Characterization of the elasticity and anelasticity of bulk glasses by dynamical subresonant and resonant techniques

The determination of the elastic and anelastic characteristics by means of original non-destructive techniques has been applied to glasses and glass composites in order to link together the macroscopic data with structural aspects. The dynamical Young’s modulus determined by a free resonance technique allows a good accuracy measurement. Some examples concerning oxides, Ge(As)Se or metallic glasses are presented: the abrupt drop of the modulus in the range of the glass-transition temperature T_g is a general observation, which leads us to an attempt at normalization of the curves E versus T on master curves E/E(T_g) versus T/T_g. To study the viscoelastic properties, a low frequency torsional spectrometer is preferentially used to measure the damping due to viscous movements at a microscopic scale. A study of MgSiAlON glasses allows us to show that the intrinsic activation energy is much smaller than the one measured by creep or relaxation tests and that the glassy transition is characterized by a smooth change from vitreous solid (highly correlated) to quasi-liquid behavior; this has been confirmed on a metallic glass.     

Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport

We report on studies of an In_0.12Ga_0.88N/GaN structure with three 35 Å thick quantum wells (QWs) grown by metalorganic vapor phase epitaxy with employment of mass transport. The mass-transport regions demonstrate a threading dislocation density less than 10⁷ cm⁻². The photoluminescence (PL) spectrum is dominated by a 40 meV—narrow line centered at 2.97 eV at 2 K. This emission has a typical PL decay time of about 5 ns at 2 K within the PL contour. An additional line with longer decay time (about 200 ns) is observed at an energy about 2.85 eV. The position of this line shifts towards higher energies with increasing excitation power. The data are consistent with a model, where the PL originates from at least two nonequivalent QWs, which could be realized due to a potential gradient across the layers.     

Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 μm lasers

Strain-compensated GaInNAs/GaAsP quantum well structures and lasers were grown by gas source molecular beam epitaxy using a RF-plasma nitrogen radical beam source. The optimal growth condition for the quantum well structure was determined based on room-temperature photoluminescence measurements. Effects of rapid thermal annealing (RTA) on the optical properties of GaInNAs/GaAsP quantum well structures as well as laser diodes are examined. It was found to significantly increase the photoluminescence from the quantum wells and reduce the threshold current density of the lasers, due to a removal of N induced nonradiative centers from GaInNAs wells.     

AlGaN-based UV photodetectors

Al_xGa_1−xN alloys are very attractive materials for application to ultraviolet photodetection. AlGaN photoconductors, Schottky photodiodes, metal–semiconductor–metal photodiodes, p–n junction photodetectors and phototransistors have been recently developed. In this work we analyse the performance of AlGaN-based photodetectors, discussing present achievements, and comparing the characteristics of the various photodetector structures developed to date.     

Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres

We investigated the effect of different annealing atmospheres on contact behaviour of Ni/Au contacts on moderately doped p-GaN layers. We used the annealing gases N₂, O₂, Ar, and forming gas (N₂/H₂) at varying annealing temperatures from 350°C to 650°C in steps of 50°C. The p-GaN samples were either metalorganic chemical vapor deposition or molecular beam epitaxy grown. Contact characterization was done after each annealing step by using the circular transmission line model. Specific contact resistances were determined to be in the low 10⁻⁴ Ω cm² range for oxidized contacts. Accompanying chemical analysis using depth resolved Auger electron spectroscopy revealed that NiO was formed and Au diffused towards the interface, whereas annealing in forming gas prevented oxidation and did not lead to Ohmic behaviour.     

电感耦合等离子体质谱法分析死后人体血液与一般人群血液中9种金属元素含量差异

建立了血液样本中金属元素的微波消解－电感耦合等离子体质谱（ICP－MS）检测方法。通过优化消解条件,以铋（Bi）和铟（In）双内标校正,对死后人体血液样本和一般人群对照样本中镁（Mg）、铬（Cr）、砷（As）、锶（Sr）、镉（Cd）、钡（Ba）、汞（Hg）、铊（Tl）、铅（Pb）9种金属元素含量进行了检测,并运用统计学方法比较了其差异与关联性。结果表明,在2mL双氧水、5mL硝酸、190℃的消解条件下,样品的消解效果较好。9种元素线性良好,相关系数（r²）不小于0.9977,检出限为0.0004~0.0496ng/mL,加标回收率为86.5%~110%,日内相对标准偏差（RSD）为0.50%~5.9%,日间RSD为2.5%~8.5%,回收率和精密度符合检测要求。9种金属元素数据均不符合Komogorov－Smirnov正态性检验,而两组数据的Mann－WhitneyU检验结果存在显著差异（P<0.05）。采用Spearman秩相关分析金属之间的相关性,发现大多数金属元素之间显著相关。通过建立二分类Logistic回归模型,研究了样本类型与血样中金属元素浓度的比值比（OR）及95%置信区间,将Mg、Cd、Ba元素同时纳入Logistic回归模型,发现Mg元素无统计学意义（P>0.05）,Cd、Ba元素含量与血液样本类型有关联性。该研究建立的检测方法及基础数据可为法医金属元素中毒相关案件的检测和中毒认定提供重要参考和科学数据支撑。