Characterization and electrical properties of polypyrrole/multiwalled carbon nanotube composites synthesized by in situ chemical oxidative polymerization

This study describes the preparation of polypyrrole (PPy)/multiwalled carbon nanotube (MWNT) composites by in situ chemical oxidative polymerization. Various ratios of MWNTs, which served as hard templates, were first dispersed in aqueous solutions with the surfactant cetyltrimethylammonium bromide to form micelle/MWNT templates and overcome the difficulty of MWNTs dispersing into insoluble solutions of pyrrole monomer, and PPy was then synthesized via in situ chemical oxidative polymerization on the surface of the templates. Raman spectroscopy, Fourier transform infrared (FTIR), field‐emission scanning electron microscopy (FESEM), and high‐resolution transmission electron microscopy (HRTEM) were used to characterize the structure and morphology of the fabricated composites. Structural analysis using FESEM and HRTEM showed that the PPy/MWNT composites were core (MWNT)–shell (PPy) tubular structures. Raman and FTIR spectra of the composites were almost identical to those of PPy, supporting the idea that MWNTs served as the core in the formation of a coaxial nanostructure for the composites. The conductivities of these PPy/MWNT composites were about 150% higher than those of PPy without MWNTs. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 1413–1418, 2006     

Memory switching of germanium tellurium amorphous semiconductor

The dc conductivity and switching properties of amorphous GeTe thin film of thickness 262 nm are investigated in the temperature range 303-373 K. The activation energy ΔE_σ, the room temperature electrical conductivity σ_RT and the pre-exponential factor σ₀ were measured and validated for the tested sample. The conduction activation energy ΔE_σ is calculated. The I-V characteristic curves of the thin film samples showing a memory switching at the turnover point (TOP) from high resistance state (OFF state) to the negative differential resistance state (NDRS) (ON state). It is found that the mean values of the threshold electrical field E_th decreased exponentially with increasing temperatures in the investigated range. The switching activation energy ΔE_th is calculated. Measurements of the dissipated threshold power P_th and the threshold resistance R_th were carried out at TOP point at different temperatures of the samples. The activation energies ΔE_R and ΔE_P caused by resistance and power respectively are deduced. The results obtained support thermal model for initiating switching process in this system.     

Thermal conductivity, dislocation density and GaN device design

The performance of high power transistor devices is intimately connected to the substrate thermal conductivity. In this study, the relationship between thermal conductivity and dislocation density is examined using the 3 omega technique and free standing HVPE GaN substrates. Dislocation density is measured using imaging cathodoluminescence. In a low dislocation density regime below 10⁵ cm⁻², the thermal conductivity appears to plateau out near 230 W/K m and can be altered by the presence of isotopic defects and point defects. For high dislocation densities the thermal conductivity is severely degraded due to phonon scattering from dislocations. These results are applied to the design of homoepitaxially and heteroepitaxially grown HEMT devices and the efficiency of heat extraction and the influence of lateral heat spreading on device performance are compared.     

On the reliability of unsaturated hydraulic conductivity calculated from the moisture retention curve

In comparison with direct measurements of unsaturated hydraulic conductivity, the methods of calculations from the moisture retention curve are attractive for their fast and simple use and low cost. These are the main reasons for their increasing use, mainly in spatial variability studies. On the other hand, it is known that their applicability is limited. The possibility of the use of the retention curve to indirectly determine hydraulic conductivities is analyzed as follows. The theoretical derivation of the relationK(h) – (h) is briefly discussed with regards to potential sources of inaccuracy. The sensitivity of the algorithm forK(h) calculation is studied as a response to possible inaccuracies in the retention curve determination. Conclusions about the usability of calculated hydraulic conductivities are drawn.     

Studies on Solid State Reactions of Coordination Compounds（LXXI）──Solid State Reactions of o－Aminobenzoic Acid with Copper（Ⅱ） Acetate and Formate at Room Temperature

ＳｔｕｄｉｅｓｏｎＳｏｌｉｄＳｔａｔｅＲｅａｃｔｉｏｎｓｏｆＣｏｏｒｄｉｎａｔｉｏｎＣｏｍｐｏｕｎｄｓ（ＬＸＸＩ）──ＳｏｌｉｄＳｔａｔｅＲｅａｃｔｉｏｎｓｏｆｏ－ＡｍｉｎｏｂｅｎｚｏｉｃＡｃｉｄｗｉｔｈＣｏｐｐｅｒ（Ⅱ）ＡｃｅｔａｔｅａｎｄＦｏｒｍ...     

Pt对Mo基催化剂还原-硫化过程的影响

采用脉冲硫化、连续硫化、程序升温还原、程序升温及程序降温电导及X射线衍射等方法研究了贵金属Pt对MoO3催化剂还原-流化过程的影响及Pt对MOS2配位不饱和活性中心形成的影响．结果表明，Pt担载或在MoO3上可以促进MoO3的还原-硫化，使MoO3的还原-硫化温度大大降低Pt担载在MoSw上可促进MoS2的部分还原形成配位不饱和的钼中心     

Ni-SDC固体氧化物燃料电池阳极的合成和性质

采用柠檬酸-硝酸盐溶胶-凝胶低温自蔓延燃烧法制备氧化镍（NiO）粉末和Ce0.8Sm0.2O1.9（SDC）粉末，并将NiO与SDC按不同质量比和不同制备工艺制备了固体氧化物燃料电池（SOFC）的阳极前身。再用自组装的还原装置将其在820℃经2．5h还原后，采用四端子法测量其电导率值。分析了阳极片电导率与阳极片微结构、Ni的质量百分数、混合研磨时间及烧结温度之间的关系。结果显示，阳极片的电导率强烈依赖于镍含量和制备工艺。     

壳聚糖固体聚合物电池用膜

壳聚糖是甲壳素脱乙酰基的产物，具有良好的成膜性、生物相容性、环保以及价格低廉等特点。作为一种碱性高分子膜材料，近年来已成为聚电解质研究领域中的研究热点。本文综述了壳聚糖固体聚合物电池用膜的研究现状，其改性工艺主要包括共混、化学改性、质子酸掺杂、无机盐掺杂等方法，比较了各种工艺处理后壳聚糖固体聚合物电解质膜的性能差异，并就壳聚糖固体聚合物电解质膜中离子传导机理中有待解决的问题进行探讨，并提出了进一步改进壳聚糖固体聚合物电解质膜性能的研究思路。     

溶胶－凝胶法制备Na_5YSi_4O_（12）及其离子导电性质

用溶胶－凝胶方法制备了钠快离子导体Ｎａ_５ＹＳｉ_４Ｏ_（１２）（简称ＮＹＳ）的纯相，应用交流阻抗谱技术测定了样品的离子电导和离子导电活化能，用扫描电子显微镜对用不同方法制备的样品烧结体表面进行了观察。与传统固相反应法制备的ＮＹＳ离子导体相比，用溶胶－凝胶方法制备的ＮＹＳ烧结体具有较好的界面效应。