平行平板横向剪切干涉仪装调误差的矫正方法研究

对平行平板双光路横向剪切干涉仪的装调进行了研究,提出了一种矫正两个平行平板之间角度误差的方法.输出激光的波前采用Zernike多项式拟合,经过理论推导,发现两个方向差分波前求解出的倾斜像散之差与平行平板的角度误差存在线性关系,利用两个方向倾斜像散之差来矫正两个平行平板之间的角度误差.在平行平板横向剪切干涉仪的装调过程中使两个方向差分波前的倾斜像散之差为零即可以使两个方向的平行平板之间的角度误差值为零.进一步地从实验上证明了这个线性关系,对于所用的实验系统,当离焦像差为-3.224 7±0.001 8,两个方向差分波前的倾斜像散之差波动范围为±2.0×10^-3时,平行平板的角度误差可以控制在8.82″之内,高阶像差对平行平板的角度误差调节精度的影响约为1.63″.该方法具有装调简单、精确度高,易于流程化操作的优点.     

Effects on the evolution of microstructure and properties of low-silicon cast aluminum alloys in service

ABSTRACT

The microstructure evolution and property change of four kinds of low silicon cast aluminum alloy exposed to heat for 0–50?h at 200°C were studied by means of Brinell hardness test, tensile property test, friction and wear property test and XRD analysis. The results show that with increasing thermal exposure time, the tensile strength of each group of samples decreased and the amount of wear increased. The tensile strength of samples with more Si content decreased slowly. When the time increased to 50?h, the increase of wear loss was the largest. The hardness of samples after thermal exposure increases compared with that before thermal exposure. The residual stress of (311) diffraction crystal surface of AlSi3.5Mg0.66 under different thermal exposure time was measured. The type of residual stress changed from residual tensile stress to residual compressive stress after thermal exposure. There is an abnormal phenomenon that the hardness of the sample increased and the amount of wear increased, and it is evident that the distribution of residual stress was inhomogeneous after thermal exposure. It is found that with increasing thermal exposure time to 50?h, the average lattice distortion ε of the low-index crystal plane and the high-index crystal plane in the aluminum alloys gradually increased.     

纳米CaCO3微晶的晶格畸变和反常红外特性

利用TEM、SEM、X射线衍射(XRD)和Voigt函数单峰分析法讨论了纳米CaCO₃微晶结构,解释了纳米CaCO₃微晶的反常红外吸收特性,并认为微结构中的尺寸效应使得纳米CaCO₃晶格中存在较大的畸变应力,从而引起了碳酸钙微晶的红外ν₃吸收峰有约40 cm^-1的蓝移和明显窄化。     

碲锌镉晶体晶格畸变的测定与分析

在高分辨X射线衍射仪上,利用不对称布拉格衍射STD技术与单晶摇摆曲线技术相结合的方法,对碲锌镉单晶材料的晶格畸变进行了分析测定.此方法实现了一次装样,多角度、多次测定晶体的摇摆曲线,从而利用多组实验数据完成多元线性回归方程组的求解,避开了一般应变测定方法中难以确定无应力状态下衍射角的问题.所测定的生长态碲锌镉晶片晶格畸变量为10-3～10-2数量级,该畸变量是碲锌镉晶片存在成份偏析、位错和空位等缺陷以及晶片受到的应力综合作用的结果.     

掺锗提高VO2薄膜的相变温度机理研究

二氧化钒(VO₂)作为一种长久以来备受关注的新型可逆相变材料,发展潜力巨大,其相变温度(T_MIT)的调控一直是研究热点。本文主要利用锗离子作为掺杂离子探索其对VO₂薄膜T_MIT的影响,并尝试解释其内部作用机理。在约1 cm²大小抛光的氧化铝薄片上沉积了一系列含不同比例锗离子VO₂薄膜。研究发现锗离子作为掺杂离子确实有利于T_MIT的提高(本课题T_MIT最大可达84.7 ℃)。T_MIT提高的主要原因是锗离子的引入能够强化单斜态V-V二聚体的稳定性,进而增强单斜态的稳定性,使得低温单斜态向四方金红石态转变更加困难。     

基于能量变分法的钢底板波形钢腹板组合箱梁畸变效应分析

为合理分析钢底板波形钢腹板梯形箱梁的畸变效应,按各板件面内外抗弯刚度不变的原则将全截面等效为钢材,利用圣维南原理考虑顶底板对波形钢腹板的约束作用,修正畸变扇性坐标分布模式,基于能量变分法建立畸变控制微分方程。与已有文献及有限元进行对比分析,并研究腹板俯角和波形钢腹板厚度变化对畸变翘曲正应力的影响。结果表明,本文解析解与文献解及ANSYS解均吻合较好;基于圣维南原理修正后的扇形坐标分布模式更合理;利用本文等效方法亦可分析传统波形钢腹板组合箱梁的畸变效应;腹板俯角的设置有利于减小畸变翘曲正应力;波形钢腹板厚度变化对腹板与底板交接处的畸变翘曲正应力影响显著。     

针对散射激光的全向激光告警系统激光威胁源定位技术研究

针对目前散射激光告警中只能定位到散射激光光斑,而不能追溯到敌方来袭激光源的现状,构建了战场环境下包括敌方威胁激光源、照射于某平台上的散射激光光斑以及全向激光告警系统在内的空间三维几何模型,推导了平台上散射激光光斑轮廓解析表达式,以及轮廓上任意一点相对鱼眼镜头的物方半视场角表达式。将成像于探测器上的光斑进行鱼眼成像畸变校正并取光斑边缘点,计算得到三维几何模型诸参数。再将模型参数与传感器阵列信息相结合,可最终获取敌方威胁激光源相对系统的方位和距离信息。最后对以上方法进行了实验验证并对产生误差的原因进行了分析。     

激光监听实验的开设与研究

本文介绍了综合、设计性实验——激光监听实验的开设过程,以及对影响实验效果若干因素的研究。     

Study of depth-dependent tetragonal distortion of quaternary AIInGaN epilayer by Rutherford backscattering/channeling

<正>A 240-nm thick Al_0.4In_0.02Ga_0.58N layer is grown by metal organic chemical vapour deposition,with an over 1-μm thick GaN layer used as a buffer layer on a substrate of sapphire（0001）.Rutherford backscattering and channeling are used to characterize the microstructure of AlInGaN.The results show a good crystalline quality of AlInGaN(x_min= 1.5%) with GaN buffer layer.The channeling angular scan around an off-normal（1213） axis in the {1010} plane of the AlInGaN layer is used to determine tetragonal distortion e_T,which is caused by the elastic strain in the AlInGaN.The resulting AlInGaN is subjected to an elastic strain at interfacial layer,and the strain decreases gradually towards the near-surface layer.It is expected that an epitaxial AlInGaN thin film with a thickness of 850 nm will be fully relaxed （e_T=0）.     

Low distortion recording of transient low- light-level phenomena

Two types of low-light-level image sensors have been investigated for use in low distortion recording: an SIT-vidicon (Silicon-Intensifier Target), and a sensor consisting of a newvicon and two stage proxifier. The results are compared and discussed. In addition, a triggerable video frame store is described.