO thin films varied with the buffer layer thickness. With the increase of buffer layer thickness, the band gap edge shifted toward longer wavelength. The near-band-edge (NBE) emission intensity of ZnO films deposited on ZnO buffer layer also varied with the increase of thickness due to the spatial confinement increasing the Coulomb interaction between electrons and holes. The PL measurement showed that the optimum thickness of the ZnO buffer layer was around 12 nm.     

Influence of oxidation time on semiconductive behaviour of thermally grown oxide films on AISI 304L

The oxide films formed on AISI 304L stainless steel at 300 °C in the oxidation time range between 2 and 4 h have been studied by photoelectrochemistry. Photocurrents were investigated as a function of the wavelength of the incident light and the electrode potential. The investigation allowed the determination of the semiconductive properties of the oxides. The oxide films showed n-type behaviour. A duplex structure of the oxide films has been suggested on the basis of the photocurrent spectra, with an internal oxide layer having an optical gap (E_g2 = 2.16-2.3 eV) depending on the applied potential and oxidation time, higher to that of the external oxide layer (E_g1 ≈ 1.9 eV). Significant variations in the amplitude of the photocurrent were detected as a function of the applied potential and the oxidation time.     

Monte Carlo study of interfacial silicon suboxide layers and oxidation kinetics

A simple simulation scheme that simultaneously describes the growth kinetics of SiO₂ films at the nanometer scale and the SiO_x/Si interface dynamics (its extent, and spatial/temporal evolution) is presented. The simulation successfully applies to experimental data in the region above and below 10 nm, reproduces the Deal and Grove linear-parabolic law and the oxide growth rate enhancement in the very thin film regime (the so-called anomalous region). According to the simulation, the oxidation is governed mainly by two processes: (a) the formation of a transition suboxide layer and (b) its subsequent drift towards the silicon bulk. We found that it is the superposition of these two processes that produces the crossover from the anomalous oxidation region behavior to the linear-parabolic law.     

用发射光谱分析法检测地膜中金属杂质含量

本文描述农用薄膜中Ａｌ、Ｆｅ、Ｍｇ、Ｃａ、Ｓｉ、Ｃｕ、Ｔｉ杂质元素的发射光谱分析法，该方法直接压样于石墨电极中，简便，快速，取得了满意的结果。     

四氧化三钴粉末的沉淀法制备及表征

以硝酸钴为钴源,碳酸铵为沉淀剂,采用沉淀法制备四氧化三钴粉体。采用TG、XRD、IR、激光粒度分析仪等对前驱体碱式碳酸钴和产物四氧化三钴进行了表征及分析。研究了焙烧温度、反应物浓度和反应时间等因素对产物的影响。     

ICP-AES测定南方离子型稀土精矿中稀土配分

采用 ICP- AES同时测定了南方离子型稀土精矿中 L a、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu和 Y组分的含量。选择了合适的分析线 ,确定了各元素的检出限为 0 .0 4— 13.6 μg/L,加标回收率为 90 %— 110 %。方法准确、快速、简便 ,已用于生产实践中