Studies in crystal structure and luminescence properties of Eu-doped metal tungstate phosphors for white LEDs

The correlation between the crystal structure and luminescent properties of Eu³⁺-doped metal tungstate phosphors for white LEDs was investigated. Red-emitting A_4−3x(WO₄)₂:Eu_x³⁺ (A=Li, Na, K) and B_(4−3x)/2(WO₄)₂:Eu_x³⁺ (B=Mg, Ca, Sr) phosphors were synthesized by solid-state reactions. The findings confirmed that these phosphors exhibited a strong absorption in the near UV to green range, due to the intra-configurational 4f-4f electron transition of Eu³⁺ ions. The high doping concentration of Eu³⁺ enhanced the absorption of near UV light and red emission without any detectable concentration quenching. Based on the results of a Rietveld refinement, it was attributed to the unique crystal structure. In the crystal structure of the Eu³⁺-doped metal tungstate phosphor, the critical energy transfer distance is larger than 5 Å so that exchange interactions between Eu³⁺ ions would occur with difficulty, even at a high doping concentration. The energy transfer between Eu³⁺ ions, which causes a decrease in red emission with increasing concentration of Eu³⁺, appears to be due to electric multi-polar interactions. In addition, the Eu-O distance in the host lattice affected the shape of emission spectrum by splitting of emission peak at the ⁵D₀→⁷F₂ transition of Eu³⁺.     

High efficiency white luminescence of alumina doped ZnO

The application of alumina-doped ZnO (AZO) films as luminescent material for large area lighting sources has been evaluated. Thin films were grown on quartz using magnetron sputtering and subsequently annealed under argon atmosphere in a rapid thermal annealing experiment. Below 550 °C, red-shift of the optical band gap and increase of the visible emission are observed in agreement with Al diffusion and formation of interstitial oxygen atoms. At temperatures higher than 800 °C, diffusion is activated and Ostwald ripening leads to the formation of larger grains and an increase of the crystalline phase. The photoluminescence (PL) intensity is enhanced, specifically in the UV range. As a result the emission spectrum of AZO thin films can be adjusted by the annealing conditions, with equal contributions from the UV and orange parts of the PL spectrum resulting in an efficient white emission as quantified using the color space map of the Commission Internationale de l'Éclairage.     

Low temperature quenching and high efficiency Tm, La or Tb co-doped CaSc2O4:Ce phosphors for light-emitting diodes

Low temperature quenching and high efficiency CaSc₂O₄:Ce³⁺ (CSO:Ce³⁺) phosphors co-doped with Tm³⁺, La³⁺ and Tb³⁺ ions were prepared by a solid state method and the phase-forming, morphology, luminescence and application properties of these phosphors were investigated. The results showed that co-doping of Tm³⁺, La³⁺ and Tb³⁺ ions can improve the luminescence properties and decrease temperature quenching of CSO:Ce³⁺ phosphor remarkably. High efficiency green-light-emitting diodes were fabricated with the prepared phosphors and InGaN blue-emitting (∼460 nm) chips. The good performances of the green-light-emitting LEDs made from co-doped CSO:Ce³⁺ phosphors confirm the luminescence enhancement and indicate that Tm³⁺, La³⁺ and Tb³⁺ co-doped CSO:Ce³⁺ phosphors are suitable candidates for the fabrication of high efficiency white LEDs.     

基于溴钨灯和LED积分球光源的可调谐光谱分布及光谱匹配

采用溴钨灯和恒流驱动的LED混合作为积分球内部光源,提出了模拟退火算法作为光谱匹配算法,研究了光谱分布可调谐积分球光源的光谱匹配技术.仿真实验表明,该混合光源完全能够定量地模拟CIE-D65和等能光谱分布,且在辐射功率优于LED模拟结果的前提下,LED的数量分别减少79.8％和82.9％,平均相对误差分别减小10％和4...     

白光LED用蓝绿色荧光粉Sr1-xBax Al2O4:Eu2+的发光性质

采用高温固相法在还原气氛中合成Sr1-xBaxAl2 O4:Eu2+荧光材料.XRD显示,当钡掺杂量x＜0.4时,对应样品主要为单斜SrAl2 O4晶体结构;当x≥0.4时,对应样品主要为简单六方BaAl2 O4晶体结构.在360nn激发下,样品的发射光谱随x的增加由单一的绿光发射(λmax=516nm)逐渐转变为蓝绿...     

基于阵列式连体透镜的LED二次光学设计

针对LED照明系统中单颗LED及其透镜组合设计的发光量小,照射范围有限,不能满足实际照明需求的问题,提出了一种阵列式连体透镜的LED二次光学设计.根据阵列式LED的特性建立多颗了LED光学模型,并运用光学仿真软件TracePro对该二次光学设计进行模拟与仿真.结果表明,阵列式连体透镜在改善光照均匀性方面具有较好的效果,...     

不同半光强角对医用LED阵列灯珠间距影响的仿真研究

 讨论LED光源的半光强角对LED之间的最大间距的影响,采用Matlab软件对LED单元照度数据进行计算及仿真,给出相应的仿真图形。仿真结果表明:LED光源之间的最大间距与其功率无关,由于仿真的结果与理论计算值相吻合,说明在计算中所建立的LED的光学模型具有较高的可信度,所得结果为LED多阵列（如圆形,矩形,椭圆等）的仿真及应用设计奠定了理论基础。     

High efficiency top-emitting white organic light-emitting devices with a (metal/organic)2 cathode

White top-emitting organic light-emitting devices (TEOLEDs) were fabricated on a glass substrate with metal/organic multilayer of (Ag/Alq₃)₂ (Alq₃ is tris-(8-hydroxyquinoline) aluminum) as cathode. White TEOLEDs with high efficiency were obtained due to the microcavity effects. And the (Ag/Alq₃)₂ cathode, which adjusted the optical characteristics of the devices, played an important role. In addition, Alq₃–Ag–Alq₃ multilayer could work as a buffer layer, which would simplify the process of encapsulation for devices. We also calculated the electroluminescence spectrum of devices encapsulated with Al₂O₃ (150 nm) and Al₂O₃(75 nm)/ZrO₂(75 nm). And the results indicated that the CIE coordinates is almost the same between with and without encapsulating.     

大功率LED脉冲位置调制解调设计

脉冲位置调制是室内可见光通信的主要调制方式之一,它具有功率利用率高,频带利用率好,抗干扰性强的特点.为实现室内大功率白光LED照明通信,在分析PPM的原理基础上提出了一种改进的调制方式,给出了这种PPM符号的结构,并设计了大功率LED的驱动电路.其主要特点是由单片机直接输出帧同步信号加PPM信号,不设置保护时隙,其利用...     

Improved device performance in nonpolar a ‐plane GaN LEDs using a Ni/Al/Ni/Au n‐type ohmic contact

The authors report upon the increased light‐output power (P_out) via a reduction in the forward voltage (V_f) for nonpolar a ‐plane GaN LEDs using Ni/Al/Ni/Au n‐type ohmic contacts. The specific contact resistivity of the Ni/Al/Ni/Au contact is found to be as low as 5.6 × 10^–5 whereas that of a typical Ti/Al/Ni/Au contact is 6.8 × 10^–4 Ω cm², after annealing at 700 °C. The X‐ray photoelectron spectroscopy results show that the upward surface band bending is less pronounced for the Ni/Al contact compared to the Ti/Al contact, leading to a decrease in the effective Schottky barrier height (SBH). The V_f of the nonpolar LEDs decreases by 10% and P_out increases by 15% when the Ni/Al/Ni/Au scheme is used instead of the typical Ti/Al/Ni/Au metal scheme. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)