Ag-Bi高温超导线材转变温度的测量

介绍了 Bi系银包套高温超导线材的电阻温度特性 ,用测电阻和电磁感应两种方法分别测量了材料的超导转变温度 ,电磁感应法测量曲线上台阶的出现表明材料中 Bi(2 2 2 3)和 Bi(2 2 12 )两相的存在。     

25MeV/u6He+9Be反应的轻粒子发射

在25MeV/u ⁶He与⁹Be靶的反应中,107°和128°处明显地观察到了轻粒子发射.粒子能谱形状与平衡热源蒸发相一致,分析得到热源的核温度为完全熔合条件下的5.6MeV或非完全熔合条件下的5.2MeV .实验发现发射氚的数量特别大,这可能与目前广泛研究的⁶He的集团结构和同位旋效应有关.     

不同温度均匀二半空间接触后产生的辐射场

 应用电磁线路中涨落耗散理论，推导了不同温度均匀二半空间接触后产生辐射场密度的公式。将此公式近似展开后，即得Grover和Urtiew所获得的表示式，不过多了一松弛项，该项如用非富里叶热传导理论推导，也是存在的。该结果和实验结果一致，不过这里的松驰时间可以应用介质性质进行计算。     

Asymptotic Distribution of Nodes for Near-Optimal Polynomial Interpolation on Certain Curves in R 2

Let E\subset \Bbb R ^s be compact and let d _n ^E denote the dimension of the space of polynomials of degree at most n in s variables restricted to E . We introduce the notion of an asymptotic interpolation measure (AIM). Such a measure, if it exists , describes the asymptotic behavior of any scheme τ _n ={ \bf x _k,n } _k=1 ^dnE , n=1,2,\ldots , of nodes for multivariate polynomial interpolation for which the norms of the corresponding interpolation operators do not grow geometrically large with n . We demonstrate the existence of AIMs for the finite union of compact subsets of certain algebraic curves in R ² . It turns out that the theory of logarithmic potentials with external fields plays a useful role in the investigation. Furthermore, for the sets mentioned above, we give a computationally simple construction for ``good' interpolation schemes. November 9, 2000. Date revised: August 4, 2001. Date accepted: September 14, 2001.     

腔靶等离子体辐射温度空间分布测量

本文描述了用膜吸收法测量激光等离子体辐射温度空间分布的原理和方法给出了柱形缝靶轴向辐射温度随空间位置变化的特征,对测量结果进行了分析讨论。     

Calibration of a basket option model applied to company valuation

Applying real options thinking to company valuation seems theoretically and intuitively appealing. However, the real option analogy of a single European option as well as the compound option proxy perform poorly when applied to company valuation. We therefore suggest to rework the building blocks of real option applications to corporate valuation.  We introduce a framework to delineate the distribution of the underlying asset in the risk neutral world, which is important in order to value any derivative. This is achieved by an algorithm to calibrate a basket option model using real world data of observed share prices. The fitting takes account of the class of stable distributions. The index of stability of asymmetric α stable distribution serves as an over-all parameter to characterise the specific distribution.     

Cr^4＋：YAG,Cr^4＋：Mg2SiO4近红外荧光辐射温度特性研究

测量了Ｃｒ＾４＋，ＹＡＧ、Ｃｒ＾４＋，Ｍｇ２ＳｉＯ４晶体在室温和液氮温度下的荧光光谱，吸收光谱和激发态寿命，讨论了温度变化时，两种晶体中Ｃｒ＾４＋近红外辐射积分强度变化与激光发态寿命变化的关系，得出结论：在７７Ｋ￣３００Ｋ范围内，Ｃｒ＾４＋的＾３Ｔ２能级荧光辐射截面本身受温度影响不大，Ｃｒ＾４＋辐射荧光的变化，主要是由无辐射弛豫速率随温度变化而引起的。     

Study of hot bands in the B2Σ+u-X2Σ+g system of C-2 anion

Optical heterodyne magnetic rotation enhanced velocity modulation spectroscopy was employed to observe the visible absorption spectra of the B^2Σ^+_u-X^2Σ^+_g electronic transition of C^-_2. Four hot bands (0,1), (1,2), (2,3) and (3,4) have been observed and the band (3,4) is measured directly for the first time, so far as we know, by absorption. A rotational analysis was carried out to obtain molecular constants. With the Franck－Condon principle and the vibrational Boltzmann distribution, we have estimated the vibrational temperature of C^-_2 to be about 3000K.     

Linear calibration procedure for the phase-to-height relationship in phase measurement profilometry

Calibration of the relationship between height and phase is of uttermost importance to perform accurate 3D measurements in phase measurement profilometry. This work reports a different approach to this problem by first looking at the analytical expression for this relationship and determining the regime spanned by the fringe analysis method. The conclusions thus ascertained, amply justify confronting the analytical expression with a simple normalization procedure of the experimental data, with a remarkable matching between both results. In light of this, a linear calibration procedure with just one plane is proposed and verified experimentally.     

应变Si1-xGex层中p型杂质电离常温和低温特性

本文采用解析的方法计算了应变Si1-xGex层中p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系.发现常温时,在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度的先变小,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加先变大,而后几乎不变;重掺杂时,杂质电离能变为0后,杂质电离度为1.低温下,轻掺杂时,载流子低温冻析效应较为明显,杂质的电离度普遍较小,当掺杂浓度大于Mott转换点时,载流子冻析效应不再明显,电离率迅速上升到1.在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度先变小,后变大,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加变大;重掺杂时,杂质电离能变为0后,杂质电离度为1.