High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.     

温度和电流对白光LED发光效率的影响

对大功率白光LED发光效率进行了研究,得出温度和电流对LED发光效率的影响:随着温度的升高,势阱中辐射复合几率降低,从而降低了发光效率;电流的升高,使更多的非平衡载流子穿过势垒,降低了发光效率。LED工作时,过高的工作温度或者过大的工作电流都会产生明显的光衰:如果LED工作温度超过芯片的承载温度,这将会使LED的发光效率快速降低,产生明显的光衰,并且对LED造成永久性破坏;如果LED的工作电流超过芯片的饱和电流,也会使LED发光效率快速降低,产生明显的光衰。并且LED所能承载的温度与饱和电流有一定关系,散热良好的装置可以使LED工作温度相对降低些,饱和电流也可以更大,LED也就可以在相对较大的电流下工作。     

Efficient top-emitting white organic light emitting device with an extremely stable chromaticity and viewing-angle

In this paper,we report on the fabrication of a top-emitting electrophosphorescent p-i-n white organic lightemitting diode on the basis of a low-reflectivity Sm/Ag semi-transparent cathode together with a thickness-optimized ZnS out-coupling layer.With a 24-nm out-coupling layer,the reflectivity of the cathode is reduced to 8% at 492 nm and the mean reflectivity is 24% in the visible area.By introducing an efficient electron blocking layer tris(1phenylpyrazolato,N,C2 ’)iridium(III)(Ir(ppz) 3) to confine the exciton recombination area,the current efficiency and the colour stability of the device are effectively improved.A white emission with the Ir(ppz) 3 layer exhibits a maximum current efficiency of 9.8 cd/A at 8 V,and the Commission Internationale de L’Eclairage(CIE) chromaticity coordinates are almost constant during a large voltage change of 6 V-11 V.There is almost no viewing angular dependence in the spectrum when the viewing angle is no more than 45,with a CIE x,y coordinate variation of only(±0.0025,±0.0008).Even at a large viewing angle(75),the CIE x,y coordinate change is as small as(±0.0087,±0.0013).     

2(1/2)维等离子体粒子模拟分布式并行程序设计

设计了两种粒子模拟的并行算法,并对其进行了比较,基于消息传递环境开发2(1/2)维粒子模拟并行程序,测试并分析了并行性能.粒子模拟算法中,给出了一个初始化粒子三维Maxwell速度分布的算法,并对常用的电磁场的Lindman吸收边界作了推广.最后对激光钻孔问题作了粒子模拟计算,验证了该并行程序.     

Short Tm3+-doped fiber lasers with watt-level output near 2 μm

High-power operation of diode-pumped fiber lasers at wavelength near 2μm are demonstrated with short length of heavily Tm3 -doped silica glass fibers. With 7-cm long fiber, a laser at near 2 μm is obtained with the threshold of 135 mW, maximum output power of 1.09 W, and slope efficiency of 9.6% with respect to the launched power from a laser diode at 790 nm. The output stability of this fiber laser is within 5%.The dependence of the performance of fiber lasers on the operation temperature and cavity configuration parameters is also investigated.     

有机电致发光器件量子效率测量系统的建立及其应用研究

有机电致发光器件（OLED）的量子效率是衡量器件发光性能的一个非常重要的参数，考虑到提高OLED量子效应的基本前提是能精确测得器件的量子效率。本文工作采用美国Keithley公司的系列产品，设计与组建了一套精确测量OLED量子效率的测量系统（主要由真空系统和测试系统组成）。应用本系统测量时，由测量软件通过数据采集卡来实时地对K－2400（稳压源）和K－485（微检流计）进行控制，得到流经器件的电流和器件输的光电流，再经过换算得出注入器件的电子数和从器件输出的光子数，从而能够得到器件的量子效率值，最后由计算机动态地绘制出器件的性能曲线。此外，我们还利用本测量系统对以MEH－PPV为基质的橙红色OLED进行测量，该测试样品在0.0117A/cm^2的电流密度下，测量量子效率为0．39％。     

一种新型径向三腔同轴虚阴极振荡器全三维粒子模拟研究

提出了一种新型径向三腔同轴虚阴极振荡器,并进行了数值模拟研究. 研究表明: 这种径向三腔结构在束波转换面进行电场调制,能够大幅提高束波转换效率;同时,由阳极栅网和径向三腔结构构成的谐振装置能有效地抑制模式竞争;另外,由于采用了同轴引出结构,在提高能量引出的同时还能有效吸收漂移管中被利用过的电子,因此这种新型虚阴极振荡器能够获得较高的输出功率. 模拟的电子束电压为400 kV,电流为50 kA,主频为4.5 GHz,峰值功率达到6 GW,平均输出功率为3.1 GW,束波转换效率达到15%. 关键词： 高功率微波 同轴虚阴极振荡器 粒子模拟 束波转换效率     

Improvement of characteristics of an InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer

The optical and physical properties of an InGaN light-emitting diode (LED) with a specific design of a staggered AlGaN electron-blocking layer (EBL) are investigated numerically in detail. The electrostatic field distribution, energy band, carrier concentration, electroluminescence (EL) intensity, internal quantum efficiency (IQE), and the output power are simulated. The results reveal that this specific design has a remarkable improvement in optical performance compared with the design of a conventional LED. The lower electron leakage current, higher hole injection efficiency, and consequently mitigated efficiency droop are achieved. The significant decrease of electrostatic field at the interface between the last barrier and the EBL of the LED could be one of the main reasons for these improvements.     

阳极界面修饰对钙钛矿太阳能电池性能的影响

采用在聚(3,4-乙撑二氧噻吩)∶聚苯乙烯磺酸(Poly(3,4-ethylenedioxythiophene)∶Poly(styrenesulfonate),PEDOT∶PSS)阳极界面层上直接旋涂二甲基亚砜(Dimethyl Sulfoxide,DMSO)的方法,对PEDOT∶PSS薄膜进行修饰,以提高所制得的钙钛矿太阳能电池器件性能.在5000rpm转速条件下旋涂DMSO后,器件的能量转换效率达到11.43%,与PEDOT∶PSS阳极界面层未做任何修饰的器件相比,效率提高了29.15%.测试表征了修饰前后PEDOT∶PSS薄膜的透光性、表面形貌、电导率、器件的外量子效率曲线以及器件在光照和暗态下的J-V特性曲线,分析了器件性能提高的原因.结果表明:经过修饰的PEDOT∶PSS薄膜导电性显著增强,从而更加有利于器件阳极对空穴的抽取和收集;较未修饰时,器件的短路电流密度得到了大幅度提升,进而使得器件获得更高的能量转换效率.     

Cu等离子体X射线脉冲光源

介绍了１．０６μｍ激光加热Ｃｕ靶发射的１．２ｋｅＶ能区Ｘ射线转换效率和强度的测量方法和实验结果。结果表明，Ｃｕ等离子体是一种在１．２ｋｅＶ能区的ｘ射线强脉冲光源。