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41.
The dendrite growth process of transparent NaBi(WO4)2 with small prandtl and high melting point was studied by using the in-situ observation system. According to the dynamic images and detailed information, there are two kinds of restriction effect on the dendrite growth, the competition between arms and branches and the convection in the melt. The dendrite growth rate was time dependent, and the rate of arm growth reached the maximum 5.8 mm/s in the diffusive-advective region and rapidly decreased in the diffusive-convective region. The growth rate of branch had the same change trends as the arm’s. Based on the EPMA-EDS data of solidification structure of quenched NaBi(WO4)2 melt, it was found that there were component differences from stoichiometric concentration in the melt near the interface during the growth process. Supported by the National Natural Science Foundation of China (Grant No. 50331040) and the Innovation Funds from Shanghai Institute of Ceramics, Chinese Academy of Sciences (Grant No. SCX0623)  相似文献   
42.
Highly ordered composite nanowires with multilayer Ni/Cu and NiFe/Cu have been fabricated by pulsed electrodeposition into nanoporous alumina membrane. The diameter of wires can be easily varied by pore size of alumina, ranging from 30 to 100 nm. The applied potential and the duration of each potential square pulse determine the thickness of the metal layers. The nanowires have been characterized by transmission electron microscopy (TEM), magnetic force microscopy (MFM), and vibrating sample magnetometer (VSM) measurements. The MFM images indicate that every ferromagnetic layer separated by Cu layer was present as single isolated domain-like magnet. This technique has potential use in the measurement and application of magnetic nanodevices.  相似文献   
43.
A method, combining micro-contact printing (μCP), wet chemical etching and reactive ion etching (RIE), is reported to fabricate microstructures on Si and SiOx. Positive and negative structures were generated based on different stamps used for μCP. The reproducibility of the obtained microstructures shows the methodology reported herein could be useful in Micro-Electro-Mechanical Systems (MEMS), optical and biological sensing applications.  相似文献   
44.
The 57Fe Mössbauer technique has been used to investigate the effect of zinc oxide substitution in (25???x)MnO–xZnO–15Fe2O3–60B2O3 glass system (x?=?0, 5, 10, 15 and 20 mol% of ZnO ). Mössbauer absorption spectra for all the samples recorded at room temperature suggest the existence of the two paramagnetic quadrupole doublets. The observed variations in hyperfine parameters have been explained on the basis of cations distribution and exchange interaction at the lattice sites and it is concluded that B–B interaction increases while the metal–metal interaction decreases due to replacement of manganese oxide by zinc oxide. These results suggest that the present glass system exhibits a paramagnetic behaviour that changes towards the weak paramagnetic when manganese oxide was replaced with zinc oxide.  相似文献   
45.
The surface morphology evolution of Ni/W alloys was studied, as a function of the alloy composition. Using the modified plating baths developed in our laboratory recently, electroplated Ni/W alloys with different W content, in the range of 7–67 atom percent (a/o), can be obtained. This was found to lead to different structures, ranging from polycrystalline fcc-Ni type structure to amorphous, followed by orthorhombic with increasing W content in the alloy. Powder XRD was studied to determine the crystal structures. Ex situ STM, AFM and SEM were used to study in detail the surface morphologies of the different alloys, and their evolution with increasing W content.

The important findings are that a mixture of two crystalline forms can give rise to an amorphous structure. Hillocks that are usually a characteristic of epitaxial growth can also exist in the amorphous alloys. Oriented scratches caused by stress can also be formed.

Up to 20 a/o of W is deposited in the alloys in crystalline form, with the fcc-Ni type structure. Between 20 and about 40 a/o an amorphous structure is observed, and above that an orthorhombic crystal structure is seen, which is characteristic of the NiW binary alloy. Careful choice of the composition of the plating bath allowed us to deposit an alloy containing 67 a/o W, which corresponds to the composition NiW2.  相似文献   

46.
TiO2 thin films were prepared under various conditions by using a reactive RF sputtering technique. The structural, optical and electrical characteristics of the films have been investigated. All as-deposited films were amorphous. After annealing at T > 673 K, the crystallinity of the observed tetragonal anatase phase appeared improved. The optical band gap, determined by using Tauc plot, has been found to amount to 3.38 ± 0.03 and 3.21 ± 0.03 eV for the direct and indirect transition, respectively. Also the complex optical constants for the wavelength range 300-2500 nm are reported. Using the two-point probe technique, the dark resistivity has been measured as a function of the film thickness, d. The resistivity, ρ, of the samples has been found to decrease markedly with increasing thickness, but only for d < 100 nm. The behaviour of ρd versus d was found to fit properly with the Fuchs and Sondheimer relation with parameters ρo = 4.95 × 106 Ω cm and mean free path, l = 310 ± 2 nm. The log ρ versus 1/T curves show three distinct regions with values for the activation energy of 0.03 ± 0.01, 0.17 ± 0.01 and 0.50 ± 0.02 eV, respectively.  相似文献   
47.
赵毅  万星拱 《物理学报》2006,55(6):3003-3006
用斜坡电压法(Voltage Ramp, V-ramp)评价了0.18μm双栅极 CMOS工艺栅极氧化膜击穿电量(Charge to Breakdown, Qbd)和击穿电压(Voltage to Breakdown, Vbd). 研究结果表明,低压器件(1.8V)的栅极氧化膜(薄氧)p型衬底MOS电容和N型衬底电容的击穿电量值相差较小,而高压器件(3.3V)栅极氧化膜(厚氧)p衬底MOS电容和n衬底MOS电容的击穿电量值相差较大,击穿电压测试值也发现与击穿电量 关键词: 薄氧 可靠性 击穿电压 击穿电量  相似文献   
48.
Indium tin oxide (ITO) thin films were deposited on cyclic olefin copolymer substrate at room temperature by an inverse target sputtering system. The crystal structure and the surface morphology of the deposited ITO films were examined by X-ray diffraction and atomic force microscopy, separately. The electrical properties of the conductive films were explored by four-point probing. Visible spectrometer was used to measure the optical properties of ITO-coated films. The performance of the flexible organic light emitting diode device with different thickness anode was investigated in this study.  相似文献   
49.
For low-temperature deposition of oxide films relating to Bi-Sr-Ca-Cu-O superconductors, photo-absorption and -decomposition properties were examined with respect to copper and alkaline-earth ß-diketonates. It was confirmed that all ß-diketonates examined were promising as source materials for photochemical vapour deposition (photo-CVD) using a low-pressure mercury lamp, in view of their large light absorption coefficients at wavelength 254 nm. The light irradiation was effective for the formation of highly crystalline oxide films at temperatures below 600 °C. By combining two sources, Ca2CuO3 and SrCuO2 films were prepared. Photo-CVD of c-axis oriented Bi2Sr2CuOx film was achieved by the irradiation of ternary sources of Bi(C6H5)3 and strontium and copper ß-diketonates at 500 °C.  相似文献   
50.
The physical mixtures of hydroxocarbonates of Cu and Ni with aluminium were activated using a laboratory planetary mill. The chemical reactions and alloy formations as the effects of grinding were followed by the phase analysis of solid products based on the thermogravimetry and X-ray diffractometry. Experimental evidence indicates that the nature of reactions and products of mechanical activation was dependent on the amount of aluminium and time of grinding. This revised version was published online in July 2006 with corrections to the Cover Date.  相似文献   
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