用于脉冲γ强度测量的Ф60,1000μmPIN探测器

采用电阻率为10000—20000Ω.cm的高阻单晶硅材料,研制成功灵敏区尺寸为60mm,耗尽层厚度~1000μm的大面积厚PIN半导体探测器.设计了该类探测器厚度测量专用的反冲质子测量系统,对探测器的时间响应、γ灵敏度、漏电流、γ/n分辨等物理参数进行了测量和分析,结果表明,这类探测器可满足低强度裂变n/γ混合场中脉冲γ强度测量的需要.     

The charge states’ conversion of the activator ions in CaF2:Eu nanophosphors

According to stationary X-ray-excited luminescence spectra and thermally stimulated luminescence spectra of CaF₂:Eu nanophosphors, it was found that Eu³⁺?→?Eu²⁺ conversion can occur during thermal annealing of fine-grained (d?=?25?nm) nanoparticles in the 200–800°C range, which is accompanied by an increase in their size within 40–189?nm. An important role of the exciton mechanism of Eu²⁺ luminescence excitation was revealed according to the temperature dependence of X-ray-excited luminescence spectra of CaF₂:Eu nanoparticles of 114?nm size. The maximum of the X-ray-excited luminescence light output of CaF₂:Eu nanophosphors in the Eu²⁺ ions’ emission band was traced out at 400–500°C annealing temperature and at the size of nanoparticles of 114–180?nm. The subsequent growth of the annealing temperatures, particularly in the 800–1000°C range, causes the reduction of X-ray-excited luminescence light output because of the increment of lattice defects’ concentration due to a sharp increase in the size of nanoparticles and their agglomeration.     

超导故障限流器的研究现状及其应用

超导故障限流器(Superconducting Fault Current Limiter,SFCL)是利用超导体的基本特性,有效限制电力系统故障短路电流,提高电网安全性和稳定性的一种新型电力设备。文中在综合大量文献的基础上,对超导故障限流器进行了一种较为系统的分类。基于该种分类,结合目前国内外的研究现状,就电阻型、磁屏蔽型、饱和铁芯电抗器型、桥路型SFCL的工作原理作了详细的分析介绍,还给出了它们在电力系统中的安装位置。最后,对超导故障限流器的研究中存在的问题及其发展趋势做了说明。     

Stimulated emission and multi-peaked absorption in a four level N-type atom

Absorption and refraction of the inner transition F₂\leftrightarrow F₃ of the closed four level N-type atom have been investigated under a weak field. The outer transitions F₁\leftrightarrow F₃ and F₂\leftrightarrow F₄ are resonantly interacted with drive field with frequency \omega_c and Rabi frequency \Omega_c, and saturation field with \Omega_s and \Omega_s, respectively. For the suitable Rabi frequencies \Omega_c and \Omega_s, we obtain the Mollow absorption spectrum of probe field. The reason is that the drive field excites the atom to the upper level F_c and simultaneously the saturation field takes the atom out of the lower level F₂, leading to the stimulated emission. Meanwhile, due to the dynamic energy splitting induced by the drive and saturation fields, the two- and four-peaked absorption spectra are observed. At the zero off-resonance detuning of probe field, we also find the transfer of dispersion from negative to positive with an increment of \Omega_s. Finally, the refractive index enhancement is predicted for a wide spectral region.     

Ground-state entanglement in a three-spin transverse Ising model with energy current

The ground-state entanglement associated with a three-spin transverse Ising model is studied. By introducing an energy current into the system, a quantum phase transition to energy-current phase may be presented with the variation of external magnetic field; and the ground-state entanglement varies suddenly at the critical point of quantum phase transition. In our model, the introduction of energy current makes the entanglement between any two qubits become maximally robust.     

Persistent spin current in a quantum wire with weak Dresselhaus spin——orbit coupling

The spin current in a parabolically confined semiconductor heterojunction quantum wire with Dresselhaus spin--orbit coupling is theoretically studied by using the perturbation method. The formulae of the elements for linear and angular spin current densities are derived by using the recent definition for spin current based on spin continuity equation. It is found that the spin current in this Dresselhaus spin--orbit coupling quantum wire is antisymmetrical, which is different from that in Rashba model due to the difference in symmetry between these two models. Some numerical examples for the result are also demonstrated and discussed.     

Leakage current and sub-bandgap photo-response of oxygen-plasma treated GaN Schottky barrier diodes

The effect of oxygen plasma treatment on the performance of GaN Schottky barrier diodes is studied. The GaN surface is intentionally exposed to oxygen plasma generated in an inductively coupled plasma etching system before Schottky metal deposition. The reverse leakage current of the treated diodes is suppressed in low bias range with enhanced diode ideality factor and series resistance. However, in high bias range the treated diodes exhibit higher reverse leakage current and corresponding lower breakdown voltage. The X-ray photoelectron spectroscopy analysis reveals the growth of a thin GaO_x layer on GaN surface during oxygen plasma treatment. Under sub-bandgap light illumination, the plasma-treated diodes show larger photovoltaic response compared with that of untreated diodes, suggesting that additional defect states at GaN surface are induced by the oxygen plasma treatment.     

黑腔靶中超热电子特性研究

近几年来,在“神光”装置上进行了1.053μm激光与平面靶及一系列柱形黑腔靶相互作用实验。用一台多道滤波—荧光X光能谱仪(FFS)测得各种靶发射的超热X射线谱,由谱推导超热电子温度T_h和超热电子总能量E_h当照射靶单束激光能量E_(tar)为400～670J、脉宽τ=650～1150ps时,发现黑腔内明显存在两群服从Maxwell分布高能电子(T_h=35～45keV;T_(hh)=150～350kev),而且E_(he)占E_(tar)的份额为10％～12％。实验还表明:腔内的E_(he)与非线性过程特征量(SRS)有较好的线性关系,因此推断出腔内超热电子产生的主要机制是受激Raman散射。在相同照射条件下,黑腔靶产生的超热电子比平面靶严重。     

不同电磁脉冲对细导线的耦合

 采用时域有限差分法,结合细线处理方法,分别对超宽带电磁脉冲、快前沿电磁脉冲和核电磁脉冲在自由空间细导线上耦合的电流进行了数值计算,得出了不同前沿和脉宽的电磁脉冲在细导线上的感应电流。     

铝酸盐类发光材料红外释光的研究

报道了铝酸盐类发光材料体系存在高效率的红外释光现象,成功地合成出对红外光束反应灵敏的铝酸盐类发光材料,研制出红外激光检测板,同时研究了该类发光材料红外与紫外发光及其荧光衰减特性,提出了该类发光材料的红外发光应属于红外释光过程,并展示了其实际应用前景。