自相似结构壳模型

为了扩展以简谐振子为基矢的常规壳模型（ＳＭ）计算到晕核，提出了自相似结构壳模型（ＳＳＭ）．通过对简谐振子动能项和势能项的重度规以及单粒子平均场模拟，可以得到ＳＳＭ中的单粒子轨道有态相关的圆频率，在ＳＳＭ中，晕核大的均方根半径、厚的中子皮以及Ｂｏｒｒｏｍｅａｎ晕核和的束缚态性质能够再现出来。     

Research on sound radiation from body in free field

I.IntroductionWhenastructurcvibratcs,itsvibratingsurfacewillmakesurroundingmediummovetogethcrwithit.Ifthernotionissofastthatthcmediumroundthestructureproduccaloca1contractionandcxpansionandthcypropagatefaraway,thesoundradiationisformed.Itispossiblctodcscribeanalytica11ytheradiationfic1dofsimplyandregularlyshapcdsourcessuchaspointsoundsourccs,spherica1soundsourccsandinflnite1engthllnearsoundsourccs,butitisa1mostimpossib1ctosolvetheradiationfiledbyanyanalyt-ica1methodforsourcesofvcrycomplicateds…     

Effective-Field Theory on High Spin Systems with Biaxial Crystal Field

Based on the effective-field theory with self-spin correlations and the differential operator technique,physical properties of the spin-2 system with biaxial crystal field on the simple cubic, body-centered cubic, as well as faced-centered lattice have been studied. The influences of the external longitudinal magnetic field on the magnetization,internal energy, specific heat, and susceptibility have been discussed in detail. The phenomenon that the magnetization in the ground state shows quantum effects produced by the biaxial transverse crystal field has been found.     

The Properties of Light Pressure Force with High Order in Laser Fields

1　Ｉｎｔｒｏｄｕｃｔｉｏｎ　　Ｉｎｒｅｃｅｎｔｙｅａｒｓ,ｂｏｔｈｔｈｅｔｈｅｏｒｅｔｉｃａｌａｎｄｅｘｐｅｒｉｍｅｎｔａｌｉｎｖｅｓｔｉｇａｔｉｏｎｓｏｎｌａｓｅｒｃｏｏｌｉｎｇａｎｄｔｒａｐｐｉｎｇｈａｖｅｂｅｃｏｍｅｏｎｅｏｆｔｈｅｍａｊｏｒｆｉｅｌｄｓｉｎａｔｏｍｉｃ,ｍｏｌｅｃｕｌａｒａｎｄｏｐｔｉｃａｌ ｐｈｙｓｉｃｓ[1～ 8] .Ｔｈｅｄｅｖｅｌｏｐｍｅｎｔｏｆｌａｓｅｒｃｏｏｌｉｎｇａｎｄｔｒａｐｐｉｎｇｔｅｃｈｎｏｌｏｇｙｉｓｉｍｐｏｒｔａｎｔｆｏｒｔｈｅａｐｐｌｉｃａｔｉｏｎｓｓｕ…     

Spectral action and big desert

The values of the Higgs mass are obtained for two possibilities of extending the standard model in a way compatible with the existence of a noncommutative structure at high energies. We assume the existence of a big desert between the low energy electroweak scale and the high energy scale Λ=1.1×10¹⁷ GeV, where noncommutative features become relevant. We conclude that it is extremely difficult to depart from the Higgs mass value obtained from noncommutative geometry for the standard model with three generations only.     

Stratifiable Families of Extremals and Sufficient Conditions for Optimality in Optimal Control Problems

It is shown that, if a parametrized fämily of extremals F can be stratified in a way compatible with the flow map generated by F, then those trajectories of the family which realize the minimal values of the cost in F are indeed optimal in comparison with all trajectories which lie in the region R covered by the trajectories of F. It is not assumed that F is a field covering the state space injectively. As illustration, an optimal synthesis is constructed for a system where the flow of extremals exhibits a simple cusp singularity.     

Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE _c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE _G =0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E _c ). From these results, it is suggested that the PEN-FET becomes a memory device.