100 GW快脉冲直线型变压器功率源

基于已经研制完成的100 kV/100 kA快脉冲直线型变压器驱动源（LTD）原型模块,设计研制了输出电压/电流分别为1 MV/100 kA（功率为100 GW）的快脉冲LTD装置。装置由10级100 kV/100 kA快脉冲LTD模块串联而成,总储能为20 kJ,装置直径约1.5 m,长度约2.2 m。最终在85 kV充电电压下,二极管负载上获得的电流约为116 kA,电压约为1.1 MV,电压上升时间53 ns,电压脉宽146 ns,二极管阻抗约为9.4 。     

磁绝缘电压叠加器功率流的电路计算方法

以已建成的10级直线变压器驱动源系统为依托,以传输线计算方法为基础,通过引入空间电荷限制流和磁绝缘流阻抗模型,对感应电压叠加(IVA)真空功率流的电路计算方法进行了探索,开发了包含磁绝缘过程的全电路计算程序,提供了一种快速评估该IVA系统真空功率流的方法。计算结果表明:对磁绝缘状态下流阻抗的描述是该方法准确计算的关键;解决好算法的数值稳定性,避免数值振荡的发生,是将这一方法推广应用的重要前提。     

±100 kV三电极场畸变气体火花开关

设计了一种用于直线变压器驱动源的三电极场畸变气体火花开关。开关采用SF6气体绝缘,开关尺寸和电感较小,实测开关电感约为67 nH。在工作电压80 kV、工作系数为70%时,开关触发时延为40.0 ns,抖动约2.8 ns。对比研究了钨铜合金和黄铜两种电极材料对开关静态和触发击穿特性的影响,研究结果表明:铜钨合金电极开关的自击穿电压分散性、触发时延及抖动、自放电概率和电极表面烧蚀均小于黄铜电极,更适宜作为三电极场畸变开关的电极材料。     

基于DE1-SoC的磁性介质显示系统设计与实现

针对常规平面成像技术表现形式单一,容易视觉疲劳等问题,提出一种新型的基于FPGA/ARM异构双核控制的磁性介质显示系统,实现磁性介质的立体动态成像;本系统通过在Altera DE1-SoC的Linux平台上构建Lighttpd轻量级Web服务器和设计开发功能程序、底层驱动程序、自定义IP核和Verilog逻辑译码程序来实现该显示系统的软硬件开发;本系统具有网络设备跨平台控制能力、磁流体精确控制能力以及多种样式的汉字和图案显示能力;大量实验表明该系统能够通过控制磁流体完美的表现出立体书法、绘画图案,且系统运行稳定可靠。     

1MA直线型变压器驱动源模块设计

介绍了输出电流幅值为1 MA,电流上升时间为100 ns的快脉冲直线型变压器驱动源(LTD)模块的设计。模块由48个子块并联组成,每个子块由2个电容器和一个多级气体开关串联组成。48个开关由8路高压脉冲触发,每路高压脉冲(100 kV/50 ns)触发6个开关。电路模拟显示,在充电90 kV条件下,输出电流幅值为1.04 MA,电流上升时间为84.5 ns(0~100%)和52 ns(10%~90%)。电路模拟时的参数设置以实验数据为基础,开关的工作条件与已研制成功的100 kA-LTD模块中的开关工作条件近似,模块设计工作于腔体注油状态以保证高压运行安全,能够保证模块达到设计要求。     

直线变压器驱动源磁芯能量传递效率

 磁芯是直线变压器驱动源(LTD)的关键部件之一,起着初、次级能量传递和次级电压感应叠加的作用,磁芯的能量传递效率对LTD系统的效率、体积和重量影响显著。对LTD系统中影响磁芯能量传递效率的原因进行了初步的分析,并利用Pspice软件的非线性磁芯模型对磁芯的工作过程和损耗进行了模拟计算,最后对LTD磁芯的能量传递效率进行了初步的实验研究,在工作电压为20 kV时、脉宽约220 ns时,在2.8 Ω负载上获得了大于60%的能量传递效率。     

负载阻抗对直线变压器驱动源传递效率的影响

从理论及模拟仿真分析了负载阻抗变化对双线型脉冲形成网络直接给负载放电,以及通过直线变压器(LTD)给负载放电时电压传递效率、能量传递效率以及峰值功率传递效率的影响。基于设计加工的LTD单元模块实验平台,通过调节水电阻负载阻值进行了一系列实验。实验研究结果表明:当负载阻值基本与双线型脉冲形成网络的阻抗2.5Ω相匹配时,可获得最大能量传递效率80.5%,此时电压传递效率、峰值功率传递效率分别为84.1%,73.9%;增大负载阻抗至3.4Ω时,可实现99.0%的电压传递效率,而能量传递效率、峰值功率传递效率仅减小3.5%,0.3%。根据对实验结果的分析可知,通过增大负载阻抗可以有效地提高系统的电压传递效率,且当负载阻抗变化不是太大时,对系统的能量传递效率以及峰值功率传递效率影响较小。     

Investigations on order and width of RZ super Gaussian pulse in pre-, post- and symmetrical-dispersion compensated 10 Gb/s optical communication system using standard and dispersion compensating fibers

We show the effect of varied order and width of super Gaussian pulse at 10 Gb/s in dispersion compensated optical communication system. The optical communication system consists of standard single-mode fiber of 16 ps/nm/km of a certain length, whose dispersion is compensated using pre-, post- and symmetrical-dispersion compensation schemes with proportionate length dispersion compensating fiber of −80 ps/nm/km. Performance of these three compensation schemes is compared at 14 dBm values of Er-doped fiber amplifiers (EDFA) power at 1st, 2nd and 3rd order RZ super Gaussian optical pulse. The pulse width, full width at half maximum (FWHM) is also varied from 5 to 30 ps to highlight the optimum performance. The graphical results obtained show a relationship among the attributes pulse width, order of RZ super Gaussian optical pulse and dispersion compensation scheme implemented. It shows that to decrease BER and timing jitter in the system, smaller width and 3rd order super Gaussian pulse should be used. It is recommended that to decrease dependency of BER and timing jitter in the communication system on the pulse width i.e. FWHM, the symmetrical compensation scheme should be implemented.     

Performance evaluation of path-averaged soliton pulses in loss-managed 10-Gbps soliton transmission link over a long haul

In this paper, the performance evaluation of path-averaged soliton transmission link for various performance measures viz. OSNR, optical power, extinction ratio, bit error rate (BER) and Q factor at different levels of noise figure and values of pulse width (FWHM) has been carried out. The performance of soliton transmission link is studied, taking into account soliton interaction, amplified spontaneous emission (ASE) noise and noise figure. The model presented considers interaction in a random sequence of solitons and the effect of the ASE noise added in each amplification stage. The influence of ASE noise, noise figure and pulse width with different amplifier spacing on the BER and quality factor has been investigated. It has been shown that these play dominant roles in degrading the performance measures. We have demonstrated the capability of path-averaged (guiding-centre) soliton for a long-haul distance of 17,000 km at a bit rate of 10 Gbps without ASE effect and noise figure in each amplifier span length of 500 km. The average value of quality factor is found to be 16.6 dB and the average BER is of the order of 10⁻¹² over the transmission distance of 17,000 km. Further, it has been investigated that a severe system penalty results on the inclusion of ASE effect and noise figure in order to achieve the same level of performance. Thus, the investigations ascertain that in order to maintain the same level of BER and Q factor, the amplifier spacing and total transmission distance reduce considerably.     

InGaZnO薄膜晶体管背板的栅极驱动电路静电释放失效研究

本文通过解析阵列基板栅极驱动(gate driver on array, GOA)电路中发生静电释放(electro-static discharge,ESD)的InGaZnO薄膜晶体管(InGaZnO thin-film transistor, IGZO TFT)器件发现:栅极Cu金属扩散进入了SiN_x/SiO_2栅极绝缘层;源漏极金属层成膜前就发生了ESD破坏;距离ESD破坏区域越近的IGZO TFT,电流开关比越小,直到源漏极与栅极完全短路.本文综合IGZO TFT器件工艺、GOA区与显示区金属密度比、栅极金属层与绝缘层厚度非均匀性分布等因素,采用ESD器件级分析与系统级分析相结合的方法,提出栅极Cu:SiN_x/SiO_2界面缺陷以及这三层薄膜的厚度非均匀分布是导致GOA电路中沟道宽长比大的IGZO TFT发生ESD失效的关键因素,并针对性地提出了改善方案.