Ellipticity of the Linearly Polarized He-Ne Laser Radiation Reflected by the Leaves of Plants

The phenomenon of elliptical polarization of the linearly polarized radiation reflected near the Brewster angle by the leaves of plants has been investigated. It has been shown that the appearance of ellipticity is associated with the complex structure of the cuticle.__________Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 2, pp. 236–240, March–April, 2005.     

Temperature profiles in a two-component heterogeneous system heated with a cw laser

A formalism has been developed to calculate the steady-state temperature profiles induced by a cw laser in a composite system comprising a thick medium covered with a film of another medium. The analysis is carried out assuming that thermal and optical properties of the media are temperature-independent. A concept of the effective thermal conductivity for the system is introduced in terms of the maximum temperature rise. Temperature-distributions are numerically computed in typical cases for a circular Gaussian beam to illustrate dependence on film thickness, thermal conductivities and absorption coefficients of the media and size of the laser beam.     

Vacuum Ultraviolet Spectrum of IBr

Rydberg transitions for the interhalogen IBr, are reported in the wavelength region 160-130 nm.     

Development of a miniature double-pass cylindrical mirror electron energy analyzer (DPCMA), and its application to Auger photoelectron coincidence spectroscopy (APECS)

We have developed a miniature double-pass cylindrical mirror electron energy analyzer (DPCMA) with an outer diameter of 26 mm. The DPCMA consists of a shield for the electric field, inner and outer cylinders, two pinholes with a diameter of 2.0 mm, and an electron multiplier. By assembling the DPCMA in a coaxially symmetric mirror electron energy analyzer (ASMA) coaxially and confocally we developed an analyzer for Auger photoelectron coincidence spectroscopy (APECS). The performance was estimated by measuring the Si-LVV-Auger Si-1s-photoelectron coincidence spectra of clean Si(1 1 1). The electron-energy resolution of the DPCMA was estimated to be E/ΔE = 20. This value is better than that of the miniature single-pass CMA (E/ΔE = 12) that was used in the previous APECS analyzer.     

Valence band and band gap photoemission study of (1 1 1) In2O3 epitaxial films under interactions with oxygen, water and carbon monoxide

Synchrotron radiation ultraviolet photoemission experiments at photon energies of 150 and 49 eV were performed on an epitaxial layer of (1 1 1) In₂O₃ with good crystallinity as established by a standard scanning probe and diffraction methods. Valence band (VB) and band gap photoemission spectra were monitored under separate oxygen, water and carbon monoxide exposures (100 L) at different activation temperatures within the range utilized for chemiresistive gas sensors (160-450 °C). Large changes in photoemission response within the whole VB were observed for all gases. Regular shifts of the valence band edge relative to the Fermi energy were found under gas exposures on two kinds of surface (partially reduced or partially oxidized), and are interpreted as changes of surface potential. Treatments in oxygen resulted in upward band bending (∼0.5 eV at T = 320 °C). Regardless of activation temperature, treatments in water resulted in downward band bending, but with small changes (<0.1 eV). Reduction properties of carbon monoxide were observed only at high temperatures of T ? 370 °C. At temperatures of 160 and 250 °C unusual “oxidizing” behavior of CO was observed with upward band bending of ∼0.7 eV (160 °C). Oxidizing and reducing effects of the gas interactions with the (1 1 1) In₂O₃ surface in all cases were accompanied by a corresponding behavior, i.e., a decrease or increase in photoemission response from so-called defect states in the band gap near the top of the valence band. The increases of photoemission within a band gap with maxima at binding energies (BE) of 0.4 (O₂-induced peak) and 1.0 eV (CO-induced peak) were, respectively, found for interactions with O₂ and CO for low temperatures (T = 160 and 250 °C). These responses were ascribed to acceptor-like electronic levels of O₂ and CO chemisorption states, respectively. A definite split of the top VB peak (BE ∼ 4.0 eV) was found under CO dosing at 160 °C. Established knowledge of the CO interaction with the (1 1 1) In₂O₃ surface explains earlier revealed acceptor-like behavior of In₂O₃ film conductivity during CO detection at operational temperatures lower than 250 °C through the formation of acceptor-like electronic levels of adsorbed CO molecules.     

石英玻璃低能质子辐照损伤动力学研究

地面模拟研究了JGS3光学石英玻璃在真空、热沉和能量低于200keV的低能质子辐照下表面光学性能变化的基本规律．并建立了辐照损伤色心演化的动力学唯象模型。试验结果表明．大通量低能质子辐照对石英玻璃表层具有明显的表面损伤效应。随着辐照吸收剂量的增加,光密度变化先以线性规律迅速增加．加进一步增加时逐渐呈现饱和趋势;采用较高能量辐照作用后光密度变化出现饱和趋势的拐点提前,且饱和数值降低。根据对试验结果的分析,建立了低能质子辐照下石英玻璃色心演化的动力学模型．并给出了光密度变化的表达式。采用模型结果进行数学模拟,模拟曲线与试验结果曲线相似。因此所建立的动力学模型可以用来定量描述低能质子辐照下石英玻璃光学性能随辐照吸收剂量的变化规律。     

纳米银胶的光化学制备及其特性研究

采用紫外光化学法制备了黄色银胶,并研究了硝酸银和柠檬酸三钠的浓度对制备的银胶吸收光谱的影响,发现随着硝酸银浓度的增加银胶的吸收峰先兰移然后红移;当柠檬酸三钠的浓度增加时,硝酸银吸收峰的位置几乎不变,而吸收峰强度增大.最后通过透射电镜成像研究其尺寸,发现其尺寸分布在5~20 nm之间.     

Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology

This paper studies the total ionizing dose radiation effects on MOS (metal-oxide-semiconductor) transistors with normal and enclosed gate layout in a standard commercial CMOS (compensate MOS) bulk process. The leakage current, threshold voltage shift, and transconductance of the devices were monitored before and after $\gamma $-ray irradiation. The parameters of the devices with different layout under different bias condition during irradiation at different total dose are investigated. The results show that the enclosed layout not only effectively eliminates the leakage but also improves the performance of threshold voltage and transconductance for NMOS (n-type channel MOS) transistors. The experimental results also indicate that analogue bias during irradiation is the worst case for enclosed gate NMOS. There is no evident different behaviour observed between normal PMOS (p-type channel MOS) transistors and enclosed gate PMOS transistors.     

From Schwarzschild to Kerr due to Black Hole Quantum Tunnelling

Hawking radiation can be viewed as a process of quantum tunnelling near black hole horizon. When a particle with angular momentum tunnels across the event horizon of Schwarzschild black hole, the black hole will change into a Kerr black hole. The emission rate of the massless particles with angular momentum is calculated, and the result is consistent with an underlying unitary theory.     

Photoluminescence and optical absorption properties of polymer modified carbon nanotubes

Polymethyl methacrylate modified carbon nanotubes were prepared using γ radiation, and the modified carbon nanotubes exhibited strong luminescence (∼ ∼568 nm) at room temperature and an absorption peak at ∼ ∼247 nm can be observed in the polymer modified samples.