Impulse coupling in laser-driven microtargets

We have studied about the thrust imparted to targets of different materials by pulsed TEA CO₂ laser and chopped CW CO₂ laser in air and its dependence on different parameters such as laser intensity and pulse duration. We estimated the impulse-coupling coefficient and compared it with the published results. The mechanism of generation of thrust by laser incident on targets in air is, in effect, combination of those involved in laser ablation in vacuum and laser-induced air detonation.     

Diode-laser measurements and calculations of H2-broadening coefficients in the ν3 band of CH3D

Using a tunable diode-laser spectrometer, we have measured at room temperature the H₂-broadening coefficients of for 36 lines belonging to QP and QR branches in the ν₃ parallel band. The recorded lines with J values ranging from 1 to 15 and K from 0 to 9 (K?J) are located between 1196 and 1412 cm⁻¹. The H₂-broadening coefficients were determined by fitting each spectral line with Voigt, Rautian, and Galatry profiles. They were also calculated on the basis of a semiclassical model of interacting linear molecules performed by considering in addition to the weak electrostatic contributions the atom-atom Lennard-Jones potential. The theoretical results are in reasonable agreement with the experimental data, except for high J transitions where they are overestimated and for K approaching or equal to J with J?3 where they are underestimated. The latter discrepancy may be caused by the assumption to consider only ΔK=0 collision-induced transitions, associated with |ΔJ| transitions up to 4.     

Spectral‐Luminescence and Generation Properties of 1‐Aza‐2‐Methyl‐6‐Aminopyrene and of Its Protolytic Forms

Spectral manifestations of protolytic forms of 1aza2methyl6aminopyrene in ethanol and aqueous solutions are investigated. The ionization constants of the protolytic forms are determined. The generation properties and photostability of a neutral molecule and a cation in excitation by an excimer XeCl laser are studied.     

Tunable subnanosecond laser pulse generation using an active mirror concept

We report (theory, experimental check) an improved approach for generation of a tunable, subnanosecond pulse (0.1–0.4 ns), based on a single pulsation (“spike”) separation from the transient oscillations in a dye laser with active mirror (AMIR). A pumping by 20–50 ns pulses from Q-switched Nd:YAG laser is considered. The separation is in original, two-spectral selective channels cavity, where the forced by AMIR quenched generation at one of the wavelength stops initially started spiking generation at the other wavelength after the first spike development. The AMIR quickly starts the quenching generation at a precisely controlled moment and with necessary intensity thus assuring the desired separation. An advantage is a high reproducibility of the separation for high (~250%) pump power fluctuations combined with tuning in large range (~20 nm). To obtain such an operation we form ~1 ns leading front pump pulse by electrooptical temporal cutting of the input pump pulse and use an optical delay line. This increases also a few times the power in the separated spike (to be ~100 kW). Our approach widens the combinations of lasers for effective applications of spike separation technique (dye lasers excited by Q-switched solid-state or Cu-vapor lasers).     

Influences of the Current Transverse Profile on the Transverse Mode Competition of VCSELs Diodes

A spatially independent model of vertical-cavity surface-emitting lasers (VCSELs) is derived by integrating the spatially dependent rate equations over the cross section of the cavity of a VCSEL. The angular and radial non-uniformities of the injection current are taken into account. The well-known LP modes of a weakly-guiding cylindrical waveguide are employed to describe the transverse modal structure in the VCSEL cavity. This model is solved in a self-consistent way by using the 4th order Runge-Kutta method. The dependence of transverse mode competition on the current intensity, the angular and radial non-uniformities of the injection current, and the geometrical parameters of the electrical contact are thoroughly investigated and analyzed. The results are useful to the optimum design of the optical transverse modal structure of VCSELs.     

Combination of two basic types of synchronization in a coupled semiconductor laser system

Combination of two basic types of synchronization, anticipatory synchronization and lagged synchronization, is investigated numerically between two coupled semiconductor lasers. It is found that lagged synchronization produced by a backward coupling with a suitable delay can combine with the originally hidden anticipatory synchronization and produce a type of synchronization overcoming the original lagged synchronization produced by a forward coupling. We study the combination synchronization phenomenon when the delay of the backward coupling is different from that of the original anticipatory synchronization. Our results suggest that the synchronization combination phenomenon might allow an interpretation of an experimental observation by Sivaprakasam et al. [Phys. Rev. Lett. 87, 154101 (2001)] that the anticipating time is irrespective of the external-cavity round trip time, which to date remains to be understood.     

How exact are simplified scalar approaches to optical fields in oxide-confined stripe-geometry diode lasers?

Optical model, scalar or vectorial one, describing behaviour of an optical field within a diode-laser cavity, is one of the most important parts of modelling of a diode-laser operation. As compared to more accurate vectorial optical approaches, scalar ones are known to be less exact but simultaneously they need much less computation time. Besides, they have been sometimes found to be surprisingly exact even beyond their confirmed range of validity. Therefore, in this paper, real validity limits of their application have been determined by comparing their simplified results with more exact results obtained with the aid of vectorial models. The analysis comprises a comparison of an application of the most popular scalar approach to optical properties of diode lasers, i.e., the effective index method, and the vectorial method of lines for the standard 1.3-μm GaAs-based stripe-geometry diode laser. The scalar model has been found to be quite exact in the case of a determination of the effective refractive index, i.e., the wavelength of emitted radiation, whereas its exactness in the lasing threshold analysis is much worse, especially in the case of higher-order modes. Our analysis is concluded with a determination of the regions where both models give satisfactorily close results.     

Injection locked multi-section gain-coupled dual mode DFB laser for terahertz generation

A dual mode multi-section gain-coupled distributed feedback laser with tunable mode spacing is subharmonically injection locked at 0.315 THz. The injected signal consists of an optical comb with harmonics 35 GHz apart and a bandwidth of approximately 1.9 THz. The optical comb is a result of strong four-wave mixing in a highly-nonlinear dispersion-shifted fiber. In order to observe locking of the multi-section laser, the output is optically downconverted to RF frequencies using the same optical comb. The locked multi-section DFB laser is a coherent and tunable optical source suitable for continuous-wave terahertz generation systems.     

22 dB all-fiber green amplifier using Er-doped fluoride fiber

We demonstrate a 22 dB all-fiber amplifier at 546 nm using Er³⁺-doped fluoride fiber by forward upconversion pumping of a 974 nm laser diode. The gain saturation effects and the power conversion efficiency of this amplifier are investigated in detail based on gain characteristics and numerical simulations.     

Optimization of facet coating for highly strained InGaAs quantum well lasers operating at 1200 nm

The optical output power of a laser diode can be enhanced by anti-reflection (AR) and high-reflection (HR) facet coatings, respectively, at the front and back facet. AR and HR coatings also serve the purpose of protection and passivation of laser diode facets. In this work, we have designed and optimized a single layer λ/4 thick Al₂O₃ film for the AR coating and a stack of λ/4 thick Al₂O₃/λ/4 thick Si bi-layers for the HR coating for highly strained InGaAs quantum-well edge emitting broad area (BA) laser diodes. Effect of the front and back facet reflectivities on output power of the laser diodes has been studied. The light output versus injected current (L–I characteristics) measurements were carried out on selected devices before and after the facet coatings. We have also carried out the numerical simulation and analysis of L–I characteristics for this particular diode structure. The experimental results have been compared and verified with the numerical simulation.