基于FDTD的时域混合方法及其在天线前门耦合数值模拟中的应用

强电磁脉冲环境下的平台-机载天线一体化耦合计算属于典型多尺度时域电磁计算问题,采用传统的FDTD方法数值模拟时,由于精细结构的存在导致网格量巨大,计算效率低下。介绍了一种将非均匀FDTD方法与细导线FDTD方法以及多网格集总元件FDTD方法相结合的时域混合方法,能够有效降低计算开销,结合并行计算技术,快速计算得到天线端口上耦合产生的瞬态电压和电流响应,并将该方法成功应用于无人机平台-天线一体化前门耦合数值模拟中。     

Magnetic anisotropy manipulation and interfacial coupling in Sm3Fe5O12 films and CoFe/Sm3Fe5O12 heterostructures

The magnetic anisotropy manipulation in the Sm₃Fe₅O₁₂ (SmIG) films and its effect on the interfacial spin coupling in the CoFe/SmIG heterostructures were studied carefully. By switching the orientation of the Gd₃Ga₅O₁₂ substrates from (111) to (001), the magnetic anisotropy of obtained SmIG films shifts from in-plane to out-of-plane. Similar results can also be obtained in the films on Gd₃Sc₂Ga₃O₁₂ substrates, which identifies the universality of such orientation-induced magnetic anisotropy switching. Additionally, the interfacial spin coupling and magnetic anisotropy switching effect on the spin wave in CoFe/SmIG magnetic heterojunctions have also been explored by utilizing the time-resolved magneto-optical Kerr effect technique. It is intriguing to find that both the frequency and effective damping factor of spin precession in CoFe/SmIG heterojunctions can be manipulated by the magnetic anisotropy switching of SmIG films. These findings not only provide a route for the perpendicular magnetic anisotropy acquisition but also give a further path for spin manipulation in magnetic films and heterojunctions.     

Oxygen vacancy control of electrical,optical, and magnetic properties of Fe0.05Ti0.95O2 epitaxial films

High-quality Fe-doped TiO₂ films are epitaxially grown on MgF₂ substrates by pulsed laser deposition. The x-ray diffraction and Raman spectra prove that they are of pure rutile phase. High-resolution transmission electron microscopy (TEM) further demonstrates that the epitaxial relationship between rutile-phased TiO₂ and MgF₂ substrates is 110 TiO₂₂. The room temperature ferromagnetism is detected by alternative gradient magnetometer. By increasing the ambient oxygen pressure, magnetization shows that it decreases monotonically while absorption edge shows a red shift. The transport property measurement demonstrates a strong correlation between magnetization and carrier concentration. The influence of ambient oxygen pressure on magnetization can be well explained by a modified bound magnetization polarization model.     

Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

We demonstrate a simple, low‐cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono‐crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma‐assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in‐situ Czochralski process. We show well‐behaved high‐κ /metal gate metal–oxide–semiconductor capacitors (MOSCAPs) using this film. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

脉冲激光沉积法制备的ZnO薄膜的低阈值电抽运紫外随机激射

分别采用直流反应溅射法和脉冲激光沉积法在硅衬底上沉积ZnO薄膜, 用X射线衍射、扫描电镜、光致发光谱等手段对两种方法沉积的ZnO薄膜的结晶状态、 表面形貌和光致发光等进行了表征. 进一步对比研究了以上述两种方法制备的ZnO薄膜作为发光层的金属-绝缘体-半导体结构器件的电抽运紫外随机激射. 结果表明, 与以溅射法制备的ZnO薄膜作为发光层的器件相比, 以脉冲激光沉积法制备的ZnO薄膜为发光层的器件具有更低的紫外光随机激射阈值电流和更高的输出光功率. 这是由于脉冲激光沉积法制备的ZnO薄膜中的缺陷更少, 从而显著地减少了紫外光在光散射过程中的光损耗. 关键词： 随机激射 ZnO薄膜 脉冲激光沉积 溅射     

直流磁控溅射厚度对Cu(Inx,Ga1-x)Se2背接触Mo薄膜性能的影响

采用直流磁控溅射工艺, 在一定条件下通过控制溅射时间, 在钠钙玻璃上制备了不同厚度的用于Cu(In_x, Ga_1-x)Se₂薄膜太阳电池背接触材料的Mo薄膜, 并利用X射线衍射 (XRD)、场发射扫描电子显微镜 (SEM)、四探针测试仪、台阶仪研究了厚度对溅射时间、薄膜微结构、电学性能及力学性能的交互影响. Mo薄膜的厚度与溅射时间呈线性递增关系; 随厚度的增大, Mo薄膜 (110) 和 (211) 面峰强均逐渐增大, 择优生长从(110)方向逐渐向 (211)方向转变, 方块电阻值只随 (110) 方向上的生长而急剧减小直到一特定值约2 Ω/⇑, 电导率随薄膜的 (110) 择优取向程度的降低而线性减小直到一特定值约0.96×10^-4 Ω·cm; Mo薄膜内部是一种多孔的长形簇状颗粒和颗粒间隙交织的结构, 并处于拉应力态, 其内部应变随薄膜厚度的增大而减小. 关键词： Mo薄膜 CIGS背接触 厚度 微结构     

不同衬底和CdCl2退火对磁控溅射CdS薄膜性能的影响

在科宁7059玻璃, FTO, ITO, AZO四种衬底上磁控溅射CdS薄膜, 并在CdCl₂+干燥空气380 ℃退火, 分别研究了不同衬底和退火工艺对CdS薄膜形貌、结构和光学性能的影响. 扫描电子显微镜形貌表明: 不同衬底原位溅射CdS薄膜的形貌不同, 退火后相应CdS薄膜的晶粒度和表面粗糙度明显增大. XRD衍射图谱表明: 不同衬底原位溅射和退火CdS薄膜均为六角相和立方相的混相结构, 退火前后科宁7059玻璃, FTO, AZO衬底上CdS薄膜有 H(002)/C(111) 最强衍射峰, ITO衬底原位溅射CdS薄膜没有明显的最强衍射峰, 退火后出现 H(002)/(111) 最强衍射峰. 紫外-可见分光光度计分析表明: AZO, FTO, ITO, 科宁7059玻璃衬底CdS薄膜的可见光平均透过率依次减小, 退火后相应衬底CdS薄膜的可见光平均透过率增大, 光学吸收系数降低; 退火显著增大了不同衬底CdS薄膜的光学带隙. 分析得出: 上述结果是由于不同衬底类型和退火工艺对CdS多晶薄膜的形貌、结构和带尾态掺杂浓度改变的结果. 关键词： CdS薄膜 磁控溅射 退火再结晶 带尾态     

FeMn掺杂AlN薄膜的制备及其特性研究

采用直流磁控共溅射技术, 以Ar与N₂为源气体, 硅片为衬底成功地制备了Fe, Mn掺杂AlN薄膜. 利用X射线衍射和拉曼光谱研究了工作电流、靶基距离等工艺参数的改变对薄膜结构的影响. 利用扫描电子显微镜和能谱分析仪对薄膜的表面形貌和组成成分进行了分析. 利用振动样品磁强计在室温下对Fe, Mn掺杂AlN薄膜进行了磁性表征. Mn掺杂AlN薄膜表现出顺磁性的原因可能是由于Mn掺杂浓度较高, 在沉积过程部分Mn以团簇的形式存在, 反铁磁性的Mn团簇减弱了体系的铁磁交换作用. Fe掺杂AlN薄膜表现出室温铁磁性, 这可能是AlFeN三元化合物作用的结果. 随着Fe 掺杂AlN薄膜中Fe原子浓度从6.81%增加到16.17%, 其饱和磁化强度M_s由0.27 emu·cm^-3逐渐下降到0.20 emu·cm^-3, 而矫顽力H_c则由57 Oe增大到115 Oe (1 Oe=79.5775 A/m), 这一现象与Fe离子间距离的缩短及反铁磁耦合作用增强有关. 关键词： 直流磁控共溅射 氮化铝薄膜 结构 磁性     

High performance Zn–Sn–O thin film transistors with Cu source/drain electrode

Zn–Sn–O (ZTO) thin film transistors (TFTs) were fabricated with a Cu source/drain electrode. Although a reasonably high mobility (μ_FE) of 13.2 cm²/Vs was obtained for the ZTO TFTs, the subthreshold gate swing (SS) and threshold voltage (V_th) of 1.1 V/decade and 9.1 V, respectively, were inferior. However, ZTO TFTs with Ta film inserted as a diffusion barrier, exhibited improved SS and V_th values of 0.48 V/decade and 3.0 V, respectively as well as a high μ_FE value of 18.7 cm²/Vs. The improvement in the Ta‐inserted device was attributed to the suppression of Cu lateral diffusion into the ZTO channel region. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Semipolar (11\bar 2\bar 2) ZnO thin films grown on LaAlO3‐buffered LSAT (112) single crystals by pulsed laser deposition

Semipolar (11\bar 2 \bar 2) ZnO was successfully grown on (112) LaAlO₃/(LaAlO₃)_0.29(Sr₂AlTaO₆)_0.35 substrate by pulsed laser deposition. The epitaxial relationship is [11\bar 23]_{\rm ZnO} // [11\bar 1]_{\rm LAO/LSAT} with the polar axis of [000\bar 1]_{\rm ZnO} pointing to the surface. For ZnO films with thickness of 1.6 μm, the threading dislocation density is ～1 × 10⁹ cm^–2, and the density of basal stacking faults is below 1 × 10⁴ cm^–1. The (11\bar 2 \bar 2) ZnO exhibits strong D⁰X emissions with a FWHM of 9 meV and very few green–yellow emissions in the low‐temperature (10 K) and room‐temperature photoluminescence spectra, respectively.