“阳”加速器钼丝X-pinch初步实验研究

 在“阳”加速器上进行了直径分别为10, 15, 20 μm, 交叉角为32°,45°,60°的钼（Mo）丝X-pinch实验。“阳”加速器产生的电流峰值约520 kA，上升时间80 ns。实验中通过X射线功率谱仪和纳秒分幅相机等仪器对Mo丝X-pinch辐射特性进行了诊断。实验表明：Mo丝X-pinch过程中会出现多次X射线爆发，箍缩过程中产生的热点辐射出能量超过3 keV的X射线，探测到的最小热点直径小于30 μm。     

Synthesis and Properties of a Heteronuclear Ag（Ⅰ）/Ni（Ⅱ） Complex

Introduction Itiswell knownthatcyanogroupsincyanometa latessuchas[Ag(CN)2]-unitscanbeusedasbridg ingligandsandapolymericstructurecanbeformed throughsilver silver(argentophilic)interactions.This propertyhasbeenexploredintheconstructionofmany oligomericandp…     

X光底片在位相对标定

本文描述了X光底片在位相对标定技术。其原理是使X射线谱经阶梯形吸收滤片透射后,对X光底片曝光,测量底片的曝光量。文中给出了标定方法和数据处理方法,而且也给出了在X光激光实验中得到的Kodak AA5底片的特性曲线。     

类锂离子与软X射线激光研究有关的跃迁波长和振子强度

本文用多组态HXR自洽场方法和优化以Slater径向积分法相结计算了类锂离子(Z=13～17,19)1s~2nl~2LJ(2≤n≤5,0≤l≤4)能级之间的跃迁波长和振子强度,并和实验进行了比较。就软X射线激光跃迁4f—3d而言,本文计算的波长值比其它文献的计算值更接近于观测值。     

北京谱仪端盖簇射计数器的建造与检测

描述了北京谱仪端盖簇射计数器的结构及制造工艺.并给出丝张力,暗电流、计数管工作特性等检测结果.     

同步辐射X射线和中子粉末衍射及Rietveld精化（1）

把Rietveld精化方法用于处理同步辐射X射线和中子粉末衍射数据，使得粉末试样的结构研究有很大发展。本文在简要介绍两种粉末衍射术和Rietveld方法之后，用实例描述它们在结构精化、解未知结构、沸石、有关微孔材料及磁结构材料测定中的应用。     

试样研磨对铜合金主要元素分析结果的影响

本文从砂带，研磨方法，试样表现状况三个方面，分析了试样研磨对铜合金主要元素测试结果的影响。     

Experimental Study of Capillary Effect in Porous Silicon Using Micro-Raman Spectroscopy and X-Ray Diffraction

We investigate the capillary effect and the residual stress evolution in the wetting, drying and rewetting stages of porous silicon using x-ray diffraction and micro-Raman spectroscopy. A reversible capillary effect and an irreversible oxidation effect are the driving forces for the residual stress evolution. The lattice expansion of the porous-silicon layer is observed to decrease slightly by x-ray diffraction and the tensile residual stress increases rapidly by micro-Raman spectroscopy, with the change of about 82 MPa for the oxidation effect and the change of 2.78 GPa (enough for cracking) for the capillary effect. Therefore, the capillary effect plays a major role in the residual stress evolution in the stages. A simple microscopic liquid-bridge model is introduced to explain the capillary effect and its reversibility. The capillary emergence has a close relation with a great deal of the micro-pore structure of porous silicon.