Ce掺杂6H-SiC电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,对未掺杂及Ce掺杂6H-SiC的电子结构和光学性质进行理论计算.计算结果表明,未掺杂6H-SiC是间接带隙半导体,其禁带宽度为2.045 eV,掺杂Ce元素,带隙宽度下降为0.812 eV.未掺杂6H-SiC在价带的低能区,Si-3s、C-2s电子轨道对态密度的贡献较大,在价带的高能区,主要是由Si-3p、Si-3s、C-2p态组成.掺杂后Ce原子的4f轨道主要贡献在导带部分,掺杂后电导率提高.未掺杂时,只有一个介电峰,是价带电子跃迁到导带电子所致,掺杂后有两个介电峰,第一个介电峰是由于导带电子跃迁到Ce原子4f轨道上产生,第二个峰是价带电子向导带电子跃迁产生.未掺杂6H-SiC,在能量为10.31 eV处吸收系数达到最大值,掺杂后在能量为6.57 eV处,吸收系数达到最大值.     

Ce掺杂CrSi2电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,对未掺杂及Ce掺杂CrSi2的电子结构和光学性质进行理论计算。计算结果表明,未掺杂CrSi2是间接带隙半导体,其禁带宽度为0.392 eV,掺杂Ce元素,仍然是间接半导体,带隙宽度下降为0.031eV。未掺杂CrSi2在费米能级附近主要由Cr-5d、Si-3p态贡献。Ce掺杂后在费米能级附近主要由Cr-5d轨道,Ce-4f轨道,C-2p,Si-3p轨道贡献,掺杂后电导率提高。未掺杂CrSi2有两个介电峰,掺杂后,只有一个介电峰。未掺杂CrSi2,在能量为6.008处吸收系数达到最大值,掺杂后在能量为5.009eV处,吸收系数达到最大值。     

A tight-binding study of LUMO states in ellipsoidal silicon nanocrystals

In this paper we report on tight-binding calculations of lowest unoccupied molecular orbitals states for silicon ellipsoidal nanocrystals. The electronic structure has been calculated for different nanocrystal shapes either keeping constant or varying the number of silicon atoms. We have found that changing the ellipsoid aspect ratio a non-obvious energy level structure is obtained. The implications for the infrared optical transitions and their relationship with the polarization of the radiation involved are discussed.     

一系列酞菁红外谱图的性质

因为酞菁在信息、医疗、化工等众多领域有很广泛的应用,所以近百年来一直是科学家研究的热点课题.本文首次对一系列氮杂金属酞菁谱图性质研究,这些酞菁是氮杂酞菁铜、氮杂酞菁锌、氮杂酞菁钴、氮杂酞菁镍和氮杂酞菁汞,这5种氮杂金属酞菁的红外光谱图性质进行研究与比较.这些原因主要和中心配位为金属原子不同引起的.     

Anomalous Energy Minima Studies by Mindo/3

A previous publication¹ utilizing the INDO² and CND0/2³ semi-empirical SCF-MO techniques has shown that these methods predict anomalous minima in the potential surfaces of small molecules and molecular ions, particularly those of type 0-X-0. Two studies have bcmen published concerning the removal of such anomalous pre-dictiors. The first approach⁴ involved reparameterization of the INDO method – specifically involving the Slater exponents α, and the bonding parameters B° of carbon and oxygen – to remove the anomalous iinimum from the potential surface of C0₂. It was de-monstrated that reparameterization could be used to remove the Salse minimum in this case; but only at the expense of the other predictive qualities of INDO, or with the prediction of an unreal-istically broad energy minimum – neither of which could b e con-sidered an acceptable solution.     

The second Born approximation in electron-helium scattering in a Nd-YAG laser field

The dynamics of laser-assisted elastic collisions in helium is studied using the second-order Born approximation. Detailed calculations of the scattering amplitudes are performed by using the Sturmian basis expansion. Differential cross sections for elastic scattering with the net absorption/emission of up to two photons are calculated for collision energies of 5 eV, 10 eV, and 20 eV. We discuss the influence of the low-energy electrons on the differential cross section (DCS) as a function of the scattering angle for selected choices of the laser frequency and the number of photons exchanged between the external field and electron-helium system.     

三甲基硅、三甲基锗和三甲基锡取代的一系列芘衍生物的紫外吸收和荧光性质

被三甲基硅(Me3Si-)、三甲基锗(Me3Ge-)和三甲基锡(Me3Sn-)取代的芘衍生的紫外吸收波长和未取代的芘相比较,波长红移.一,二,三,四取代三甲基硅芘最大吸收波长红移小于10nm.荧光强度和周期按Me3SiAr＞Me3GeAr＞Me3SnAr顺序减弱.1,3,6,8-四-三甲基硅芘的荧光强度在一系列芘衍生物中是最大的.     

Ti和Al共掺杂ZnS的电子结构和光学性质

基于密度泛函理论的第一性原理研究Ti和Al单掺杂和(Ti,Al)共掺杂ZnS的能带结构、电子态密度分布、介电函数、光学吸收系数,分析了掺杂后电子结构与光学性质的变化.计算结果表明:掺杂后禁带中引入了新的杂质能级,费米能级进入导带.掺杂改变了ZnS晶体的导电特性,使它表现出金属特性,导电性能增强;与纯净ZnS相比,Ti单掺杂和(Ti,Al)共掺杂ZnS的吸收边均出现明显的红移,且在1.79eV左右出现了一个新峰;而Al单掺杂ZnS的吸收边则发生明显的蓝移,且不产生新的吸收峰.     

第一性原理对SinMg(n=1-12)团簇结构、稳定性与电子性质的研究

运用密度泛函理论(DFT)的杂化密度泛函B3LYP方法,在6-311G基组水平上对 团簇进行了构型优化、频率分析与电子性质计算.同时讨论了团簇的平均结合能、能级间隙、二阶能量差分、自然电子布居、极化率.研究结果表明： 团簇的基态绝大多数为立体结构. 时,体系的基态为自旋三重度, 时,则为单重态.镁原子的掺入使得主团簇的电子性质发生了明显的变化,掺杂使体系的平均结合能降低,能隙减小,化学硬度减小,电子亲和能增大.电子总是从 原子向 原子转移.团簇中原子之间的成键相互作用随n的增大 而增强,团簇的电子结构随n的增大而趋于紧凑.     

An optical measurement of vortex shape at a free surface

We have proposed an optical method of vortex shape measurement based on Fourier transform profilometry (FTP) and verified it by experiment. The results of our experiment proposed in this paper show that FTP can efficiently reconstruct the vortex shape at a free surface and this method is suitable for wide use in studying such problems as liquid shear flow, wake of an object, flow behind a bluff body, and wetting angle.