Xe8+离子双电子复合速率系数的理论研究

利用基于全相对论组态相互作用理论的FAC程序包, 详细研究了温度在0.1~1650 eV范围内Xe8+离子的双电子复合(DR)过程。 通过比较4s, 4p和4d壳层电子激发的双电子复合速率系数, 发现温度在10 eV以上时, 内壳层4p电子激发的双电子复合速率数对总双电子复合速率系数有很重要的贡献, 而4s电子激发对总双电子复合速率数贡献小于7.5%。 给出了△n=0, 1和2 三类芯激发对总双电子复合速率系数的贡献以及自由电子俘获到不同主量子数的双电子复合速率系数, 发现△n=2的芯激发和n′＞15的DR速率系数对总DR速率系数的贡献也很重要。 进一步给出了△n=0, 1和2 三类芯激发和总DR速率系数的拟合参数, 拟合结果和计算值符合, 偏差小于1%。 通过对双电子复合、 辐射复合以及三体复合速率系数的比较得知, 在温度高于1 eV时, DR过程是Xe8+离子的主要复合过程。Based on the fully relativistic configuration interaction method, theoretical calculations are carried out for the dielectronic recombination (DR) rate coefficients of Xe8+ ions in the temperature region from 0.1 to 1 650 eV. The comparison of the DR rate coefficients from 4s, 4p and 4d subshell excitations shows that 4d subshell excitation dominates in the whole temperature region. The contribution from 4p subshell excitation is very important at temperature above 10 eV and the contributions from 4s subshell excitation is lower than 7.5% in the whole temperature region. Similarly, the comparison of the DR rate coefficients through △n=0, 1 and 2 core excitation shows that the contribution from △n=2 core excitation can not be neglected, the contributions from n′＞15 can also not be neglected. The DR rate coefficients of △n=0, 1 and 2 core excitation and the total DR rate coefficients are fitted with some parameters, which are in good agreement with theoretical calculations values (within 1% difference). The total DR rate coefficients are greater than radiative recombination (RR) and three body recombination (TBR) rate coefficients at temperature above 1 eV. Therefore, the DR process can strongly influence the ionization balance of laser produced xenon plasmas.     

MCM-41分子筛的合成及129Xe核磁共振的研究

Purely siliceous MCM-41 with a narrow pore-size distribution, different pore size, high surface area was synthesized . As prepared, calcined and catalytically tested MCM-41 materials have been comprehensively characterized by N₂ adsorption/desorption at 77K and ¹²⁹Xe NMR. By adding mesitylene during the synthesis, the pore size of MCM-41 was enlarged to 5.2nm. The chemical shift in ¹²⁹Xe NMR spectroscopy of adsorbed xenon indicates that the MCM-41 is one dimensional pore channels .     

反应堆核泵浦激光He-Ar-Xe体系泵浦效率理论研究

 系统地提出了He-Ar-Xe核泵浦激光泵浦效率的理论模型,推导了泵浦效率公式。研究了激光泵浦效率与泵浦腔内气体总压力, He和Ar分压,Xe的含量之间的函数关系。并用前人的实验结果定性地对模型进行了验证,拟合了泵浦效率函数参数,探讨了各参数之间的关系及其对泵浦效率的影响,为进一步的实验设计提供了理论依据。     

Tailoring Pore Structure and Morphologies in Covalent Organic Frameworks for Xe/Kr Capture and Separation

As a rising star among porous solid materials, covalent organic frameworks(COFs) with excellent properties including but not limit to facilely controllable structure, high porosity, and multi-chemical functionality represent significant potential for efficient ¹²⁷Xe/⁸⁵Kr capture and separation. In this study, through tuning the length of the organic ligands, two-dimensional(2D) COF mate-rials with identical connection group but different pore properties, denoted as ATFG-COF and TpPa-COF with AA-stacking model and TpBD-COF with AB-stacking model were synthesized and tested for Kr and Xe adsorption for the first time. Adsorption measurements indicate that the narrower pore apertures and higher porosity are conducive for COF materials to capture Xe and Kr. Furthermore, the Henry's constant, isosteric heat of adsorption(Q_st), and ideal adsorbed solution theory(IAST) selectivity of ATFG-COF, the pore size of which is closest to the kinetic diameter of the Xe atom(0.41 nm) among 2D COF materials, were carried out based on the single component sorption isotherms. The results illustrate that the high isosteric heat values of Xe/Kr adsorption on ATFG-COF are 25 and 16 kJ/mol at room temperature, respectively. Henry's law predicts that the selectivity factor of Xe to Kr is 6.07, consistent with the adsorption selectivity(ca. 6) calculated based on the IAST.     

Double even tempering of orbital exponents: Application to Roothaan-Hartree-Fock calculations for He through Xe in Slater-type basis sets

Summary Double even tempering (DET) of orbital exponents is proposed as a useful generalization of even tempering (ET). The DET scheme uses two sets of basis functions for each angular momentum. The two sets have different principal quantum numbers and their exponents are generated by two different geometric sequences. Roothaan-Hartree-Fock (RHF) calculations on the atoms from He through Xe using both ET and DET Slater-type basis sets of the same size are carried out to demonstrate the substantial improvement offered by the DET scheme. The DET scheme reduces the maximum deviation of the RHF energies relative to the Hartree-Fock limit from 1.4 to 0.3 millihartrees.     

超极化129Xe自动收集-升华装置研究

因其较高的核自旋极化度所提供的探测灵敏度，超极化¹²⁹Xe气体已被成功应用于动物和人体磁共振成像（MRI）.但是，在超极化¹²⁹Xe的收集-升华过程中，多种因素会导致¹²⁹Xe核自旋弛豫，进而限制其应用范围.本文通过理论模型分析和实验测量，验证了温度、磁场、螺旋冷阱材质等对冷冻恢复过程中超极化¹²⁹Xe弛豫的影响；同时，测量了自动收集-升华装置的稳定性.研究结果表明，升华方式和冷阱材质对¹²⁹Xe极化度损耗的影响显著；自制收集-升华装置的自动化程度高、长时间稳定，¹²⁹Xe极化度的恢复率可达到85.6% ± 4.7%.本研究非常有助于提升超极化¹²⁹Xe在动物和人体MRI中的使用效率.     

The dependence on temperature and concentration of 129Xe NMR chemical shift values of organoxenon(II) salts [RXe][Y] and of the parent molecule XeF2

The dependence of the 129Xe NMR chemical shift value of XeF2 on temperature and concentration was determined in a variety of prototypic media: in acidic (anhydrous HF, aHF), nonprotic but polar (dichloromethane), and basic (CD3CN-EtCN, 1:3 v/v) solvents. The 129Xe NMR spectra of a representative series of organoxenon(II) salts [RXe][Y] (R = C6F5, heptafluoro-1,4-cyclohexadien-1-yl (cyclo-1,4-C6F7), pentafluoro-1,4-cyclohexadien-3-on-1-yl (cyclo-3-O-1,4-C6F5), CF2=C(CF3), (CF3)2CFC[triple bond]C, C4H9C[triple bond]C; Y = BF4, AsF6) in aHF showed, compared with XeF2-aHF, a quantitatively less distinct but qualitatively related dependence of delta(129Xe) vs temperature. The dependence of their delta(129Xe) values on concentration in aHF is negligible. An explanation for the different behavior of [RXe][Y] and XeF2 is offered.     

Nanoheterogeneity in PEO/PMMA blends probed by 129Xe-NMR

Xenon has been used as a structural probe of solid poly(ethylene oxide)/atactic poly(methyl methacrylate) (PEO/PMMA) blends of concentrations 10/90 to 75/25. ¹²⁹Xe-NMR spectra at 293 K show significant changes in line width and chemical shift as the blend composition is varied. The ¹²⁹Xe spectra are interpreted in terms of exchange between amorphous single-phase PEO and PMMA domains. It is shown that a simple two-site exchange model can be used to calculate spectra which fit the experimental data over the whole concentration range. Xe exchange between blend subregions is demonstrated also by a two-dimensional NMR experiment. The PEO/PMMA results are compared to previously published poly(vinylidene fluoride)/PMMA ¹²⁹Xe spectra. © 1997 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 35: 2681–2688, 1997     

激光极化129Xe核自旋弛豫率的测量

由弱磁场下光泵自旋交换、强磁场中核磁共振测量方法,获得激光极化低压同位素¹²⁹Xe气体的核自旋弛豫率1/T₁及其与N₂气压力、环境温度的关系.结果表明:在291K的室温下,对于0~11 333.05Pa的N₂气压力范围,1/T₁随着N₂气压力的增加而增大;N₂气压力为1 466.63Pa时,1/T₁随着样品温度从234K到292K增高而减小     

高能Xe离子辐照引起的注碳a:SiO2中新结构的形成

先用120keV的碳离子注入非晶二氧化硅a:SiO2薄膜，再用能量为1754MeV的Xe离子辐照。注碳量为5．0×10^16—8．6×10^17ion／cm^2，Xe离子辐照剂量为1．0×10^11和5．0×10^11ion／cm^2。辐照后的样品中形成的新结构用显微傅立叶变换红外光谱仪进行测试分析。结果表明，Xe离子辐照引起了注碳a:SiO2中Si—C，C—C，Si—O—C键以及CO和CO2分子的形成与演化。在注碳量较高时，Xe离子辐照在样品中产生了大量的Si—C键。与注入未辐照和辐照的低注碳量样品比较，增强的Si—C键的形成，预示着辐照可引起注碳a:SiO2样品中的SiC结构相变。Amorphous silicon-dioxide （a:SiO2） films were firstly implanted at room temperature （RT） with 120 keV C-ions to doses ranging from 5.0 × 10^16 to 8.6 × 10^17 ion/cm^2, and then the C-doped a:SiO2 films were irradiated at RT with 1 754 MeV Xe ions to 1.0 × 10^11 and 5.0 × 10^11 ion/cm^2, respectively. The information of new tex- ture formation in the C-doped SiO2 films after high-energy Xe ion irradiation was investigated using micro-FTIR measurements. The obtained results showed that Si--C, C--C, Si--O--C bonds as well as CO and CO2 molecules were formed in the C-doped a-SiO2 films after Xe ion irradiation. Furthermore, Xe-ion irradiation induced a plenteous formation of Si--C bonds in the high dose C-ion implanted a:SiO2 films. Compared with the C-implanted sampies without Xe-ion irradiation and the low dose C-implanted samples with Xe-ion irraddiation, the enhanced and plenty of Si--C bond formation implied that the phase of SiC structures may be produced by Xe-ion irradiation in the high dose C-ion implanted a:SiO2 films.