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61.
D. Behera T. Mohanty S. K. Dash T. Banerjee D. Kanjilal N. C. Mishra 《Radiation measurements》2003,36(1-6):125-129
Swift heavy ions (SHI) with electronic energy loss exceeding a value of 14.4 keVnm−1 create amorphized latent tracks in YBCO type superconductors. In the low fluence regime of an ion beam where tracks do not overlap, a decrease of the superconducting transition temperature as probed through resistivity studies, is not expected due to availability of percolating current paths. The present study however shows Tc decrease by about 1–3 K in thin films of YBCO when irradiated by 250 MeVAg ions at 79 K at a fluence of 5×1010–1×1012 ionscm−2. The highest fluence used in the present study is three times less than the fluence where track overlapping becomes significant. The Tc tends to increase towards the preirradiation value on annealing the films at room temperature. To explain this unusual result, we consider the effect of ion irradiation in inducing materials modification not only through creation of amorphized latent tracks along the ion path, but also through creation of atomic disorder in the oxygen sublattice in the Cu–O chains of YBCO by the secondary electrons. These electrons are emitted radially from the tracks during the passage of the SHI. Considering the correlation between the charge state of copper and its oxygen coordination, we show in particular that the latter process is a consequence of the inelastic interaction of the SHI induced low-energy secondary electrons with the YBCO lattice, which result in chain oxygen disorder and Tc decrease. 相似文献
62.
N. Nishi J. Nishijo K. Judai C. Okabe O. Oishi 《The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics》2007,43(1-3):287-290
UV photoexcitation of (t-butylethynyl copper)24
cluster films induces segregation of the crystals into metallic and organic
phases and leads to evolve the metallic sheets sandwiched by organic
polymers. The growth of the metallic crystals in the plane of the
photo-electromagnetic field is attributed due to plasmon-plasmon interaction
among nanoparticles embedded in dielectric polymer matrices. The surface
enhanced photochemical reaction of residual cluster molecules on the photon
incident direction is expected to take an important role for joining the
metal particles to produce a metallic sheet. We can apply this phenomenon
for photolithographic copper pattern generation on a flexible base plate. 相似文献
63.
Pulsed laser deposition with a Nd:YAG laser was used to grow thin films from a pre-synthesized Ti3SiC2 MAX-phase formulated ablation target on oxidized Si(1 0 0) and MgO(1 0 0) substrates. The depositions were carried out in a substrate temperature range from 300 to 900 K, and the pressure in the deposition chamber ranged from vacuum (10−5 Pa) to 0.05 Pa Argon background pressure. The properties of the films have been investigated by Rutherford backscattering spectrometry for film thickness and stoichiometric composition and X-ray diffraction for the crystallinity of the films. The silicon content of the films varied with the energy density of the laser beam. To suppress especially the silicon re-sputtering from the substrate, the energy of the incoming particles must be below a threshold of 20 eV. Therefore, the energy density of the laser beam must not be too high. At constant deposition energy density the film thickness depends strongly on the background pressure. The X-ray diffraction measurements show patterns that are typical of amorphous films, i.e. no Ti3SiC2 related reflections were found. Only a very weak TiC(2 0 0) reflection was seen, indicating the presence of a small amount of crystalline TiC. 相似文献
64.
65.
66.
In photochemical vapor deposition of aluminum film on silicon using dimethylaluminum hydride, (CH3)2AlH, a surface reaction dominated below a (CH3)2AlH pressure of 0.3 m Torr at 200°C, which was induced only with the 160 nm band emitted from a deuterium lamp. A gas-phase reaction occurred above 0.3 mTorr at 200°C, which could be induced by both 160 nm and 240 nm emission bands from the lamp. To distinguish between surface ad gas-phase reactions, a thickness profile was used. At 240°C the surface reaction could be induced even by the 240 nm band, while the deposits formed under illumination of the two bands were thinner than those obtained with only the 240 nm band, indicating occurrence of vacuum ultraviolet (VUV)-enhanced desorption. The mechanism responsible for the observed wavelength dependence in unclear. The electrical resistivity of the films deposited at 200°C was 4.5 μΩ cm, which did not change with wavelength. 相似文献
67.
本文论述应用光学薄膜技术对汽车窗口玻璃和塑料的若干性能进行改进的技术发展水平,这些性能包括塑料表面的硬化,红外区的反射,紫外区的吸收,偏振化作用,双折射,憎水性以及光学角度选择性等,评论等离子体处理和物理蒸汽淀积薄膜工艺近来应用的一些例子。对于物理蒸汽淀积薄膜所提供的异常功能连同实际使用中它们的耐久性作了特殊的强调。 相似文献
68.
A method for the deposition of BN onto graphite and other substrates is described. Boron trichloride (BCl3) and ammonia (NH3) diluted with Ar were used as reacting gases. The deposition process was carried out at 1300 K as well as lower temperatures in an open system at pressures of 1 atm. The consequences of the introduction of hydrogen to the system were considered. It was demonstrated that the replacement of argon with hydrogen increases the efficiency of the process as well as the theoretical rate of BN deposition. However, the acceleration of the deposition seems to be unprofitable, because the resulting supersaturation leads to the formation of an amorphous phase. The modification of the experimental conditions were proposed.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday 相似文献
69.
70.
Yunshan Dong 《Applied Surface Science》2006,252(14):5057-5062
A series of Zr-Si-N composite films with different Si contents were synthesized in an Ar and N2 mixture atmosphere by the bi-target reactive magnetron sputtering method. These films’ composition, microstructure and mechanical properties were characterized by energy dispersive spectroscopy, X-ray diffraction, scanning electron microscopy, atomic force microscopy and nanoindentation. Experimental results revealed that after the addition of silicon, Si3N4 interfacial phase formed on the surface of ZrN grains and prevented them from growing up. Zr-Si-N composite films were strengthened at low Si content with the hardness and elastic modulus reaching their maximum values of 29.8 and 352 GPa at 6.2 at% Si, respectively. With a further increase of Si content, the crystalline Zr-Si-N films gradually transformed into amorphous, accompanied with a remarkable fall of films’ mechanical properties. This limited enhancement of mechanical properties in the Zr-Si-N films may be due to the low wettability of Si3N4 on the surface of ZrN grains. 相似文献