ELDRS and dose-rate dependence of vertical NPN transistor

The enhanced low-dose-rate sensitivity (ELDRS) and dose-rate dependence of vertical NPN transistors are investigated in this article.The results show that the vertical NPN transistors exhibit more degradation at low dose rate,and that this degradation is attributed to the increase on base current.The oxide trapped positive charge near the SiO2-Si interface and interface traps at the interface can contribute to the increase on base current and the two-stage hydrogen mechanism associated with space charge effect can well explain the experimental results.     

嵌入到Fabry-Perot谐振腔的双晶约瑟夫森结阵列的阻抗匹配和相位锁定研究

在He等人所做的嵌入到Fabry-Perot谐振腔中约瑟夫森结阵列的微波辐照研究基础上,提出了同时实现约瑟夫森结阵列阻抗匹配和相位锁定的方法,进行了相关的电磁仿真和数值计算.双晶约瑟夫森结阵列被制作在YSZ双晶基片上,同时被嵌入到Fabry-Perot谐振腔内.通过在基片上制作与结阵列集成的串联馈电半波偶极天线阵,并对其结构进行优化实现了结与天线的匹配,数值计算表明结的辐射效率达到94%;利用天线阵辐射场的特征和对模型合理的设计,使Fabry-Perot谐振腔和基片同时谐振在合适的模式下,从而使结阵列与谐 关键词： 约瑟夫森结阵列 阻抗匹配 相位锁定 Fabry-Perot谐振腔     

Effect of graded triple delta-doped sheets on the performance of GaAs based dual channel pseudomorphic high electron mobility transistors

The characteristics of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors (DCPHEMTs) with different graded triple delta-doped sheets are investigated and experimentally demonstrated. Based on a two-dimensional simulator of ATLAS, the band diagrams, electron densities and DC characteristics of studied devices are comprehensively analyzed. Due to the use of properly graded triple delta-doped sheets, good pinch-off and saturation characteristics, improved transport properties and wide current swing are obtained. For comparison, a practical DCPHEMT with good device performances is fabricated as well. It is found that the simulated data are in good agreement with experimental results.     

Effect of thermal-annealing on the magnetoresistance of manganite-based junctions

Thermal-annealing has been widely used in modulating the oxygen content of manganites. In this work, we have studied the effect of annealing on the transport properties and magnetoresistance of junctions composed of a La0.9Ca0.1MnO3＋6 film and a Nb-doped SrTiO3 substrate. We have demonstrated that the magnetoresistance of junctions is strongly dependent on the annealing conditions： Prom the junction annealed-in-air to the junction annealedin-vacuum, the magnetoresistance near 0-V bias can vary from ～-60% to N～0. A possible mechanism accounting for this phenomenon is discussed.     

Can triple bonds exist between gold and main-group elements?

Pseudopotential ab initio calculations of several gold carbides, gold nitrides and their third-row analogues have been performed with the goal of finding species which contain triple bonds with gold. Multiple-bond character has been observed for Cl₂AuCH and Cl₂AuN. Bonding in these and related compounds is analysed and the reasons why gold prefers single bonds are outlined. Received: 8 September 1997 / Accepted: 11 December 1997     

Tunneling magnetoresistance of the double spin-filter junctions at nonzero bias

A recent theoretical estimation indicated that the NM/FI/FI/NM double spin-filter junction (DSFJ, here the NM and FI represent the nonmagnetic electrode and the ferromagnetic insulator (semiconductor) spacer, respectively) could have very high tunneling magnetoresistance (TMR) at zero bias. To meet the requirement in research and application of the magnetoresistance devices, we have calculated the dependences of tunneling magnetoresistance of DSFJ on the bias (voltage), the thicknesses of ferromagnetic insulators (semiconductors) and the average barrier height. Our results show that except its very high value, the TMR of DSFJ does not decrease monotonously and rapidly with rising bias, but increase slowly at first and decrease then after having reached a maximum value. This feature is in distinct contrast to the ordinary magnetic tunnel junction FM/NI/FM (FM and NI denote the ferromagnetic electrode and the nonmagnetic insulator (semiconductor) spacer, respectively), and is of benefit to the use of DSFJ as a magnetoresistance device.     

Pseudoreceptor model for ryanodine derivatives at calcium release channels

This paper describes the generation of a pseudoreceptor model for ryanodine receptor (RyR) modulating ryanoids in rabbit skeletal muscle. For this purpose, the molecular modelling software PrGen was applied to correlate experimentally determined and calculated free energies of binding for a set of 15 ryanodine derivatives. The final model indicates a narrow cleft with hydrogen bond donor and acceptor capacities (represented by an Asn) as most crucial for binding the pyrrole carboxylate substituent at C3 of ryanodine. In addition, hydrophobic residues flank the aromatic pyrrole ring (Tyr, Phe, and Ile). Two of those residues (Tyr and Ile) interact with the 2-isopropyl moiety, which seems to contribute to binding. Opposite to the pyrrole locus, a second hydrophobic region (represented by a Leu) restricts ryanodine derivatives in their longitudinal axis and leads to the discrimination of equatorial and axial positioned methyl groups and of polar substituents at C9. Finally, a charged glutamate residue generates strong hydrogen bonding and electrostatic interactions with the hydroxyl groups at C10 and C15. For this binding-site model – composed of six amino acid residues – a correlation for the training set ligands of R = 0.99 (Q² = 0.975) and a root mean square (rms) deviation of 0.568 kcal/mol for the prediction of the binding energies of four test set ligands was obtained. Based on this pseudoreceptor model the putative topology of the real binding site of ryanoids will be discussed.     

一种研究自旋翻转散射效应的新方法

金属中自旋翻转散射长度远长于电子平均自由程，近来关于自旋翻转散射效应的研究主要集中于扩散区域．文章作者提出了一种使用双势垒磁性隧道结来研究纳米尺度结构中弹道区域的自旋翻转散射效应的新方法．这种方法可以从磁电输运性质的测量，得出中间隔离层中的自旋翻转散射效应的温度和偏压关系，进一步可以得出诸如电子平均自由程和自旋翻转散射长度等自旋散射信息，以及中间层的态密度和量子阱信息．     

Structural characterizations of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by transmission electron microscopy

We have investigated the structure of Co₂MnSi/MgO/Co₂MnSi magnetic tunneling junctions with different tunnel magnetoresistance values depending on the in situ annealing temperatures just after the deposition of the upper Co₂MnSi electrodes. The nano-beam diffraction patterns indicated that the degree of order of the upper Co₂MnSi electrode annealed at 550 °C was higher than that of an electrode annealed at 400 °C. Moreover, the degree of the L2₁ order of the upper Co₂MnSi electrode annealed at 550 °C was even lower than that of the lower Co₂MnSi electrode annealed at an almost equal temperature of 600 °C. Atomic-scale observation using a high-angle annular dark-field (HAADF) method distinctly showed the existence of the L2₁-ordered regions in the B2-ordered matrix in the upper Co₂MnSi electrode annealed at 400 °C.