Structural, optical properties and VCNR mechanisms in vacuum evaporated iodine doped ZnSe thin films

Iodine doped ZnSe thin films were prepared onto uncoated and aluminium (Al) coated glass substrates using vacuum evaporation technique under a vacuum of 3 × 10⁻⁵ Torr. The composition, structural, optical and electrical properties of the deposited films were analyzed using Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), spectroscopic ellipsometry (SE) and study of I-V characteristics, respectively. In the RBS analysis, the composition of the deposited film is calculated as ZnSeI_0.003. The X-ray diffractograms reveals the cubic structure of the film oriented along (1 1 1) direction. The structural parameters such as crystallite size, strain and dislocation density values are calculated as 32.98 nm, 1.193 × 10⁻³ lin⁻² m⁻⁴ and 9.55 × 10¹⁴ lin/m², respectively. Spectroscopic ellipsometric (SE) measurements were also presented for the prepared iodine doped ZnSe thin films. The optical band gap value of the deposited films was calculated as 2.681 eV by using the optical transmittance measurements and the results are discussed. In the electrical studies, the deposited films exhibit the VCNR conduction mechanism. The iodine doped ZnSe films show the non-linear I-V characteristics and switching phenomena.     

Deconvolution of temperature dependence of conductivity,its reduced activation energy,and Hall-effect data for analysing impurity conduction in n-ZnSe

ABSTRACT

The temperature dependence of the reduced activation energy w?=?ε/k_BT of the conductivity σ has been utilised for determining the impurity conduction mechanism in doped semiconductors in many studies. Herein, the formula for deconvoluting w when plural conduction mechanisms appear is used to confirm the analysis of the data of the Hall-effect measurements on Al-doped n-ZnSe samples. The analysis is performed on the basis of an impurity-Hubbard-band model which includes ε ₂ conduction in the top Hubbard band as well as ε ₃ and Efros-Shklovskii (ES) variable-range hopping (VRH) conduction processes in the bottom Hubbard band. As the result of the analysis, transitions among the three hopping conduction mechanisms of ε ₂, ε ₃, and ES VRH are clearly shown in the temperature dependence of w as well as in that of the Hall mobility, which are hardly noticed in the temperature dependence of σ. In addition, the power-law exponent of the prefactor of ES VRH conductivity is determined through the fit to the temperature dependence of w to show that it decreases from ～ 1.5 to ～ 0 with increasing net donor concentration.     

(ZnSe)_(12)在外电场下的基态性质和激发特性研究

以SBKJC为基组,采用密度泛函PBE0方法研究了不同外电场(0-0.030 a.u.)对(ZnSe)_(12)的基态几何结构、电荷分布、能量、电偶极矩、能隙、最小振动频率的影响;继而采用含时的TD-PBE0方法研究了(ZnSe)_(12)在外电场下的激发特性,并模拟了紫外-可见光谱.研究结果表明:外电场的加入导致分子对称性降低,当电场从0 a.u.变化到0.030 a.u.时,偶极矩逐渐增加,体系总能量、最小谐振频率和能隙一直减小.外电场对(ZnSe)_(12)的激发特性影响较大,随着电场的增加,紫外-可见光谱发生红移,同时对振子强度有很大影响,原来振子强度不为零的激发态变弱或成为禁阻跃迁,而原来振子强度很弱或禁阻的激发态变得很强.可以通过改变外电场来改变(ZnSe)_(12)的基态性质,以及控制(ZnSe)_(12)的吸收和发光特性.     

微乳液法制备不同形貌低维硒化锌纳米晶

利用微乳液法,实现了多晶硒化锌纳米空心球、单晶硒化锌纳米棒以及ZnSe量子点的低温合成.通过调整Triton X-100/环己烷/水体系中表面活性剂Triton X-100的浓度分别制备出直径在120 nm左右,壁厚在6nm左右的ZnSe多晶纳米空心球体、长度达1μm的单晶纳米棒和直径位于4～6nm的ZnSe量子点.紫外可见吸收光谱显示不同形貌ZnSe纳米结构的吸收特征具有较大的差别.     

New method to induce 2D–3D transition of strained CdSe/ZnSe layers

We present new growth conditions for growing high-quality CdSe/ZnSe quantum dots with photoluminescence emission measurable up to room temperature. The surface morphology is characterized in situ by Reflective High Energy Electron Diffraction (RHEED). The key point is the introduction of a new step in the growth process using amorphous selenium to induce a 2D–3D transition of a CdSe strained layer on ZnSe to form the dots. Optical characterizations by photoluminescence of CdSe/ZnSe quantum dots obtained that way, as well as X-ray diffraction results are also discussed here.     

Temperature dependent photoluminescence studies of ZnSe:I single crystals grown by chemical vapor transport

The single crystal ZnSe:I sample was grown by the chemical vapor transport (CVT) method using iodine as the transporting agent. The iodine incorporates itself effectively as a donor in the lattice. The sample shows a 〈111〉 optical quality surface and has an absorption edge at 2.55 eV due to a deep impurity band nearly 0.15eV below the conduction band. The photoluminescence emission spectra of this crystal have been measured for its temperature dependence as well as for excitation energy dependence. The photoluminescence is in accordance with a donor-acceptor complex formation involving iodine activated donors and self-activated acceptors. The configuration coordinate model has been used to explain the temperature dependent changes in the peak position and the bandwidth of the emission band. The decrease in luminescence efficiency with increasing temperature is explained by using a simple model for thermal quenching. The activation energy at low temperature range (T<200K) is different from that at high temperature range (200K<T<300K).     

N(2)O weak lines observed between 3900 and 4050 cm from long path absorption spectra

Previously unobserved nitrous oxide transitions around 2.5 μm are measured by intracavity laser absorption spectroscopy (ICLAS) analyzed by time-resolved Fourier transform (TRFT) spectrometer. With an accuracy of the order of 10⁻³ cm⁻¹, measured positions of 1637 assigned weak transitions are provided. They belong to 42 vibrational transitions, among which 33 are observed for the first time. These data are believed to be useful in particular to monitoring atmosphere purposes.     

ZnSe and copper-doped ZnSe nanocrystals (NCs): Optical absorbance and precise determination of energy band gap beside their exact optical transition type and Urbach energy

The using of a reliable and accurate new method (called in literature as derivation of absorption spectrum fitting (DASF)) for evaluation of the optical band gap (E_g) and also the exact nature of charge carriers optical transitions, is investigated in ZnSe and ZnSe:Cu nanocrystals (NCs) synthesized by rapid microwave irradiation. This method can be performed by using the output of UV–Visible spectroscopy. The obtained E_g values are within the range of 2.985–3.261 eV, depending to the microwave irradiation time and Cu dopant percentage (decreasing trend with increasing of irradiation time and Cu content). The DASF-based obtained results for ZnSe and ZnSe:Cu nanoparticles, showed the more precise values of band gap, with the same trend of previously qualitative reported data on the same samples. Also, the direct gap nature of their optical transitions was justified. To perform the method, there is no any need to the concentration of solutions and merely one need the direct absorption or transmission spectra. In other word, DASF technique was employed on ZnSe NCs to confirm its validity and to avoid non-precise reports on optical band gap which can affect on the device optimizations based on these samples. Moreover, using the values of E_g, refractive index and dielectric constant of each sample were obtained at the absorption edge. Also, the width of the tailing states in the gap (Urbach energy: E_Tail) was estimated and were within the range of 0.049–0.122 eV, which their very small values in compare with E_g imply to the sharp valence and conduction band edges; it means the good crystallinity nature of the produced samples.     

Implementation of Na diffusion layer at Cu2ZnSnSe4/Mo interface for flexible thin film solar cell fabricated on Ti foil by solid state selenization

A Cu₂ZnSnSe₄ (CZTSe) photovoltaic absorber thin films were prepared using a 2-step selenization process on a Ti substrate including a Na precursor layer and a Na-free Ti substrate, and the effect of Na on the solar cell performance was compared. A CZTSe flexible solar cell fabricated on a Ti foil substrate exhibited an efficiency of 3.06%, which was less than half that of a solar cell fabricated on a soda lime glass substrate. This was attributed to the absence of Na and severe Zn crowding near the back contact. By depositing a 100‐nm-thick sodalime glass thin film on a Ti substrate to supply Na, the efficiency increased up to 5.59%. In the Na-doped CZTSe absorber layer grown on the Ti substrate, the back crowding of Zn was eliminated and the upper part of the absorption layer was converted to a Zn-rich environment, which prevented the formation of Cu_Zn antisite defects.     

Influence of varying molar concentration on the properties of electrochemically-deposited zirconium-doped ZnSe thin films

The effects of molar concentration on ZnSe and Zr-doped ZnSe thin films were studied after successful synthesis by electrochemical technique. 0.1 M zinc tetraoxosulphate (VI) heptahydrate (ZnSO₄·7H₂O) and 0.1 M selenium powder respectively served as the cationic and anionic precursors while 0.1 mol% of zirconium oxidchlorid (ZrOCl₂·8H₂O) was used as the dopant. The morphology, structure, elemental, light response, and electrical features of the samples were studied. The films exhibited uniform distribution of spherical balls with crystalline peaks at (220), (221), (300), and (310) planes. The elemental composition of the film confirmed the deposition of as-synthesized elements. Improved optical characteristics and reduced band gap energies of the films from 2.4 eV to 2.0 eV were gotten upon the addition of zirconium. Electrical results showed increased material conductivity at increasing dopant percentages. The synthesized materials are potentially applied in optoelectronics and photovoltaics.