碘化1-甲基-2-异丙基(或丙基)-3-苯磺酰基咪唑啉的合成及基团转移反应

合成了新的四氢叶酸辅酶(THF)模型化合物碘化1-甲基-2-异丙基-3-苯磺酰基咪唑啉(5a)和碘化1-甲基-2-丙基-3-苯磺酰基咪唑啉(5b),研究了其反应性能.结果表明,化合物5与双官能团亲核体邻苯二胺或邻氨基苯酚反应,完全转移了4个碳的异丁基和正丁基单元,基于此探索了合成2-取代苯并咪唑及2-取代苯并唑的新方法;化合物5a与单官能团亲核体胺类反应部分转移了4个碳的异丁基单元,生成不同基团取代的N,N,N'-三取代乙二胺盐;化合物5a在Na BH4作用下可发生还原反应,在Na OH水溶液中可发生水解反应,也可与碳负离子基团(硝基甲基负离子或二腈基甲基负离子)发生亲核加成反应,生成了3类不同基团取代的N,N,N'-三取代乙二胺衍生物,探索了此类化合物的简易合成方法.这些反应模拟了四氢叶酸辅酶在生物体内转移一碳单元的功能,并将其扩展到4个碳原子单元,获得了可应用于有机合成的新方法和新试剂.     

Anion Sensing through Redox-Modulated Fluorescent Halogen Bonding and Hydrogen Bonding Hosts**

Anion sensing via either optical or electrochemical readouts has separately received enormous attention, however, a judicious combination of the advantages of both modalities remains unexplored. Toward this goal, we herein disclose a series of novel, redox-active, fluorescent, halogen bonding (XB) and hydrogen bonding (HB) BODIPY-based anion sensors, wherein the introduction of a ferrocene motif induces remarkable changes in the fluorescence response. Extensive fluorescence anion titration, lifetime and electrochemical studies reveal anion binding-induced emission modulation through intramolecular photoinduced electron transfer (PET), the magnitude of which is dependent on the nature of both the XB/HB donor and anion. Impressively, the XB sensor outperformed its HB congener in terms of anion binding strength and fluorescence switching magnitude, displaying significant fluorescence turn-OFF upon anion binding. In contrast, redox-inactive control receptors display a turn-ON response, highlighting the pronounced impact of the introduction of the redox-active ferrocene on the optical sensing performance. Additionally, the redox-active ferrocene motif also serves as an electrochemical reporter group, enabling voltammetric anion sensing in competitive solvents. The combined advantages of both sensing modalities were further exploited in a novel, proof-of-principle, fluorescence spectroelectrochemical anion sensing approach, enabling simultaneous and sensitive read out of optical and electrochemical responses in multiple oxidation states and at very low receptor concentration.     

可迁移的土壤重金属污染高光谱定性分类方法研究

现有基于高光谱遥感的土壤重金属污染定性分类模型,大多采用同一地区室内光谱测定训练样本数据进行模型构建与测试。但室内光谱测定需要复杂的处理过程,成本高,效率低,且无法快速获得目标区域空间上连续的光谱信息。考虑到实际应用需求,模型在相同实验区和不同试验区野外光谱数据是否具有较好的迁移推广能力是目前迫切需要回答的问题。为回答这一问题,选取湖南省郴州市和衡阳市两铅锌矿区作为实验研究区,选用支持向量机（SVM）作为分类器,将郴州实验区室内采样的83个样本数据和衡阳实验区室内采样的46个样本数据分别用于分类器训练,将衡阳地区野外采样的46个样本数据用于分类测试。并首先通过基于联合分布适配（JDA）的迁移学习方法进行光谱变换以缩小两地室内外测定光谱分布差异,然后进行不同区域室内外土壤重金属污染定性分类模型迁移。实验结果表明：（1）由于野外测得的光谱数据会受到太阳辐射、提取的土壤成分差异等因素的干扰导致室内外光谱数据存在显著的分布差异,难以直接将基于室内采样数据训练得到的土壤重金属污染定性分类模型迁移到同一地区测定的野外高光谱数据上。但通过JDA变换缩小室内外分布差异后,模型迁移能力得到显著提升,砷（As）、铅（Pb）和锌（Zn）三种重金属含量是否超标的分类精度都达到了84%以上,Zn元素含量是否超标的分类精度甚至达到了89%以上。（2）由于季节性影响、地区成分的干扰和光谱噪声的增加,不同地区光谱数据存在着更为显著的分布差异,加大了不同地区土壤重金属污染监测的难度,难以将基于室内采样光谱数据所建立的土壤重金属定性分类模型直接迁移到其他地区野外采样数据上（平均分类精度仅在50%左右）。经过JDA迁移学习方法进行室内外光谱变换处理后,模型迁移能力得到保证,因此,室外光谱采样可直接用于研究不同试验区域重金属（As,Pb和Zn）的污染情况。     

Effect of pressure and temperature on spin-dependent tunneling in InAs/GaAs heterostructure with Dresselhaus spin-orbit interaction

Using the transfer matrix, spin-dependent electron tunneling was studied in InAs/GaAs double barrier symmetrical heterostructure. The effect of Dresselhaus spin-orbit interaction in this system was analysed as a function of pressure and temperature. Both pressure and temperature influences the polarization efficiency, barrier transparency and dwell time of electrons. The increasing pressure increases polarization efficiency, tunneling life time and dwell time of electrons, where as the increasing temperature decreases the same parameters. The results might be helpful for the fabrication of spin-devices.     

Inversion of electrical mobility measurements using bipolar or unipolar chargers for the arbitrary distribution of channels

The inversion of the particle size distribution from electrical mobility measurements is analyzed. Three different methods are adapted for a dot-matrix approach to the problem, especially for non-square or singular matrices, and applied to electrical mobility measurements from fixed or scanning voltages. Multiply charged particles, diffusion losses, arbitrary voltage steps and noise were considered, which results in non-adjoining and overlapping transfer functions. The individual contribution of the transfer functions in each size interval was geometrically estimated, which requires only its characteristic mobilities. The methodology is applied to mobility measurements from particles charged with unipolar and bipolar chargers. However, the method can be extrapolated to any charging method with a defined charge distribution, and retrieval of the singly charged particle distribution and mean charge from a tandem differential mobility analysis configuration was successfully demonstrated.     

Massive transfer of vertically aligned Si nanowire array onto alien substrates and their characteristics

Si nanowires (NWs) are promising materials for future electronic, photovoltaic, and sensor applications. So far the Si NWs are mainly formed on particular substrates or at high temperatures, greatly limiting their application flexibility. Here we report a low temperature process for forming and massively transferring vertically aligned Si NWs on alien substrates with a large density of about (3-5) × 10⁷ NWs/mm². The X-ray diffraction spectrum reveals that the transferred NWs exhibit almost the same crystal property as the bulk Si. Our investigation further shows that the transferred NWs have exceptional optical characteristics. The transferred Si NWs of 12.14 μm exhibit the transmittance as low as 0.3% in the near infrared region and 0.07% in the visible region. The extracted absorption coefficient of Si NWs in the near infrared region is about 3 × 10³ cm⁻¹, over 30 times larger than that of the bulk Si. Because of the low temperature process, it enables a large variety of alien substrates such as glass and plastics to be used. In addition, the exceptional properties of the transferred NWs offer potential applications for photovoltaic, photo-detectors, sensors, and flexible electronics.     

The effects of indium segregation on exciton binding energy and oscillator strength in GaInAs/GaAs quantum wells

We solve analytically the Schrödinger equation taking into account the shape changes of GaInAs/GaAs quantum wells due to indium segregation during the MBE growth by using transfer matrix method. The indium compositional profiles of the quantum wells are provided using the phenomenological model. The fundamental transition energy, binding energy and oscillator strength of excitons as a function of indium segregation coefficient R$R$ and well width are studied. For narrow wells (less than 40 ML), the exciton binding energy and oscillator strength decrease, but for wide wells (larger than 40 ML), increase with increasing the segregation coefficient R$R$. It is shown that indium segregation degrades the optical properties and results in a blue-shift of exciton transition energy in GaInAs/GaAs quantum wells.     

Wave properties of an annular periodic multilayer structure containing the single-negative materials

The optical properties of an annular periodic multilayer structure containing two kinds of single-negative materials are theoretically investigated based on the transfer matrix method of the cylindrical waves. At the azimuthal mode number m1 and near the magnetic plasma frequency and the electronic plasma frequency for the TE wave and TM wave, respectively, we find that there is an additional high-reflectance band and some reflection dips exist when the plasma frequency is located in the photonic band gap. These two special features arising from the higher order azimuthal mode of the cylindrical waves are not seen in the planar one-dimensional Bragg reflector consisting of the single-negative materials. Such filtering responses provide a feasible way of designing a narrowband resonator without physically introducing any defect layer in the structure.     

Analysis of a 1×32 polymer microring resonant wavelength de-multi/multiplexer assistant with interleave filter

A new 1×32 wavelength de-multi/multiplexer utilizing the microring resonator and interleave filter is proposed in this paper. A novel formula of transfer functions is presented, the parameters of microring are optimized, and the transmission characteristics of the system are analyzed. The channel spacing of the presented device is 0.4 nm. The analytical result shows that the crosstalk between adjacent channels can be reduced greatly and the filter response of the device can be improved by using the interleave filter. A bandwidth (3 dB) of 0.21 nm, an insertion loss less than 1.1 dB, and crosstalk below −32 dB were obtained for the optimized device. A method for compensating the manufacturing tolerances is discussed.