应变量子阱激光器阱宽与组分的确定和增益特性的理论研究

本文根据一维势阱和应变效应的简单理论,给出一种既简单又较准确的确定量子阱的组分和阱宽的方法。并且,针对较为常用的波长为1.3μm的InGaAs/InGaAsP材料以及最新兴起的InAsP/In材料应变量子阱激光器,利用该方法得到了组分和量子阱阱宽。再根据这些参数,利用变分法计算了量子阱的能带结构和二维电子气状态密度。然后,在选取不同的线形函数的情况下分别计算了对应于不同的注入载流予浓度时的这两种激光器的线性增益和微分增益。     

Effect of hetero atom on the conformational stability of the forming ring in the transition structures of Type-II ene cyclization: a theoretical study

The chair conformation of the forming ring in the transition structure, for its high stability, is usually considered for the determination of the overall stereoselectivity in a type-II ene cyclization reaction. However, present theoretical investigation reveals that the presence of a heteroatom like oxygen or nitrogen in the tether of type-II carbonyl ene cyclization stabilizes the transition structure, in which the forming ring adopts a boat conformation. Due to such stability of the boat conformer the overall stereoselectivity of some type-II reactions may differ from the expected one.     

Tunability of optical gain (SWIR region) in type-II In0.70Ga0.30As/GaAs0.40Sb0.60 nano-heterostructure under high pressure

The interest in applying an external pressure on a nano-heterostructure is to attempt to extract more information about the electronic structure through distortion of the electronic structure. This paper reports the tunability of the optical gain under the high pressure effect in M-shaped type-II In_0.70Ga_0.30As/GaAs_0.40Sb_0.60 symmetric lasing nano-heterostructure designed for SWIR generation. In order to simulate the optical gain, the heterostructure has been modeled with the help of six band k.p method. The 6×6 diagonalized k.p Hamiltonian has been solved to evaluate the valence sub-bands (i.e. light and heavy hole energies); and then optical matrix elements and optical gain within TE (Transverse Electric) mode has been calculated. For the injected carrier density of 5×10¹²/cm², the optimized optical gain within TE mode is as high as ~9000/cm at the wavelength of ~1.95 µm, thus providing a very important alternative material system for the generation of SWIR wavelength region. The application of very high pressure (2, 5 and 8 GPa) on the structure along [110] direction shows that the gain as well as lasing wavelength both approach to higher values. Thus, the structure can be tuned externally by the application of high pressure within the SWIR region.     

Computational screening of vdWs heterostructures of BSe with MoSe2 and WSe2 as sustainable hydrogen production materials

Recently, fabricating type-II vertical van der Waals (vdWs) heterostructure is a promising material for hydrogen production. The absorption capability, charge density distributions, band alignments and electronic properties of the monolayers and heterostructures are systematically investigated using computational studies. Using ab initio molecular dynamics, binding energy and phonon calculations, the stability of the heterostructures are verified. Both heterostructures are type-II materials, which can increase the separation of charge carriers. Moreover, the charge density difference and the potential drop across the interface of MSe₂/BSe creates a high built-in electric field that can prevent the recombination of charge carriers. We found that the visible-light optical properties of both heterostructures are much enhanced with suitable bandgap energy for water splitting. The band alignment suggests that the heterostructures straddle water redox potentials in acid solutions (0 < pH < 7). Our study predicted that MSe₂/BSe vdW heterostructures have great potential for photocatalytic hydrogen production.     

Efficient weak-light amplification through phase control in a quantum well waveguide with electron spin coherence

We propose and analyze a new scheme to realize efficient weak-light amplification via phase control in a GaAs quantum well (QW) waveguide when driven coherently by two orthogonally polarized optical fields (a σ-polarized probe field and a π-polarized control field). It is shown that the amplification and absorption properties of the system are very sensitive to the relative phase between these driving fields. By choosing the relative phase appropriately, the enhanced amplification of the weak σ-polarized radiated field can be achieved in such a QW waveguide. We support our results by numerical calculation and analytical explanation. These theoretical investigations may find applications in devising the QW waveguide amplifier at room temperature.     

Neural estimator to determine alpha parameter in terms of quantum-well number

The value of the α (Alpha) parameter, which is also called Linewidth enhancement factor, is particularly important in optical communication systems. This paper presents a new approach based on artificial neural networks (ANNs) to determine the α parameter for different number of quantum-wells (QWs). ANNs are trained in different structures with the use of five learning algorithms to obtain better performance and faster error convergence. The Levenberg–Marquardt (LM) algorithm, which has a quadratic speed of convergence, gives the best result among other learning algorithms used in the analysis. Both the training and the test results are in very good agreement with the experimental results reported elsewhere.     

Injection level dependence of the gain, refractive index variation, and alpha (α) parameter in broad-area InGaAs deep quantum-well lasers

In this study, a single, simple and an accurate computer-aided design model is developed in order to obtain the injection level dependence of the critical quantities of broad-area (with a width of 50 μm or more) InGaAs deep quantum-well (QW) lasers. Each of these quantities (gain, refractive index variation, and alpha (α) parameter) requires lengthy mathematical calculations with the use of different theories, assumptions, approximations, and estimations of some parameter values. The model is based on artificial neural network (ANN) approach that the total computational time is in the order of microseconds for the whole quantities in order to get their accurate values. The results are in very good agreement with the previously obtained results from an InGaAs deep QW laser sample.     

Spectral line broadening in quantum wells due to Coulomb interaction of current carriers

A theoretical analysis of emission line broadening due to Coulomb interaction of carriers is performed. An analytical approximation for the spectral line shape function with exponential decays is derived by using the perturbation theory for many-body electron–hole systems for both non-degenerate and degenerate conditions. An explanation of the experimentally observed spectral line asymmetry and the linewidth change as a function of the temperature and the excitation level is given.     

Oscillator strength of type-II light-hole exciton in InxGa1−xAs/GaAs strained single quantum wells

We have investigated the excitonic properties of In_0.15Ga_0.85As/GaAs strained single quantum wells by using photoreflectance spectroscopy and a variational calculation method. We clearly detected the photoreflectance signal of the type-II light-hole exciton, which consists of an electron confined in the InGaAs layer and a light hole located in the thick GaAs layer, in addition to the type-I heavy-hole exciton confined in the InGaAs layer. The calculated results of the overlap integral of the envelope function in the type-II light-hole exciton predict that the oscillator strength is remarkably enhanced with decreasing the InGaAs-layer thickness. This is demonstrated by the layer-thickness dependence of the photoreflectance intensity of the type-II light-hole exciton.     

Decay of electronic excitations in bulk metals and at surfaces

We present a brief survey of the contemporary state of theoretical study of quasiparticles (excited electrons and holes) dynamics in bulk metals and at metal surfaces. Quasiparticle decay mechanisms are discussed in terms of electron-electron (e-e) and electron-phonon (e-ph) interactions. The e-ph decay channel is shown to be important for all materials considered. It is especially important for systems with the thickness of one monolayer. In the e-e decay channel the quasiparticle decay can be realized via one-electron transfer processes, via creation of electron-hole pairs, and via plasmon excitation. In ferromagnetic systems the electron (hole) decay via the Stoner pair excitation or/and magnon excitation is made possible.