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181.
非傍轴平顶高斯光束M2因子两种定义的比较研究 总被引:1,自引:1,他引:0
基于功率密度的二阶矩方法,推导出了非傍轴平顶高斯(FG)光束束宽和远场发散角的解析表达式.研究表明,当w0/λ→0时,远场发散角趋于渐近值θmax=63.435°,与阶数无关.使用非傍轴高斯光束代替傍轴高斯光束作为理想光束,研究了非傍轴FG光束的M2因子,并与传统定义的M2因子作了比较.在非傍轴范畴,非傍轴FG光束的M2因子不仅与阶数N有关,而且与w0/λ有关.按照定义,当w0/λ→0时,非傍轴FG光束的M2因子不等于0,对阶数N=1, 2, 3时,M2因子分别趋于0.913,0.882和0.886.当N→∞时,M2因子取最小值M2min=0.816. 相似文献
182.
This paper reports that the m-plane GaN layer is grown on (200)-plane LiAlO2 substrate by metal-organic chemical wpour deposition (MOCVD) method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer's thickness. The high transmittance (80%), sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate. 相似文献
183.
Homo-apioneplanocin A was efficiently synthesized via stereoselective hydroxymethylation, regio- and chemoselective hydroboration, and chemoselective oxidation as key steps from d-ribose. 相似文献
184.
185.
具有某种断面的半群的研究进展 总被引:1,自引:0,他引:1
本文综述了几类具有特殊断面的半群的近期研究结果。在介绍逆半群和正则半群的一般结构之后,概述了具有逆断面的正则半群的结构和同余格的研究成果。总结了作为逆断面的推广的可裂断面,纯正断面,正则^*-断面和恰当断面。提出了可以进一步研究的重要的问题。 相似文献
186.
Software failures have become the major factor that brings the system down or causes a degradation in the quality of service. For many applications, estimating the software failure rate from a user's perspective helps the development team evaluate the reliability of the software and determine the release time properly. Traditionally, software reliability growth models are applied to system test data with the hope of estimating the software failure rate in the field. Given the aggressive nature by which the software is exercised during system test, as well as unavoidable differences between the test environment and the field environment, the resulting estimate of the failure rate will not typically reflect the user‐perceived failure rate in the field. The goal of this work is to quantify the mismatch between the system test environment and the field environment. A calibration factor is proposed to map the failure rate estimated from the system test data to the failure rate that will be observed in the field. Non‐homogeneous Poisson process models are utilized to estimate the software failure rate in both the system test phase and the field. For projects that have only system test data, use of the calibration factor provides an estimate of the field failure rate that would otherwise be unavailable. For projects that have both system test data and previous field data, the calibration factor can be explicitly evaluated and used to estimate the field failure rate of future releases as their system test data becomes available. Copyright © 2002 John Wiley & Sons, Ltd. 相似文献
187.
The dielectric responses (i.e. the refractive indices and the second order nonlinear susceptibilities) of all orthorhombic rare earth molybdates have been studied on the basis of the relationship between dielectric responses and the average atomic number of constituent atoms of crystals. Both the linear and second order nonlinear optical responses at 1.064 μm decrease with increasing atomic number from La to Lu. 相似文献
188.
Bond covalency and valence of elements in HgBa2Can−1CunO2n+2+δ (n=1, 2, 3, 4) were calculated and their relationship with Tc was discussed. For both oxygen and argon annealed samples, the results indicated that with the increase of n, the trend of bond covalency of Hg-O and Cu-O was the same or opposite compared with that of superconducting temperature. This may suggest that the magnitudes of Cu-O and Hg-O bond covalency are important in governing the superconducting temperature. For the highest Tc sample, Hg had the lowest valence, implying that lower valence of Hg was preferred in order to produce higher Tc. For fixed n, the valence of Cu in oxygen annealed samples was larger than that in argon annealed samples, indicating that oxygen annealed samples produced more carriers than argon annealed samples. 相似文献
189.
Electrical impedance measurements of Na3H(SO4)2 were performed as a function of both temperature and frequency. The electrical conductivity and dielectric relaxation have been evaluated. The temperature dependence of electrical conductivity reveals that the sample crystals transformed to the fast ionic state in the high temperature phase. The dynamical disordering of hydrogen and sodium atoms and the orientation of SO4 tetrahedra results in fast ionic conductivity. In addition to the proton conduction, the possibility of a Na+ contribution to the conductivity in the high temperature phase is proposed. The frequency dependence of AC conductivity is proportional to ωs. The value of the exponent, s, lies between 0.85 and 0.46 in the room temperature phase, whereas it remains almost constant, 0.6, in the high-temperature phase. The dielectric dispersion is examined using the modulus formalism. An Arrhenius-type behavior is observed when the crystal undergoes the structural phase transition. 相似文献
190.
Monte Carlo simulation within the grand canonical ensemble, the histogram reweighting technique, and finite size scaling analysis are used to explore the phase behaviour of heteronuclear dimers, composed of A and B type atoms, on a square lattice. We have found that for the models with attractive BB and AB nearest-neighbour energy, uBB=uAB=−1, and for non-repulsive energy between AA nearest-neighbour sites, uAA<0, the system belongs to the universality class of the two-dimensional Ising model. However, when uAA>0, the system exhibits a non-universal critical behaviour. We have evaluated the dependences of the critical point characteristics on the value of uAA. 相似文献