Detailed Description of Mixed Symmetry States in 94Mo Using Interacting Boson Model

We have investigated the low-lying collective states and electromagnetic transitions in 94Mo within the framework of the interacting boson model. The influence of model parameters on the energy levels and electromagnetic properties has been investigated. The analysis of the obtained results and the parameter values predict that the 23+state is the lowest mixed symmetry state with pure F = Fmax - 1 in this nucleus. The calculated results predicate that the 25+ (two-Q-phonon) mixed symmetry state is closed to the J = 2+ at 2.870 MeV in the experimental data, and the 2.965 MeV state is the lowest mixed symmetry with J = 3+.     

Phonon density of states of ann-component alloy

We have generalized the coherent potential approximation (CPA) of Tripathi and Behera to the case of ann-component alloy. It is seen that then-component CPA density of states reproduces the binary, ternary quartenary alloys etc when the appropriate limits are adopted.     

Charge screening in valence band of solids and in the Fermi sea. Origin of weak-boson masses

Summary An attempt is made to explain the masses of Z and W^± bosons by means of a screening mechanism analogous to charge screening in metals. It considers the effect of the electroweak force on the distribution of negativekinetic-energy neutrinos, which fills the whole universe (neutrino Fermi sea). The large weak-boson masses appear to be a direct consequence of the vanishing neutrino mass.     

Band bending at the Si(1 1 1)–SiO2 interface induced by low-energy ion bombardment

Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(1 1 1)–SiO₂ interface after sub-keV Ar⁺ ion bombardment. The band bending of about 0.5 eV resembles that for Si(1 0 0)–SiO₂, and both interfaces exhibit two kinetic regimes for the evolution of band bending upon annealing due to defects healing. The healing takes place about an order of magnitude more quickly at the (1 1 1) interface, however, probably because of less fully saturated bonding and higher compressive stress.     

制备相干态腔场GHZ态

提出了一种利用简并Ⅴ型三能级原子与相干态光场(大失谐条件下)Raman相互作用实现类自旋的腔场Greenberger-Home-Zeilinger(即GHZ)态的新方案。     

Tomography of Binomial States of the Radiation Field

The symplectic, optical, and photon-number tomographic symbols of binomial states of the radiation field are studied. Explicit relations for all tomograms of the binomial states are obtained. Two measures for nonclassical properties of these states are discussed.     

States and Structure of von Neumann Algebras

We summarize and deepen recent results on the interplay between properties of states and the structure of von Neumann algebras. We treat Jauch–Piron states and the concept of independence in noncommutative probability theory.     

Spatially localized states in Marangoni convection in binary mixtures

Two-dimensional Marangoni convection in binary mixtures is studied in periodic domains with large spatial period in the horizontal. For negative Soret coefficients convection may set in via growing oscillations which evolve into standing waves. With increasing amplitude these waves undergo a transition to traveling waves, and then to more complex waveforms. Out of this state emerge stable stationary spatially localized structures embedded in a background of small amplitude standing waves. The relation of these states to the time-independent spatially localized states that characterize the so-called pinning region is investigated by exploring the stability properties of the latter, and the associated instabilities are studied using direct numerical simulation in time.     

Sn/Ge(1 1 1) α-phase: characterization of image resonances by specular electron reflection and selective electron scattering

Image potential resonances on the Sn/Ge(1 1 1) α-phase are investigated by two closely related methods: specular electron reflection and so-called selective electron scattering. Electrons from image resonances are detected on this surface at 120 and 300 K, i.e. below and above the phase transition at about 200 K. The dispersion of the image resonances reveals at these two temperatures equivalent effective electron masses, which are characteristic for this type of electronic surface states. The results of the two methods are consistent according to the similarity of the scattering processes. Changes in the loss peak intensity with the annealing temperature are assigned to the surface quality and are reflected by characteristic photoemission intensities.