一种计算量子拍讯号强度的新方法

本文运用密度矩阵方程推导了V型三能级系统的荧光量子拍讯号强度,并对其结果进行了分析和讨论。     

ZnS and ZnSe Nanoparticles via Solid-State and Solution Thermolysis of Zinc Silylchalcogenolate Complexes

The thermolysis of the zinc trimethylsilylchalcogenolate complexes (N,N′-tmeda)Zn(ESiMe₃)₂ (E = S, 1; E = Se, 2) and (3,5-Me₂-C₅H₃N)₂Zn(ESiMe₃)₂ (E = S, 3; E = Se, 4) has been investigated. Solid-state thermal decomposition of complexes 1–4 above 250°C results in the formation of hexagonal ZnS and cubic ZnSe, respectively, via the liberation of TMEDA (1–2) or 3,5-lutidine (3–4) and E(SiMe₃)₂. Solid-state or solution thermolysis of these complexes up to 200°C produces nanocrystalline ZnS and ZnSe materials whose surface is protected by either coordinated TMEDA or 3,5-lutidine ligands. The progress of the step-wise solid-state decomposition of these complexes was monitored by thermogravimetric and single differential thermal analysis and volatile decomposition products in both solution and solid-state experiments were identified by GC/MS.Dedicated to Professor Brian F. G. Johnson on the occasion of his retirement.     

载波钝化和钼酸盐后处理对不锈钢钝化膜性能的影响

一般认为交流电对金属的腐蚀过程具有加速作用,但我们发现,在直流电位基础上叠加适当波形、幅值和频率的交流电对不锈钢进行载波钝化,尔后再进行适当后处理可使钝化膜的稳定性提高,我们曾就不经后处理的载波钝化过程进行过探讨,本文着重探讨钼酸盐后处理对载波钝化膜表面状态和化学稳定性改善的作用机理。     

二安替比林基－（3－羟基）苯基甲烷光度法测定痕量钒

合成和鉴定了二安替比林基－（３－羟基）苯基甲烷（ＤＡｍＨＭ），研究了它与Ｖ（ｖ）的显色反应。在磷酸介质中，在Ｍｎ（Ⅱ）和吐温－４０存在下，ＤＡｍＨＭ与Ｖ（Ｖ）生成橙黄色化合物，λ＿（ｍａｘ）＝４８０ｎｍ，ε＝１．０３×１０￣６Ｌ·ｍｏｌ￣（－１）·ｃｍ￣（－１），Ｖ（ｖ）量在０．２～１．２ｕｇ／２５ｍＬ间符合比尔定律，体系灵敏度高，稳定性好，用于中草药中痕量钒的测定，结果满意。     

A resonance light scattering method for determination of DNA using Ru(bpy)2PIP(V)2+

A novel method for DNA detection is proposed that is based on the enhancement of resonance light scattering (RLS) of Ru(bpy)₂PIP(V)²⁺ at pH 2.7. Under optimum conditions, good linear relationships were obtained in the wide concentration range of 16–5120 ng mL⁻¹. The linear equation is I _RLS = 13.15 + 171.4 c (μg mL⁻¹), the correlation coefficient (r) is 0.9999. The detection limit of calf thymus DNA is 5.02 ng mL⁻¹. Plasmid DNA extracted from bacillus subtilis was determined by the method with satisfactory results.     

Oxovanadium(V)-catalyzed enantioselective Meerwein-Ponndorf-Verley cyanation of aldehydes using acetone cyanohydrin

Oxovanadium(V)(salen) complex 4 was found to catalyze Meerwein-Ponndorf-Verley cyanation of aliphatic aldehydes with good to high enantioselectivity. This cyanation showed a positive nonlinear effect.     

Syntheses, structures and third-order non-linear optical properties of homometal clusters containing molybdenum

Both the homometal cluster [P(ph₄)]₂[Mo₂O₂(μ-S)₂(S₂)₂] (1) and [Mo₂O₂(μ-S)₂(Et₂dtc)₂] (2) (Et₂dtc=diethyl-dithiocarbamate) were successfully synthesized by low-temperature solid-state reactions. X-ray single-crystal diffraction studies suggest that compound (1) is a dinuclear anion cluster, and compound (2) is a dinuclear neutral cluster. The two compounds were characterized by elemental analyses, IR spectra and UV-Vis spectra. The third-order non-linear optical (NLO) properties of the clusters were also investigated and all exhibited nice non-linear absorption and self-defocusing performance with moduli of the hyperpolarizabilities 5.145×10⁻³⁰ esu for (1) and 5.428×10⁻³⁰ esu for (2).     

Redox behavior of V/MgO catalyst in H2S wet oxidation at room temperature

The room temperature wet catalytic oxidation was conducted in a batch reactor with V/MgO catalyst. The XRD study of the catalyst used indicated that V/MgO could not only oxidize H2S to sulfur selectively, but also prevent the sulfidation of metal oxide effectively at the room temperature. The XPS study indicated that the H2S oxidation with V/MgO could proceed by a redox mechanism (V⁵⁺↔ V⁴⁺) and that V³⁺ formation (V⁴⁺→ V³⁺), was responsible for the deactivation of V/MgO. This revised version was published online in June 2006 with corrections to the Cover Date.     

2,5-二(2-菲基)-[3,2-b]并二噻吩的合成、表征及在有机薄膜晶体管中的应用

本文合成了2,5-二(2-菲基)-[3,2-b]并二噻吩(PhTT), 表征了其基本的物理和化学性质, 制备了相应的有机薄膜晶体管.     

Temperature-dependent dry etching characteristics of III–V semiconductors in HBr- and HI-based discharges

Microwave discharges of HBr/H₂/Ar and H/H₂/Ar with additional do biasing of the sample were used to etch InP, GaAs, and AlGaAs at temperatures between 50–250°C. The etch rates increase by factors of 3–50 and 5–9, respectively, for HBr-and HI-based discharges over this temperature range, but display non-Arrhenius behavior. The etched surfaces became very rough above 100°C for InP with either discharge chemistry due to preferential loss of P, while GaAs and AlGaAs are more tolerant of the elevated temperature etching. The near-surface electrical properties of InP are severely degraded by etch temperatures above 100°C, while extensive hydrogen in-diffusion occurs in GaAs and AlGaAs under these conditions, leading to dopant passivation which can be reversed by annealing at 400°C.