TiO2纳米晶的等离子体改性及光电转换性能的研究

用反应射频溅射法和涂敷法在导电玻璃上制备TiO2薄膜，并用Ar射频等离子体对TiO2薄膜进行处理。按“三明治”结构将TiO2工作电极、Pt／C对电极、0．5MKI 0．05M I2电解液组装成光电池，测量其开路电压和短路电流。结果表明经过Ar射频等离子处理后，溅射法和涂敷法制备的TiO2薄膜组装的光电池的光电流分别提高了约80％和60％。     

溶胶-凝胶法纳米ZnO薄膜的绿光发射

利用溶胶-凝胶法制备了纳米ZnO薄膜,室温下测量了样品的光致发光谱(PL)和X射线衍射谱(XRD),观测到中心波长在523 nm附近的绿色荧光发射,研究了纳米ZnO薄膜的绿光发射机制,证实了纳米ZnO薄膜绿光可见发射带来自氧空位(Vo)形成的浅施主能级和锌空位(Vzn)形成的浅受主能级之间的复合。     

Preparation and characterization of ZnO nanorods from NaOH solutions with assisted electrical field

ZnO naorods on ZnO-coated seed substrates were fabricated by solution chemical method from Zn(NO₃)₂/NaOH under assisted electrical field. The working mechanism of electrical field was analyzed and the factors affecting the rod growth such as potential, precursor concentration and growth temperature were elucidated. The structural and optical properties are characterized by SEM, TEM, XRD, HRTEM and UV-vis. The results indicated that the nanorods have wurtzite structure without electrical field and are primarily of zincite structure under electrical field; when the electrical field is 1.1-1.3 V, not only the elevation of ion diffusion and adsorption lower the crystallite/solution interfacial energy and then the crystal nucleation barrier by increasing charge intensity, but also the production of H⁺ through oxidation of OH⁻ increases properly the degree of solution supersaturation near the substrate, and thus lowers the activation energy. Both the two processes do favor to rod growth. With increasing precursor concentration in this system, the average diameter and length of ZnO nanorods increase, leading to decreasing of optical transmittance. The maximum rod growth rate at given concentration of Zn²⁺ occurs at a specific temperature.     

薄膜法布里-珀罗滤光片中的超棱镜效应

基于薄膜法布里珀罗滤光片在其峰值波长处具有较大群延迟的特性,设计并从实验上验证了光束倾斜入射时这种结构中存在的超棱镜效应。根据光学薄膜理论中的特征矩阵法,数值模拟计算了器件的群延迟和空间色散曲线,镀制并对器件进行了测试。测试结果表明器件在透射峰值波长处因超棱镜效应引起的空间色散最大位移值达到65μm,与理论计算结果非常吻合;相对于传统的光栅和棱镜器件而言器件具有更高的空间角度色散,实际测试在784.5 nm至786.5 nm波长范围内器件的角色散达到30°/nm。     

Small-scale fracture toughness of ceramic thin films: the effects of specimen geometry,ion beam notching and high temperature on chromium nitride toughness evaluation

For the implementation of thin ceramic hard coatings into intensive application environments, the fracture toughness is a particularly important material design parameter. Characterisation of the fracture toughness of small-scale specimens has been a topic of great debate, due to size effects, plasticity, residual stress effects and the influence of ion penetration from the sample fabrication process. In this work, several different small-scale fracture toughness geometries (single-beam cantilever, double-beam cantilever and micro-pillar splitting) were compared, fabricated from a thin physical vapour-deposited ceramic film using a focused ion beam source, and then the effect of the gallium-milled notch on mode I toughness quantification investigated. It was found that notching using a focused gallium source influences small-scale toughness measurements and can lead to an overestimation of the fracture toughness values for chromium nitride (CrN) thin films. The effects of gallium ion irradiation were further studied by performing the first small-scale high-temperature toughness measurements within the scanning electron microscope, with the consequence that annealing at high temperatures allows for diffusion of the gallium to grain boundaries promoting embrittlement in small-scale CrN samples. This work highlights the sensitivity of some materials to gallium ion penetration effects, and the profound effect that it can have on fracture toughness evaluation.     

ZnO晶体的偏振拉曼散射的深入研究

利用拉曼选择定则,设计了ZnO单晶的直角偏振几何配置。在室温下测量了ZnO单晶的各种振动模式的偏振拉曼散射光谱。与原先的文献相比较,初步讨论了各种振动模式的线宽和强度的变化原因。除ZnO晶体中包括非极性和极性拉曼基频振动,准横光学和准纵光学模式和振动属性被指认外,它们的高阶拉曼散射模式首先被确定。本研究结果为深入了解ZnO晶体和薄膜的宏观性质和微观结构提供了依据。     

薄油层SAGD开发蒸汽腔发育和生产指标预测

通过分析现场生产数据和数值模拟结果,将薄层稠油油藏蒸汽辅助重力驱油(SAGD)生产中蒸汽腔发育分为横向扩展和向下运移两个过程,并进行简化处理预测SAGD生产指标.联合质量守恒方程、能量守恒方程和周围地层散热模型得到一个描述蒸汽腔发育的综合表达式,该方程属于典型的第二类Volterra积分函数.通过拉普拉斯变换对Volterra积分函数进行半解析求解,最终得到不同时刻蒸汽腔发育状态.为验证模型的正确性,将模型的计算结果与CMG Stars的计算结果对比,整体误差小于5%.新模型可以方便简单地预测SAGD生产中蒸汽腔发育过程和生产动态指标,从而确定SAGD生产的极限油藏参数和合理的注采参数.     

Highly stable amorphous indium‐zinc‐oxide thin‐film transistors with back‐channel wet‐etch process

The stabilities of amorphous indium‐zinc‐oxide (IZO) thin film transistors (TFTs) with back‐channel‐etch (BCE) structure are investigated. A molybdenum (Mo) source/drain electrode was deposited on an IZO layer and patterned by hydrogen peroxide (H₂O₂)‐based etchants. Then, after etching the Mo layer, SF₆ plasma with direct plasma mode was employed and optimized to improve the bias stress stability. Scanning electron microscopy and X‐ray photoelectron spectroscopic analysis revealed that the etching residues were removed efficiently by the plasma treatment. The modified BCE‐ TFTs showed only threshold voltage shifts of 0.25 V and –0.20 V under positive/negative bias thermal stress (P/NBTS, V_GS = ±30 V, V_DS = 0 V and T = 60 °C) after 12 hours, respectively. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High‐mobility solution‐processed zinc oxide thin films on silicon nitride

A high effective electron mobility of 33 cm² V^–1 s^–1 was achieved in solution‐processed undoped zinc oxide (ZnO) thin films. The introduction of silicon nitride (Si₃N₄) as growth substrate resulted in a mobility improvement by a factor of 2.5 with respect to the commonly used silicon oxide (SiO₂). The solution‐processed ZnO thin films grown on Si₃N₄, prepared by low‐pressure chemical vapor deposition, revealed bigger grain sizes, lower strain and better crystalline quality in comparison to the films grown on thermal SiO₂. These results show that the nucleation and growth mechanisms of solution‐processed films are substrate dependent and affect the final film structure accordingly. The substantial difference in electron mobilities suggests that, in addition to the grain morphology and crystalline structure effects, defect chemistry is a contributing factor that also depends on the particular substrate. In this respect, interface trap densities measured in high‐κ HfO₂/ZnO MOSCAPs were about ten times lower in those fabricated on Si₃N₄ substrates. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

     

Ga掺杂对ZnO纳米结构可见光发射的抑制效应

采用碳热还原反应和原位掺杂的方法制备了不同Ga掺杂浓度的ZnO纳米结构. X射线衍射 显示掺杂纳米结构中为单一的氧化锌纤锌矿结构. 扫描电子显微镜 观测发现随掺杂浓度的增大, 纳米结构的形貌逐渐从纳米六棱柱变为纳米锥.光致发光 和X射线光电子能谱 测量分别发现随着掺杂浓度升高, 纳米结构的可见发光强度和其中空位 氧峰相对强度逐渐减小直至消失, 两者存在很强的相关性. 上述结果为ZnO可见光发射的氧空位机理提供了新的实验证据. 对Ga掺杂抑制纳米结构中氧空位的原因进行了分析.