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141.
H. Yamaguchi K. Kanisawa S. Miyashita Y. Hirayama 《Physica E: Low-dimensional Systems and Nanostructures》2004,23(3-4):285
We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (1 1 1)A substrates by molecular beam epitaxy. In contrast to conventionally used (0 0 1) surfaces, where Stranski–Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system. 相似文献
142.
Hyun Chul Choi Min Kyu Lee Hyun Joon Shin Seung Bin Kim 《Journal of Electron Spectroscopy and Related Phenomena》2003,130(1-3):85-96
To investigate the formation of a solid electrolyte interface (SEI) on the Li1+xV3O8 electrode surface in the thermodynamic stability range of the organic electrolyte, we applied scanning photoelectron microscopy (SPEM) to a pristine electrode and to an electrode after ten cycles. The F K-edge absorption spectrum of the cycled electrode showed that LiF forms on the electrode surface during the lithium insertion–extraction process in the Li1+xV3O8/Li cell. The photoelectron spectrum for the cycled electrode showed intense spectral features corresponding to Li 1s, F 2s, F 2p, and P 2p electron signals, whereas these spectral features were of negligible intensity for the pristine electrode. The above results give strong support for the formation of an SEI that consists of LiF and compounds containing phosphorus during operation of the battery. The SPEM images also revealed that the fluorine distribution on the surface of the cycled electrode was inhomogeneous. 相似文献
143.
杨青 《高等学校计算数学学报(英文版)》2003,12(2)
The mathematical model of semiconductor devices is described by the initial boundary value problem of a system of three nonlinear partial differential equations. One equation in elliptic form is for the electrostatic potential; two equations of convection-dominated diffusion type are for the electron and hole concentrations. Finite volume element procedure are put forward for the electrostatic potential, while upwind 相似文献
144.
Formation of p-type ZnO film on InP substrate by phosphor doping 总被引:3,自引:0,他引:3
Kyu-Hyun Bang Deuk-Kyu Hwang Min-Chul Park Young-Don Ko Ilgu Yun Jae-Min Myoung 《Applied Surface Science》2003,210(3-4):177-182
ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn3P2 was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn3P2 diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices. 相似文献
145.
146.
Tetraalkyltin complexes, SnR4 (R = Me, Et, Pr, Bu) could react with Pt/HY at 193, 243, 273 and 333 K, respectively. The reactions occurred on the surface of the zeolite and the organotin grafted zeolites were characterized in detail. The framework and the microporous structure of the grafted Pt/HY zeolites were retained. However, the modified zeolites showed better size selectivity in the absorption of hydrocarbons. 相似文献
147.
ZHOU Ming-Xiua② YANG Chuna DENG Xiao-Yana YU Wei-Feib LI Jin-Shanb a 《结构化学》2006,25(6):647-652
1 INTRODUCTION Silicon and its alloy have been widely applied in such fields as electronic industry, high-temperature structural ceramics, etc. In addition, the researches on silicon and its relevant materials greatly promote the rapid development of modern optics and infor- mation technology. Therefore, more and more at- tention is focused on the structure of silicon, oxide of silicon and the interfaces between silicon and metal or nonmetal. As an ideal passive film on the Si surface, S… 相似文献
148.
Dinesh Topwal U. Manju Sugata Ray S. Raj D. D. Sarma S. R. Krishnakumar M. Bertolo S. La Rosa G. Cautero 《Journal of Chemical Sciences》2006,118(1):87-92
Disordered Sr2FeMoO6 shows a drastic reduction in saturation magnetization compared to highly ordered samples, moreover magnetization as a function
of the temperature for different disordered samples shows qualitatively different behaviours. We investigate the origin of
such diversity by performing spatially resolved photoemission spectroscopy on various disordered samples. Our results establish
that extensive electronic inhomogeneity, arising most probably from an underlying chemical inhomogeneity in disordered samples, is
responsible for the observed magnetic inhomogeneity. It is further pointed out that these inhomogeneities are connected with
composition fluctuations of the type Sr2Fe1+x
Mo1-x
O6 with Fe-rich (x > 0) and Mo-rich (x < 0) regions.
Dedicated to Prof J Gopalakrishnan on his 62nd birthday. 相似文献
149.
Homogeneously prepared tosylcelluloses (TC) with degrees of substitution (DS) of DSTos 0.1–1.8 were used as intermediates for the synthesis of methylaminocelluloses (MAC) by nucleophilic substitution with methylamine. TC with DSTos up to 1.1 were shown to be valuable intermediates for selective synthesis of MAC with DSMA varying from 0.1 to approximately 1. No nucleophilic substitution was observed at higher DSTos. At the chosen reaction conditions (60 °C, 48 h) residual tosyl moieties remained unchanged and little hydrolysis took place. The samples obtained were characterized by means of elemental analysis, FTIR and 13C CP/MAS NMR spectroscopy. 13C CP/MAS NMR spectroscopy was found to be an efficient tool for quantification of DSMA. Furthermore, the swelling behaviour in water was investigated and preliminary tests concerning the bilirubin adsorption capacity of MAC were carried out. 相似文献
150.
本文用准平衡模型分析讨论了线性电压扫描下MIS器件的I/V瞬态.文中除了给出一般的处理方法以外,还给出了几种不同电压扫描率下I/Y特性的计算结果,并与已往的模型作了比较. 相似文献