Si衬底上ZnSe外延膜的低压MOCVD生长

以硒化氢（H2Se）和二甲基锌为源材料，生长温度是300℃时，用低压金属有机化学气相沉积（LP－MOCVD）系统在Si(111)衬底上外延生长了ZnSe薄膜。通过X射线衍射（XRD）、扫描电子显微镜的能量色散（EDS）以及光致发光（PL）实验验证ZnSe外延膜的质量，在X射线衍射谱中只有一个强的ZnSe(111)面衍射峰，这说明外延膜是（111）取向的单晶薄膜，在能量色散谱中除了Si,Zn和Se原子外，没有观测到其他原子，说明ZnSe外延膜中杂质含量较少。ZnSe外延膜中Zn/Se原子比接近1，有较好的化学配比。在ZnSe外延膜的77K光致发光谱中没有观测到与深中心发射相关的发光峰，表明ZnSe外延膜的晶格缺陷密度较小。77K时的近带边发射峰447nm在室温时移至465nm附近。     

ZnSe/SiO2复合薄膜光学常数与荧光光谱的研究

采用溶胶-凝胶工艺与原位生长技术，制备了ZnSe/SiO₂复合薄膜.X射线衍射分 析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1 ∶1.01—1∶1.19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌，结果表明复合薄 膜表面既存在尺寸约为400nm的ZnSe晶粒，也存在尺寸小于100nm的ZnSe晶粒.利用椭偏仪测 量了薄膜椭偏角Ψ，Δ与波长λ的关系，采用Maxwell-Garnett有效介质理论对薄膜的光学 常数、厚度、气孔率、ZnS 关键词： 2复合薄膜')" href="#">ZnSe/SiO₂复合薄膜 光学性质 椭偏光度法 荧光光谱     

Preparation and characterization of high-specific-surface-area activated carbons from K2CO3-treated waste polyurethane

An activated carbon with high specific surface area was prepared from polyurethane foam by chemical activation with K2CO3 and the influences of carbonization temperature and impregnation ratio on the pore structure of the prepared activated carbon were investigated. It was found that the specific surface area of the activated carbon was at a maximum value (about 2800 m(2)/g) at a carbonization temperature of 1073 K and at an impregnation ratio of 1.0. It was concluded that the polyurethane foam structure was modified during impregnation by K2CO3, K2CO3 promoted charring during carbonization, and then the weight loss behavior was changed below 700 and above 1000 K, carbon in the char was consumed by K2CO3 reduction, and this led to the high specific surface area. The prepared activated carbon had a very sharp micropore size distribution, compared with the commercial activated carbon having high specific surface area. The amounts of three organic vapors (benzene, acetone, and octane) adsorbed on the prepared activated carbons was much larger than those on the traditional coconut shell AC and the same as those on the commercial activated carbon except for octane. We surmised that the high specific surface area was due to the modification of the carbonization behavior of polyurethane foam by K2CO3.     

Monocrystalline ZnSe as an ionising radiation detector operated over a wide temperature range

This work presents an analysis of the main requirements for semiconductor detectors of ionising radiation that can be operated over a wide temperature range. The analysis shows that wide-gap semiconductors with a band gap greater than 2.0 eV are a better option for effective detection of ionising radiation at high temperatures. The results of an experimental investigation into the luminescent, electrical and spectrometric properties of the wide-gap semiconductor ZnSe are shown as an example. Undoped monocrystalline ZnSe has an extremely low leakage current over a wide range of temperatures up to 167 °C and can be used as a radiometric X-ray detector in pulse-counting mode over a wide temperature range up to at least 130 °C.     

A Novel One‐Pot Synthesis of UV‐Blue ZnSe Nanocrystals in Aqueous Solution

Described herein is a novel one‐pot aqueous synthesis of ZnSe nanocrystals has featuring the utilization of Na₂SeO₃ and Zn(AC)₂×2H₂O as Se and Zn source, glutathione (GSH) as stabilizing agent and reducing agent. By this approach, the UV‐blue ZnSe QDs with quantum yield (QYs) up to 19% have been synthesized with a molar ratio of Se/Zn/GSH at 1:4:8.5 under aqueous conditions at 110 °C. XRD and TEM show the ZnSe QDs are zinc cubic structure particles with an average diameter of 3–5 nm.     

ZnSe纳米片晶的可控合成

以乙二胺四乙酸(EDTA)为稳定剂、丁胺(BA)为结构导向模板, 采用水热合成方法制备了尺寸和晶型可控的ZnSe纳米片晶; 利用XRD, TEM, SEM以及紫外-可见漫反射等手段对所得的产物进了表征, 结果表明, 通过改变水热温度和BA用量, 可以实现ZnSe纳米片晶的大小和物相的调控, 并初步分析了其形成过程.     

溶剂热法合成ZnSe纳米球

以乙酸锌和Se粉为原料,环己酮为溶剂,于180 ℃反应24 h制得黄色纳米球ZnSe,其结构和性能经XRD,SEM及TEM表征.     

ZnO-Si不同退火条件对生长ZnSe薄膜的影响

研究了作为缓冲层的ZnO薄膜在不同的退火时间、退火温度下退火对Si衬底上生长ZnSe膜质量的影响。当溅射有ZnO膜的Si(111)衬底的退火条件变化时，从X射线衍射谱（XRD）和光致发光谱（PL）中可见，ZnSe(111)膜的晶体质量有较大的变化。变温的PL谱表明，Si衬底上生长的具有ZnO缓冲层的ZnSe膜的近带边发射峰起源于自由激子发射。     

基于硒化锌薄膜法的食源性致病菌原位红外光谱检测

食源性致病菌是引发和威胁公众健康的主要因素之一。由于食源性致病菌种类繁多,常规检测方法复杂耗时要求高,因此迫切需要一种更加快速精确的致病菌检测技术。在传统红外光谱检测致病菌的流程中,如经典的溴化钾压片法,除了压片本身的操作之外通常还需对样品进行冷冻干燥（约需2 d）等耗时前处理过程,因而不利于高通量快速检测。本研究利用硒化锌薄膜法,在硒化锌窗片上直接滴加菌液、低温（48 ℃）烘干后进行原位检测,无需漫长的冻干处理,整个检测过程在50 min之内。同时,检测所需样品量少（10 μL）无需研磨等物理破坏性的制样过程,避免了常规溴化钾压片法中研磨颗粒粗细、制片厚薄误差及易碎片、吸潮等的不利影响。四种常见食源性致病菌（大肠杆菌DH5α;沙门氏菌CMCC 50041;霍乱弧菌SH04;金黄色葡萄球菌SH10）的硒化锌薄膜法与溴化钾压片法红外谱图对比分析表明：在相同的峰值检测阈值下（透过率大于0.05%）,本研究所采用的方法获得的二阶导数图谱在900～1 500 cm-1范围内可被识别的特征峰个数比溴化钾压片法明显增多（硒化锌薄膜法共计81个,溴化钾压片法共计58个）,特征峰在多个位置强度显著增加(1 119,1 085和915 cm-1等),且可将溴化钾压片法中较宽的单峰或不明显的双峰显示为较明显的双峰（大肠杆菌DH5α：1 441,1 391和1 219 cm-1等; 沙门氏菌CMCC 50041：1 490,1 219和1 025 cm-1;霍乱弧菌SH04：1 441和1 219 cm-1;金黄色葡萄球菌SH10：1 491,1 397和1 219 cm-1）,说明硒化锌薄膜法可以提高图谱分辨率及信噪比。基于硒化锌薄膜法的原位红外光谱法对常见食源性致病菌整体快速高通量检测将具有巨大的应用前景。     

Development and construction of rotating polarizer analyzer ellipsometer

A detailed mathematical derivation and an experimental characterization of one to two ratio rotating polarizer analyzer ellipsometer (RPAE) are presented. The alignment, calibration, and testing of reference samples are also discussed. The optical properties of some known materials obtained by the proposed ellipsometer will be shown and compared to accepted values. Moreover, the constructed ellipsometer will be tested using two ellipsometry standards with different thicknesses.