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811.
812.
813.
814.
The Fermi and Coulomb holes of the 21
S state of the helium isoelectronic sequence are investigated. Several interesting differences between the results obtained and those which might be expected on the basis of the corresponding 23
S state are pointed out and discussed. 相似文献
815.
816.
The addition of the macrocyclic polyether 18-Crown-6 (18C6) increases the selectivity of oxidation of ethylbenzene to -phenylethylhydroperoxide (PEH) in the presence of Ni(acac)2. The initial oxidation rate, selectivity and degree of conversion of ethylbenzene to PEH are greater than those catalyzed by Ni(acac)2 only. The efficiency of the macrocyclic ligand as an activator of Ni(acac)2 exceeds that of monodentate donor ligands. The high selectivity of the process is due to both the primary Ni(acac)2 · 18C6 complexes and the products of their transformation in the course of oxidation. The mechanism of ethylbenzene oxidation catalyzed by Ni(acac)2 · 18C6 complexes is discussed.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 8, pp. 1406–1411, August, 1994. 相似文献
817.
A. V. Belyakov A. V. Golubinskii L. V. Vilkov V. I. Shiryaev E. M. Styopina E. A. Kovalyova V. S. Nikitin 《Russian Chemical Bulletin》1993,42(2):346-349
The molecular structure of gaseous Br2Sn(CH2SiMe2)2O was studied by electron diffraction. The six-membered ring has a chair conformation whereas the entire molecule possessesC
s
symmetry. The existence of a boat conformer cannot be completely excluded. The results of theoretical calculations for a twisted-boat conformation are at variance with the experimental data. Steric strain caused by mutual repulsion of the two axial methyl groups is reduced to the tilt of the Me2Si fragments in opposite directions. This results in an increase (up to 26°C) in the angle formed by the bisector of the CM-Si-CM angle with the CcSiO plane. The main geometrical parameters are as follows:r
g (Å): Si-O 1.708(20); Si-CM 1.862(20); Si-Cc 1.882(9); Sn-C 2.108(26); Sn-Br 2.456(3); C-H 1.099(30); (degr.): C-Sn-C 105(2); Br-Sn-Br 107.9(1.2); Si-O-Si 129.6(3); CM-Si-CM 112; Si-C-H 113 (fixed value in accordance with experiment); Cc-Si-O 107(2); Sn-C-Si 109(2); torsion angles: (Si-C) 52(2); (Si-O) 62(1); (Cc-Sn) 54(1). The average amplitudes were fixed at the values calculated from the force field. Structural parameters of molecules with similar structures were analyzed and compared.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 2, pp. 384–387, February, 1993. 相似文献
818.
M. M. Krayushkin M. A. Kalik L. G. Vorontsova E. Yu. Zvezdina M. G. Kurella 《Russian Chemical Bulletin》1993,42(7):1204-1208
9-Methyl-3,3a,4,5-tetrahydro-6H-thieno[2,3-b]thiocino[4,5-c]isoxazole and 9-hydroxyimino-2-methyl-7-methylene-6, 7,8,9-tetrahydro-5H-thieno[2,3-b]thiocine have been prepared for the first time by the oxidation of 2--alkenylthio-3-thiophenecarbaldoximes with NaOCl. X-ray structural investigations of thieno[2,3-b]thiocine and 2-homomethallylthio-5-methyl-3-thiophenecarbaldoxime have been carried out.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 7, pp. 1262–1266, July, 1993. 相似文献
819.
M. F. Budyka G. V. Zakharova O. D. Laukhina M. V. Alfimov 《Russian Chemical Bulletin》1992,41(9):1589-1596
The reaction of the photochemical synthesis of 2,7-dimethylacridine from di(para-tolyl)amine and bromoform was studied utilizing the method of microsecond impulse photolysis. The proposed new scheme for the formation of acridine assumes the recombination of the primary alkyl radicals at the nitrogen atom of the cation radical and/or the radical of the amine as the main route of the reaction. The data obtained indicate the common character of the nature of some intermediate stages and the structures of the intermediates in the photochemical formation of acridine compounds and triphenylmethane dyes from aromatic amines and halogenomethanes.Institute of Chemical Physics, Chernogolovka, Russian Academy of Sciences, 142432 Chernogolovka. Translated from Izvestiya Akademii Nauk, Seriya Khimicheskaya, No. 9, pp. 2044–2052, September, 1992. 相似文献
820.
The effect of pressure during thermal plasma chemical vapor deposition of diamond films has been investigated for a pressure range from 100 to 760 Torr. The maximum growth rate in our experiments occurs at 270 Torr for substrate temperatures around 1000°C. The existence of an optimum pressure for diamond deposition may he related to the balance between generation and recombination of atomic hydrogen and carbon-containing active species in front of the substrate. To estimate the concentrations of atomic hydrogen and methyl radicals under thermal plasma conditions, calculations based on thermodynamic equilibrium have been performed. This approximate evaluation provides useful guidelines because rapid diffusion results in a near frozen chemistry within the boundary layer. The effect of substrate pretreatment on diamond deposition depends on the type of substrate used. Two growth modes have been observed-layer growth and island growth of diamond crystals on various substrates. Screw dislocations have been observed in diamond deposition in thermal plasmas, and defects such as secondary nucleations are more concentrated along (III) directions than along (100) directions. 相似文献