Partial-SOI high voltage P-channel LDMOS with interface accumulation holes

A new partial SOI (silion-on-insulator) (PSOI) high voltage P-channel LDMOS (lateral double-diffused metal-oxide semiconductor) with an interface hole islands (HI) layer is proposed and its breakdown characteristics are investigated theoretically. A high concentration of charges accumulate on the interface, whose density changes with the negative drain voltage, which increase the electric field (E_I) in the dielectric buried oxide layer (BOX) and modulate the electric field in drift region . This results in the enhancement of the breakdown voltage (BV). The values of E_I and BV of an HI PSOI with a 2-μm thick SOI layer over a 1-μm thick buried layer are 580V/μm and -582 V, respectively, compared with 81.5 V/μm and -123 V of a conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect (SHE). Moreover, in comparison with the conventional device, the proposed device exhibits low on-resistance.     

Slow electron acoustic double layer (SEADL) structures in bi-ion plasma with trapped electrons

The properties of ion acoustic double layer (IADL) structures in bi-ion plasma with electron trapping are investigated by using the quasi-potential analysis. The κ-distributed trapped electrons number density expression is truncated to some finite order of the electrostatic potential. By utilizing the reductive perturbation method, a modified Schamel equation which describes the evolution of the slow electron acoustic double layer (SEADL) with the modified speed due to the presence of bi-ion species is investigated. The Sagdeev-like potential has been derived which accounts for the effect of the electron trapping and superthermality in a bi-ion plasma. It is found that the superthermality index, the trapping efficiency of electrons, and ion to electron temperature ratio are the inhibiting parameters for the amplitude of the slow electron acoustic double layers (SEADLs). However, the enhanced population of the cold ions is found to play a supportive role for the low frequency DLs in bi-ion plasmas. The illustrations have been presented with the help of the bi-ion plasma parameters in the Earth's ionosphere F-region.     

Minimally corrected partial atomic charges for non-covalent electrostatic interactions

We develop a new scheme for determining molecular partial atomic charges (PACs) with external electrostatic potential (ESP) closely mimicking that of the molecule. The PACs are the ‘minimal corrections’ to a reference set of PACs necessary for reproducing exactly the tensor components of the Cartesian zero-, first- and second- molecular electrostatic multipoles. We evaluate the quality of ESP reproduction when ‘minimally correcting’ (MC) Mulliken, Hirshfeld or iterative-Hirshfeld reference PACs. In all these cases, the MC-PACs significantly improve the ESP while preserving the reference PACs’ invariance under the molecular symmetry operations. When iterative-Hirshfeld PACs are used as reference, the MC-PACs yield ESPs of comparable quality to those of the ChElPG charge fitting method.     

Studies on convergence and scaling law of Thomson backscattering spectra in strong fields

With the saddle point analysis method for the Bessel function structure and property, the convergence problem and the scaling laws of Thomson backscattering spectra are solved and studied in both cases that are for the plane wave laser field without and with applied external constant magnetic field. Some unclear points appeared in previous work are clarified. The extension of the method to a general situation for the laser field with an arbitrary polarization is discussed. We also make a simple analysis and discussion about the optimal spectra dependence of field parameters and its implication to practical applications.     

采用瞬态电致发光研究磷光掺杂体系发光瞬时过冲的发射机理

掺杂型有机电致发光器件中载流子累积、载流子复合等物理过程的深入了解对提高器件效率和稳定性有重要作用。通过瞬态电致发光测量可以研究掺杂型有机电致发光器件内部载流子累积。对结构为: ITO/NPB(30 nm)/host: Ir(ppy)₃/BCP(10 nm)/Alq₃(20 nm)/LiF(0.7 nm)/Al(100 nm)的器件分别研究主体材料以及客体掺杂浓度变化对有机掺杂型器件瞬态发光行为的影响。实验发现,当单脉冲驱动电压关闭后,只有TAZ: Ir(ppy)₃掺杂器件出现发光瞬时过冲现象,即发光强度衰减到一定时间时突然增强;且随着客体掺杂浓度的增加,瞬时过冲强度逐渐增强。通过分析TAZ: Ir(ppy)₃掺杂器件的瞬时过冲强度对主体材料与掺杂浓度的依赖关系,进一步发现,瞬时过冲效应强度主要受限于发光层内部积累的电子载流子;TAZ: Ir(ppy)₃发光层内电子容易被客体材料分子俘获并积累,电场突变时陷阱电子容易跳跃到主体材料上并与主体材料上积累的空穴形成激子,激子能量传递到客体材料上并复合发光继而出现发光强度的瞬时过冲现象。研究发光瞬时过冲行为可探究器件发光层内的载流子和激子的动态行为,有利于指导器件的设计,从而减少积累电荷的影响,提高器件的性能。     

Aging effect in the BESIII drift chamber

As the main tracking detector of BESIII, the drift chamber provides accurate measurements of the position and the momentum of the charged particles produced in e+e-collisions at BEPCII. After six years of operation, the drift chamber is suffering from aging problems due to huge beam-related background. The gains of the cells in the first ten layers show an obvious decrease, reaching a maximum decrease of about 29% for the first layer cells. Two calculation methods for the gain change(Bhabha events and accumulated charges with 0.3% aging ratio for inner chamber cells) give almost the same results. For the Malter effect encountered by the inner drift chamber in January 2012, about 0.2% water vapor was added to the MDC gas mixture to solve this cathode aging problem.These results provide an important reference for MDC operating high voltage settings and the upgrade of the inner drift chamber.     

Effect of Ga and As vacancies on electronic properties of Ga0.9375Al0.0625As

Electronic properties of Ga_0.9375Al_0.0625As with Ga and As monovacancies are investigated with the density functional theory. A perfect GaAlAs, which specifically produces a radiation wavelength of ～825.6 nm, has been determined in terms of size and number of atoms of substances. We have introduced eight types of vacancies depending on the distance from the Al atom to the vacancy to obtain the changes in charges, band structures, density of states, and optical conductivity. We found that the Fermi level enters into the valence band due to the formations of the Ga or As vacancies so that the vacant materials may show the characteristics of the p-type semiconductor. Interestingly, Ga-vacancy systems make direct band gaps, which are still good for the use in a semiconductor laser. But, As-vacancy systems, where the indirect gaps appear, are not feasible for the same application. It has been found that the latter phenomenon is induced by a newly formed density of state, which comes from the overlapping of hybridised 4s and 4p orbitals of Ga atoms around As vacancy.     

Trapped modes due to narrow cracks in thin simply-supported elastic plates

We consider an elastic plate of infinite length and constant width supported simply along its two parallel edges and having a finite length crack along its centreline. In particular, we look for and find trapped modes (localised oscillations) in the presence of the crack. An explicit wide-spacing approximation based on the Wiener–Hopf technique applied to incident wave scattering by semi-infinite cracks is complemented by an exact formulation of the problem in the form of integro-differential equations. An application of a Galerkin method for the numerical calculation of results from the latter method leads to a novel explicit ‘small-spacing’ approximation. In combination with the wide-spacing results this is shown to provide accurate results for all lengths of crack.     

Effect of nozzle thickness on the self-excited impinging planar jet

The self-excited oscillation of a large aspect ratio planar jet impinging on a flat plate is investigated experimentally at a single transonic jet velocity to clarify the effect of varying the jet thickness on pattern of jet oscillation and frequency of resulting acoustic tone. The study has been performed for a series of jet thicknesses, 1 mm to 4 mm, each of which is tested for the complete range of plate position, i.e. impingement distance, over which acoustic tones are generated. The results reveal that the jet oscillation is controlled by a fluid-dynamic mechanism for small impingement distances, where the hydrodynamic flow instability controls the jet oscillation without any coupling with local acoustic resonances. At larger impingement distances, a fluid-resonant mechanism becomes dominant, in which one of the various hydrodynamic modes of the jet couples with one of the resonant acoustic modes occurring between the jet nozzle and the impingement plate. Within the fluid-resonant regime, the acoustic tones are found to be controlled by the impingement distance, which is the length scale of the acoustic mode, with the jet thickness having only minor effects on the tone frequency. Flow visualization images of the jet oscillation pattern at a constant impingement distance show that the oscillation occurs at the same hydrodynamic mode of the jet despite a four-fold increase in its thickness. Finally, a feedback model has been developed to predict the frequency of acoustic tones, and has been found to yield reasonable predictions over the tested range of impingement distance and nozzle thickness.