Optical Multistability and Wavelength Switching of a Fabry-Perot Semiconductor Laser with Multi-Detuned Light Injections

Optical multistability of a Fabry-Perot semiconductor laser is analyzed when multi-optical inputs detuned from the cavity-resonant wavelength of a semiconductor laser are injected. Many split branches are shown to be produced in the optical output versus optical input characteristics for different detuned optical inputs. It is also shown that optical outputs can be switched in any one of the optical input wavelengths by optical input pulses, based on the optical output versus input characteristics with multi-split branches.     

半磁半导体Zn1-xMnxS中的能量传递

本文测量了Zn1-xMnxS在不同Mn浓度(0.001x=0.062,T=80K时的Zn1-xMnxS的发射谱及其衰减曲线,得到两个衰减寿命:τ1=70μs,τ2>1000μs,这表明在高Mn浓度时存在着两个弛豫过程:一个是较快的,另一个则是较慢的,根据Goede等人的实验结果可以断定较慢的过程来自孤立的Mn2-离子,那么便可以判知较快的过程是来源于Mn2-离子对.正是高Mn浓度下的Zn1-xMnxS中存在着Mn2+-Mn2+离子对,在其间有能量迁移以及它和能量受主之间的能量传递造成了该体系中的IR发射.     

光纤环形外腔半导体激光器频偏特性研究

本文给出了在环形光纤外腔光反馈之下半导体激光器频偏特性的小信号分析理论.分析表明,尤其在千兆赫以下的调制频段中,耦合腔相移、内外腔光耦合强度及内外腔光场相位失谐对频偏功率比均有显著影响.可望用作强度调制直接检测高速率、长距离光纤通信系统中的光源.     

GaMnN材料红外光谱中洛伦兹振子模型的遗传算法研究

利用红外反射光谱研究了蓝宝石衬底上用金属有机物化学气相淀积方法生长的稀磁半导体GaMnN材料的晶格振动特性. 并成功地将改进的遗传算法应用于其红外反射光谱洛伦兹振子模型参数的提取. 通过与GaN薄膜的洛伦兹振子模型参数的对比研究发现,GaN掺入Mn后,ω_TO向高频方向移动,γ,ε_∞和ε_s均增加,而ω_LO基本保持不变. 文中同时分析和讨论了Mn对晶格振动特性的影响及 关键词： 稀磁半导体GaMnN材料 遗传算法 洛伦兹振子模型 参数提取     

半导体断路开关输出脉冲宽度的参数影响规律

采用Silvaco TCAD软件,对P+-P-N-N+SOS结构输出脉冲宽度的参数影响规律进行了一维数值模拟研究,包括N+区扩散深度、有效横截面积、外电路参数等。模拟结果表明:随着N+区扩散深度、有效横截面积的增加和外电路电阻的增大,输出脉冲的宽度减小。通过参数优化,获得了脉宽约为4 ns的输出脉冲。     

基于半导体光放大器中非线性偏振旋转效应单一光缓存环全光时隙交换处理能力研究

对基于半导体光放大器(SOA)中非线性偏振旋转效应(NPR)效应的单一光缓存环多数据包的全光时隙交换(TSI)处理能力进行了理论和实验研究,在使用归纳法导出单一缓存环实现多数据包全光时隙(TSI)必要条件的基础上,针对各种全光TSI操作要求得出了相应光数据包的调度方案,在实验上,以基于SOA中NPR效应的单一光缓存环实验系统,开展了多数据包全光TSI操作的实验研究,根据上述光数据包理论调度方案进行相应系统参数设定,进行了速率为10 Gb/s的3个和4个数据包的全光TSI实验,实验结果与理论预期相符合,研究成果为减少昂贵SOA元件的用量、简化基于光缓存环全光TSI系统的结构提供了可靠依据,对推进全光TSI技术的发展具有重要意义。     

Improving Cu2ZnSnS4 (CZTS) solar cell performance by an ultrathin ZnO intermediate layer between CZTS absorber and Mo back contact

The effects of an ultrathin ZnO intermediate layer deposited at the CZTS/Mo interface on CZTS solar cell performance have been investigated in this work. The ZnO layer inhibits the generation of MoS₂ layer and the formation of voids in the CZTS absorber. Consequently, the incorporation of this layer reduces the series resistance and increases the shunt resistance, which boosts photovoltaic conversion efficiency from 1.13% to 4.3%. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

High mobility In2O3:H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization

The preparation of high‐quality In₂O₃:H, as transparent conductive oxide (TCO), is demonstrated at low temperatures. Amorphous In₂O₃:H films were deposited by atomic layer deposition at 100 °C, after which they underwent solid phase crystallization by a short anneal at 200 °C. TEM analysis has shown that this approach can yield films with a lateral grain size of a few hundred nm, resulting in electron mobility values as high as 138 cm²/V s at a device‐relevant carrier density of 1.8 × 10²⁰ cm^–3. Due to the extremely high electron mobility, the crystallized films simultaneously exhibit a very low resistivity (0.27 mΩ cm) and a negligible free carrier absorption. In conjunction with the low temperature processing, this renders these films ideal candidates for front TCO layers in for example silicon heterojunction solar cells and other sensitive optoelectronic applications. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Electromagnetic waves reflection,transmission and absorption by graphene–magnetic semiconductor–graphene sandwich-structure in magnetic field: Faraday geometry

Electrodynamic properties of the graphene–magnetic semiconductor–graphene sandwich-structure have been investigated theoretically with taking into account the dissipation processes. Influence of graphene layers on electromagnetic waves propagation in graphene–semi-infinte magnetic semiconductor and graphene–magnetic semiconductor–graphene sandwich-structure has been analyzed. Frequency and field dependences of the reflectance, transmittance and absorbtance of electromagnetic waves by such structure have been calculated. The size effects associated with the thickness of the structure have been analyzed. The possibility of efficient control of electrodynamic properties of graphene–magnetic semiconductor–graphene sandwich-structure by an external magnetic field has been shown.     

La1/8Ca7/8MnO3/Sr0.95Nb0.05TiO3异质结的整流特性和磁输运性质

在5%Nb掺杂的SrTiO3衬底上用磁控溅射法外延生长了La1/aCa7/aMnO3薄膜形成异质结,该异质结有类似于传统P-n结的整流特性.磁场下扩散电压减小,当温度低于130 K以下,扩散电压的减小非常明显.这和在此温度以下,La1/8Ca7/aMnO3出现自旋倾斜态密切相关.我们计算出异质结的结电阻和磁致电阻(MR),在不同大小的正负偏压,不同磁场下,都得到负的MR值.我们给出界面附近的La1/8Ca7/8MnO3的能带结构并分析了外加磁场对洪德耦合,Jahn-Teller畸变等机制的作用,来解释该异质结的磁输运行为.结果有助于了解高Ca掺杂锰氧化物异质结的性质.