Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer

The influence of high temperature buffer layers on the structural characteristics of GaN grown by hydride vapour phase epitaxy on sapphire was investigated. Strain relaxation as well as mismatch-induced defect reduction in thick GaN layers grown on AlN buffer was microscopically identified using cathodoluminescence and micro-Raman spectroscopy in cross-section of the films. The results were correlated with photoluminescence and Hall-effect data of layers with different thicknesses. These relaxation processes were suggested to account for the specific defect distribution in the buffers revealed by high-resolution X-ray diffraction and transmission electron microscopy.     

Thermally induced stress in GaN layers with regard to film coalescence

Thermally induced plane stress in GaN layers of different thicknesses, grown by metalorganic vapour phase epitaxy on sapphire, is investigated. Thin layers, characterized by isolated grains, are found to be stress-free. With increasing layer thickness, however, grains start to coalesce and stress can build up when the samples are cooled down following growth. As soon as the coalescence process is completed and a compact film has been formed, a maximum stress level is reached which does not further increase for still thicker layers. Therefore, it is proposed that grain edges enable non-compact films to elastically relieve in-plane stress.     

Temperatures, pressures and stresses during laser shock processing

Mathematical models are developed to calculate the temperatures, pressures and stresses during laser shock processing for time-modulated (ramp-up, ramp-down and rectangular) laser pulses. Three different shock processing configurations are also considered: non-ablative exposure, ablative exposure and confined ablation with coating. The results for iron show that the plasma pressure reaches an average value of 9 GPa in direct ablation configuration and plays a dominant role for all three types of laser pulses. In the case of confined geometry, the plasma pressure reaches an average value of 20 GPa. All calculated pressures and stresses exceed the yield strength of the workpiece, indicating plastic deformation. It is also shown that pulses with short rise times yield higher plasma pressures.     

Evaluation of elastic compensation using elastic/plastic rotating circular disk problems

A version of elastic compensation is evaluated in the context of stress and deformation analysis of elastic/plastic rotating circular disks of both constant and variable thicknesses undergoing small deflections. An iterative incremental method is combined with finite difference methodology to generate information about the entire quasistatic loading histories of such disks. The evaluation process involves comparison of representative numerical results with corresponding predictions existing in the literature.     

Static analysis of functionally graded beams using higher order shear deformation theory

Displacement field based on higher order shear deformation theory is implemented to study the static behavior of functionally graded metal–ceramic (FGM) beams under ambient temperature. FGM beams with variation of volume fraction of metal or ceramic based on power law exponent are considered. Using the principle of stationary potential energy, the finite element form of static equilibrium equation for FGM beam is presented. Two stiffness matrices are thus derived so that one among them will reflect the influence of rotation of the normal and the other shear rotation. Numerical results on the transverse deflection, axial and shear stresses in a moderately thick FGM beam under uniform distributed load for clamped–clamped and simply supported boundary conditions are discussed in depth. The effect of power law exponent for various combination of metal–ceramic FGM beam on the deflection and stresses are also commented. The studies reveal that, depending on whether the loading is on the ceramic rich face or metal rich face of the beam, the static deflection and the static stresses in the beam do not remain the same.     

Influence of strain on growth mode and electro-optical properties of high-brightness InGaN-LEDs on SiC

We present a detailed study, on the influence of buffer strain on the MOVPE crystal growth mode in the QW active layer of high-brightness InGaN LEDs on SiC substrate. While highly strained buffers are related to InGaN QWs with homogeneous In-distribution, low In-concentration and reduced quantum efficiency, buffers with reduced strain are shown to induce InGaN-QW growth with a dot-like In-distribution, locally high In-concentration and good quantum efficiency. Using an optimised buffer technology, we developed extremely bright InGaN QW-LEDs with a brightness of more than 7 mW (at 460 nm and 20 mA) in a 5 mm radial lamp, good wavelength stability, low forward voltage, high ESD-stability and low ageing.     

Vibration analysis of axisymmetric functionally graded viscothermoelastic spheres简

The present study focuses on the analysis of free vibrations of axisymmetric functionally graded hollow spheres. The material is assumed to be graded in radial di- rection with a simple power law. Matrix Frrbenious method of extended power series is employed to derive the analytical solutions for displacement, temperature, and stresses. The dispersion relations for the existence of various types of pos- sible modes of vibrations in the considered hollow sphere are derived in a compact form. In order to explore the character- istics of vibrations, the secular equations are further solved by using fixed point iteration numerical technique with the help of MATLAB software. The numerical results have been presented graphically for polymethyl methecrylate materials in respect of natural frequencies, frequency shift, inverse quality factor, displacement, temperature change, and radial stress.     

Microstructural characteristics and crystallographic evolutions of Ga-doped ZnO films grown on sapphire substrates at high temperatures by RF magnetron sputtering

The microstructural characteristics and crystallographic evolutions of Ga-doped ZnO (GZO) films grown at high temperatures were examined by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The GZO films with various film thicknesses were grown on (0 0 0 1) Al₂O₃ substrates at 750 °C by RF magnetron sputtering using a 2 wt% Ga-doped ZnO single target. The (0 0 0 2) ZnO peaks in the XRD patterns shifted to a higher angle with increasing film thickness and an additional (1 0 1¯ 1) ZnO peak was observed in the final stage of film growth. HRTEM showed the epitaxial growth of GZO films in the initial growth stage and the formation of surface protrusions in the intermediate stage due to elastic relaxation. The surface protrusions consisted of {1 0 1¯ 1}, {1 0 1¯ 3}, and {0 0 0 2} planes. After the surface protrusions had formed, a GZO film with many c-axis tilted grains formed due to plastic relaxation, where the tilted grain boundaries had an angle of 62° to the substrate. The formation of the protrusions and c-axis tilted grains was closely related to the strain status of the film induced by Ga incorporation, high-temperature growth and a high film thickness.     

竖向均布荷载作用在地基内部时的土中应力公式

建筑物基础一般都是埋入地基中，且有一定深度，而目前土中应力计算所常依据的布西奈斯克解却是假定荷载地表面导出的。本文以半无限体内受竖向力作用的明德林公式为根据，通过积分而首次完整地推导出竖向矩形均布荷载作用在地基内部上的土中应力分量解析表达式，并与布氏公式进行比较，说明其应用范围，以便于工程设计人员在设计时使用。     

Effect of the rotation on a non-homogeneous infinite cylinder of orthotropic material

The present investigation is concerned with a study effect of non-homogeneous on the elastic stresses in rotating orthotropic infinite circular cylinder subjected to certain boundary conditions. Closed form stress solutions are obtained for rotating orthotropic cylinder with constant thickness for three cases: (1) a solid cylinder; (2) cylinder mounted on a circular rigid shaft; and (3) cylinder with a circular hole at the center. Analytical expressions for the components of the displacement and the stress in different cases are obtained. The effect of the rotation and non-homogeneity on the displacement and stress are studied. Numerical results are given and illustrated graphically for each case is considered. The effects rotating and non-homogeneity are discussed. Comparisons are made with the results predicted in the presence and absence of rotation.