迭代法分析圆环类微带行波天线的辐射特性

利用圆环类微带行波天线的辐射功率与等效行波磁流衰减常数之间的自洽关系,导出了计算衰减常数的迭代方程;为加快迭代速度,将辐射积分中的格林函数展开成柱面波函数,得到快速收敛的级数和.最后给出了方向图的计算曲线,与实验结果对比吻合良好,表明此方法模拟圆环类微带行波天线辐射特性的有效性.     

The formation of biaxial nematic phases in binary mixtures of thermotropic liquid-crystals composed of uniaxial molecules

ABSTRACT

Monte Carlo simulations in the isothermal-isobaric ensemble are used to investigate the formation of an ordered, biaxial nematic phase in a binary mixture of thermotropic liquid crystals. The orientational dependence of the interaction between molecules of each pure component is the same as in the well-known Maier-Saupe model; each pure component of the mixture is therefore capable of forming a uniaxial nematic phase. For the interaction between molecules of different components, we use the same Maier-Saupe model but change the sign of the coupling constant. As a consequence a T-shaped arrangement of these molecules is energetically favoured. The formation of the biaxial phase occurs in two steps. At higher temperatures T, one of the components forms a uniaxial nematic phase whereas the other is in a quasi two-dimensional restricted isotropic liquid state. We develop a simple theoretical model to understand the high degree of (ostensible) nematic order in the latter. At lower T, the second component becomes nematic and then the entire mixture of the two compounds has biaxial symmetry. The biaxial nematic phase does not demix into domains rich in molecules of one or the other species.     

低气压条件下氢气潘宁放电的模拟分析

为更好地理解低气压、弱电离条件下潘宁离子源放电过程中离子和电子的动力学行为, 通过建立二维轴对称模型, 采用粒子模拟与蒙特卡罗相结合(PIC/MCC)的方法, 考虑了电子与氢气之间的弹性碰撞、激发、电离以及氢原子、离子之间的弹性碰撞和电荷交换等过程, 对微型氢气潘宁离子源放电和引出过程进行了数值研究. 考察了磁场位形、壁面二次电子发射系数、引出电压和充气压力对放电过程的影响, 得到了实验中难以诊断得到的放电腔内电子与离子数密度分布, 阳极电流、引出极离子电流、单原子氢离子比例和双原子氢离子比例等宏观参数与实验结果相一致. 通过仿真使得对氢气潘宁放电机制的研究从定性过渡到定量, 这对于潘宁离子源的设计和改进具有重要意义. 关键词： 潘宁放电 氢气 粒子模拟 蒙特卡罗     

多失效模式光电系统可靠性建模分析方法北大核心CSCD

系统可靠性建模分析是开展可靠性分配、预计、故障树分析及可靠性优化设计的基础。介绍了一种光电系统可靠性建模分析方法,针对光电系统中部分分系统具有多种失效模式且各失效模式均服从指数分布的特点,依据齐次马尔科夫理论,采用马尔科夫状态转移图方法建立了产品的可靠性模型,并给出解析表达式、数值计算方法和Monte Carlo仿真方法。最后,将其应用于某机载光电系统供电回路的实例分析中。采用两种计算方法及Monte Carlo仿真方法分别进行计算,并将结果进行对比分析,证明了该方法的正确性及可行性。     

氮化硼纳米管阵列储氢的计算机模拟

采用巨正则蒙特卡罗方法模拟常温、中等压强下单壁氮化硼纳米管阵列的物理吸附储氢,重点研究压强、纳米管阵列的管径和管间距对单壁氮化硼纳米管阵列物理吸附储氢的影响.计算结果表明,氮化硼纳米管阵列的储氢性能明显优于碳纳米管阵列,在常温和中等压强下的物理吸附储氢量(质量百分数)可以达到和超过美国能源部提出的商业标准.并给出相应的理论解释.     

241Am-Be中子参考辐射的蒙特卡罗模拟研究

研究用于校准场所中子剂量监测仪表的241Am-Be中子参考辐射场计量特性。采用蒙特卡罗方法模拟了空气自由中子参考辐射(FRNR),GB/T 14055规定的最小尺寸中子参考辐射(SRNR)和实际中子参考辐射(ARNR)中不同检验点处中子周围剂量当量率、散射中子占比和能谱分布特征。研究结果表明,空气对FRNR中的剂量率和能谱分布影响小,近似为理想中子参考辐射;采用5%含硼聚乙烯作屏蔽的最小尺寸SRNR可减少热中子,降低散射中子占比,影锥法不适用于小尺寸中子参考辐射中对散射中子的修正;ARNR中的散射中子更少、占比更低,影锥法所得散射中子占比与理论值基本一致。     

Zur Berechnung von Geometriefaktoren bei der Kernstrahlungsmessung

Der Geometriefaktor von radioaktiven umschlossenen oder offenen Strahlenquellen hängt bei der Messung mittels einer Kernstrahlungsmeßsonde von der räumlichen Anordnung der Strahlenquelle zu der strahlenexponierten wirksamen Fläche des Detektors und von der Geometrie der Strahlenquelle selbst ab. Fūr punktförmige Strahler in verschiedenen Positionen, Geraden, Kreisflächen und Zylinder wurde in möglichst einheitlicher Vorgehensweise die Berechnung der Geometriefaktoren bezüglich kreisförmiger ebener Detektionsflächen vorgenommen und rechentechnisch in Form von BESM 6-Algolprogrammen realisiert. Die Berechnungsergebnisse sind untereinander konsistent und wurden möglichst durch unabhängige Verfahren oder experimentelle Werte kontrolliert. Die Rechengenauigkeit kann gemäß den vorliegenden Anforderungen frei gewählt werden.     

Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET

The energy deposition and electrothermal behavior of SiC metal-oxide-semiconductor field-effect transistor(MOSFET)under heavy ion radiation are investigated based on Monte Carlo method and TCAD numerical simulation.The Monte Carlo simulation results show that the density of heavy ion-induced energy deposition is the largest in the center of the heavy ion track.The time for energy deposition in SiC is on the order of picoseconds.The TCAD is used to simulate the single event burnout(SEB)sensitivity of SiC MOSFET at four representative incident positions and four incident depths.When heavy ions strike vertically from SiC MOSFET source electrode,the SiC MOSFET has the shortest SEB time and the lowest SEB voltage with respect to direct strike from the epitaxial layer,strike from the channel,and strike from the body diode region.High current and strong electric field simultaneously appear in the local area of SiC MOSFET,resulting in excessive power dissipation,further leading to excessive high lattice temperature.The gate-source junction area and the substrate-epitaxial layer junction area are both the regions where the SiC lattice temperature first reaches the SEB critical temperature.In the SEB simulation of SiC MOSFET at different incident depths,when the incident depth does not exceed the device's epitaxial layer,the heavy-ion-induced charge deposition is not enough to make lattice temperature reach the SEB critical temperature.     

Monte Carlo simulations for 20 MV X-ray spectrum reconstruction of a linear induction accelerator

To study the spectrum reconstruction of the 20 MV X-ray generated by the Dragon-I linear induction accelerator, the Monte Carlo method is applied to simulate the attenuations of the X-ray in the attenuators of different thicknesses and thus provide the transmission data. As is known, the spectrum estimation from transmission data is an ill-conditioned problem. The method based on iterative perturbations is employed to derive the X-ray spectra, where initial guesses are used to start the process. This algorithm takes into account not only the minimization of the differences between the measured and the calculated transmissions but also the smoothness feature of the spectrum function. In this work, various filter materials are put to use as the attenuator, and the condition for an accurate and robust solution of the X-ray spectrum calculation is demonstrated. The influences of the scattering photons within different intervals of emergence angle on the X-ray spectrum reconstruction are also analyzed.     

一种用于衍射光元件优化设计的快速算法的研究

讨论了傅里叶迭代算法对初始相位敏感的缺陷机理,提出用伪随机相位编码作为傅里叶迭代算法初始值的改进算法来克服相位敏感缺陷。改进算法具有加快迭代收敛速度、提高恢复图像强度准确性的优点。将该算法产生的任意期望图样的相位全息图写入纯相位液晶空间光调制器上,在远场成功地再现了期望图样。算法迭代10次可产生衍射效率接近85%的一幅相位全息图。作为一种快速相位恢复算法它在相控阵激光雷达以及光束敏捷偏转等领域有重要意义。