Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors(MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density Ditof the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness(EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy(HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO2 or Al2O3 dielectric layers.     

外电场下二氧化锆的分子结构及其特性

对O原子采用6-311++G*基组,Zr原子采用aug-cc-pVTZ-PP基组,利用密度泛函(B3P86)方法优化得到了ZrO2分子的稳定构型,并研究了不同外电场(0—0.025 a.u.)作用下ZrO2基态分子键长、能量、电荷分布、偶极矩和能级的变化规律.在优化构型的基础上,利用含时密度泛函(TD-B3P86)方法研究了ZrO2分子在外电场作用下前6个激发态的激发能、跃迁波长和振子强度的激发特性.研究结果表明:随着电场强度的增大,Zr—2O的键长增大,而Zr—3O的键长均匀减少,总能量降低,偶极矩增大;最高占据轨道能量基本保持不变,最低未占据轨道和能隙均减小.电场的增大使得激发能减小,各个激发态跃迁波长均发生不同程度的红移现象,因而,利用外电场可以控制ZrO2的发光光谱范围在可见-红外区域扩展.     

Transport properties and anomalous fatigue effect of Ag/Bi0.9La0.lFeO3/La0.7Sr0.3MnO3 heterostructures

The transport properties and fatigue effect of Ag/Bi0.9La0.lFeO3/La0.7Sr0.3MnO3 heterostructures are described. By examining the I-V curves, an anomalous fatigue effect was found and its influences on resistive states were studied. I-V curves combined with C-f spectra were used to directly analyze the transport properties and fatigue effect. Compared to the first I-V cycle state, this structure shows more than one order increase of resistance after 100 cycles of ＂I-V curve training＂. The redistribution of oxygen vacancies in the depletion layer of Ag/Bi0.9La0.lFeO3 is believed to be responsible for the different resistance mechanisms and tenfold magnitude drop in resistance. The resistive switching is understood to be caused by electric field-induced carrier trapping and detrapping, which changes the depletion layer thickness at the Ag/Bi0.9La0.lFeO3 interface.     

超重核294118及其α衰变链的基态性质

用形变约束的相对论平均场理论系统研究了超重核²⁹⁴118及其α衰变链的基态性质, 给出了这些原子核的每核子结合能和α衰变能以及基态形变, 并与实验结果进行了比较, 发现理论计算和实验结果符合得很好, 表明相对论平均场理论对超重核基态性质的描述是合理有效的.     

First-principles study of electronic structure and ferromagnetism in Ti-doped ZnO

We perform first-principles spin polarized calculations of the electronic structure of Ti-doped in ZnO. Ferromagnetism in Ti-doped ZnO is identified, which is in agreement with recent experimental and calculated results. A net magnetic moment of 0.715μ_B is found per Ti. At a Ti concentration of 12.5%, total energy calculations show that the ferromagnetic state is 68 meV lower than the antiferromagnetic state. The electronic states near Fermi energy are dominated by strong hybridization between O 2p and Ti 3d, which is just the origin of impurity band in Ti-doped ZnO and also implies that the Ti-O bond is quite covalent instead of purely ionic. Since there is no magnetic element in this compound, Ti-doped ZnO appears to be an unambiguous dilute magnetic semiconductor.     

Macroscale and microscale evolutions of mechanically alloyed FeZn systems

The present work aims to correlate, in time, macroscale and microscale phenomenological evolutions of the microstructure of Fe and FeZn alloys processed by mechanical milling (MM) and alloying (MA), respectively. Powders were characterized for particle size distribution (PSD), particle morphology (optical microscopy, OM, scanning electron microscopy, SEM), microhardness, crystallite size, differential scanning calometry (DSC) and transmission electron microscopy (TEM). Two macroscopic regimes of PSD behavior were distinguished: the first one dominated by the cold welding process; and, the other where both fracture and agglomeration play a significant role. Solid solubilization of Zn on bcc Fe was found to reduce the final microhardness as well as increase the lattice parameter and is very well predicted by Miedema's thermodynamical approach. Microhardness and solid solution formation kinetics were correlated in time and both could be precisely described by a logistic function. After 5 h of planetary milling, microhardness and the lattice parameter become stable as well as the PSD and particle morphology, indicating that the system has already reached steady state. Indeed, this condition can be monitored by both macroscopic and microscopic parameters. Prior to an homogeneous powder, DSC results suggest an endothermic solid-state amorphization reaction for samples processed for up to 1 h as a result of the formation of clean Fe/Zn interfaces during MA.     

基于荧光玻璃的高效LED白光技术

采用高温熔融法制备了一定质量比例的SiO_2-YAG∶Ce~(3+)片状荧光玻璃,厚度为0.2 mm,分析其XRD物相、光学和SEM微观结构、PL光谱。结果表明:荧光玻璃保留了晶相,荧光粉颗粒在玻璃基质中均匀分布,荧光玻璃和荧光粉的激发响应关系一致。在465 nm蓝光激发下,发射波长均在535 nm附近,表明荧光玻璃除含有玻璃相,还有荧光粉的物质结构特性。将不同波长蓝光芯片与不同荧光粉含量的荧光玻璃进行封装测试,结果表明:器件的流明效率可达到234.81 lm/W;色温和显色指数均随荧光粉含量增加而单调下降,呈现高色温和低显色指数;荧光粉质量分数从6%增加至15%时,不同波长激发下的色坐标x与y呈现大致相同的线性变化率。采用450 nm激光激发荧光玻璃,测试样品温度变化发现温升较缓,温降迅速,耐热性能优越。实验结果表明,将荧光玻璃用于LED白光照明封装,能实现流明效率和耐热性能的大幅提升,形成良好的白光输出。     

溶剂热法制备铜锌锡硫粉末及光学性能研究

以金属氯化物作为金属源,硫脲为硫源,乙二醇为溶剂,聚乙烯吡咯烷酮(PVP)为表面活性剂,采用溶剂热法在较低反应温度下合成了Cu2ZnSnS4(CZTS)粉末。利用X射线衍射仪(XRD)、拉曼光谱(Raman)、扫描电子显微镜(SEM)、高分辨透射电子显微镜(HRTEM)对样品的结构和形貌进行表征。利用紫外-可见光谱(UV-Vis)对样品的光学性能进行研究。结果表明,180℃反应25小时的样品均为锌黄锡矿CZTS颗粒,颗粒形貌为表面花状的微球。当体系中PVP含量为0.2g时,微球尺寸约为2.5μm。当体系中PVP含量为0.3g,0.4g,0.5g时,微球尺寸大约为1.1μm。其中,PVP含量为0.4g的样品分散性较好,在可见区有明显的吸收,用外延法得到其禁带宽度约为1.45eV,与太阳能电池所需的最佳禁带宽度接近。     

Direct micropatterning of high dielectric BaTiO3 films by laser-induced pyrolysis with a nano-crystalline seeding technique

A direct patterning method of dielectric BaTiO₃ (BT) films is proposed, which applies laser-induced pyrolysis in combination with nano-crystalline seeding technique. A precursor solution of a BT complex alkoxide containing BT nano-crystalline particles with polyvinylpyrollidone (PVP) as dispersion stabilizer was spin-coated on Pt substrate. An Ar⁺ laser beam was focused and scanned on spin-coated BT films, which induced pyrolysis and crystallization of the films with spatial selectivity. Micropatterns were obtained by striping laser-unirradiated regions on the films with HCl aqueous solution. Raman spectra of the micropattern confirmed that the structures were tetragonal crystalline BT. Clear micropatterns with a line width of ca. 3 μm and an interval of 5 μm were formed at PVP concentrations of 25 and 50 kg/m³. The dielectric constant and dissipation factor of the film fabricated at a laser energy density of 27 MW/cm² and a scanning speed of 25 μm/s attained 76.2 and 0.07, respectively, for a measurement frequency of 100 kHz.     

Complete suppression of metastable phase and significant enhancement of magnetic properties of B-rich PrFeB nanocomposites prepared by devitrifying amorphous ribbons

The effect of refractory element addition on phase transformation, crystallization behavior and magnetic properties of Pr_8.5Fe_81.5B₁₀ (addition-free) and Pr_8.5Fe_81.5M₂B₁₀ (M=V, Cr, Nb, Zr, Ti) ribbons has been investigated. The annealed addition-free ribbon as well as the samples with V or Cr additions are mainly composed of the metastable Pr₂Fe₂₃B₃ phase, whereas annealed ribbons with Nb, Zr or Ti additions primarily consist of Pr₂Fe₁₄B and a minor amount of Fe₃B/boride. The complete suppression of the metastable Pr₂Fe₂₃B₃ phase due to Nb, Zr or Ti additions leads to a significant enhancement of the magnetic properties. For example, the remanence, the coercivity and the energy product are remarkably increased from 2.5 kG, 0.4 kOe and 0.2 MG Oe for the addition-free material to 9.2 kG, 4.7 kOe and 7.6 MG Oe for the specimens with Nb addition. The successful elimination of the metastable Pr₂Fe₂₃B₃ phase is believed to profit from two factors: (a) Nb, Zr or Ti atoms substitute the Pr site, comparatively increase the Pr content, and thus inhibit the nucleation of Pr-lean Pr₂Fe₂₃B₃ phases, and (b) the formation of Nb, Zr, or Ti borides consumes some part of B, which hinders the generation of the B-rich Pr₂Fe₂₃B₃ phase.