Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0–

We have calculated the strain distribution and electronic structures in stacked InAs/GaAs quantum dots (QDs) with the dot spacing 6–. We used the elastic continuum theory for the strain distribution, and the 8-band k·p theory for the electronic structures. For the triply stacked QDs, the light-hole (LH) component of the hole ground state increases with decreasing the dot spacing. The LH component in the columnar QD (dot spacing ) reaches 21.1% which is 4.8 times larger than that in the single QD due to the reduction of the biaxial strain. Further increase of the LH component (up to 28.6%) is obtained in the fivefold-stacked columnar QD. This result suggests a possibility of increase in the TM-mode transition in the columnar QDs.     

Bending of an elastoplastic strip with isotropic and kinematic hardening

Summary  We propose an exact analysis for finite bending of a compressible elastoplastic strip with combined hardening at a given stretch normal to the bending plane. We apply the self-consistent eulerian rate-type elastoplastic model based on the logarithmic rate, in conjunction with a Tresca-type loading function. Utilizing the maximum circumferential stretch at the outer surface as an independent parameter, we derive exact analytic expressions for the bending angle, the bending moment, the outer and inner radii, the radii of the two elastic-plastic interfaces and the circumferential stretches at these two interfaces, as well as the stress distributions in every current cross section. In particular, we establish an explicit relation between the two circumferential stretches at the two elastic-plastic interfaces, and we show that this relation is universal for all cases of hardening. We show also that the maximum and minimum circumferential stretches at the outer and inner surfaces obey a reciprocal relation in the course of both elastic and elastic-plastic deformations. Received 4 June 2002; accepted for publication 14 November 2002 This research was carried out under financial support from the German Science Foundation (DFG) (Contract No.: Br. 580/26-2) and from Alexander von Humboldt Foundation. We wish to express our sincere gratitude to these Foundations.     

Stability of an hexagonal array of coherently strained conical islands against Ostwald ripening

We present a linear stability analysis of an hexagonal array of coherently strained islands against the exchange of material between islands. Surprisingly, ultra-dense arrays are found to be metastable due to the short-range stabilizing effect of elastic interactions which overcome the destabilizing contribution of surface energy. Mean-field simulations are used to investigate the ripening kinetics of local volume defects in arrays which are found to equilibrate through island volume oscillations. Simulations of global perturbations directly verify the existence of the metastable regime and confirm the nature of the most unstable mode as derived from the stability analysis for sub-critical island coverage.     

Carrier dynamics in strain-induced InGaAsP/InP quantum dots

Carrier dynamics of strain-induced InGaAsP/InP quantum dots (QDs) is investigated. In this structure, self-assembled InAs islands on the surface act as stressors and create a lateral confinement potential in the near surface InGaAsP/InP quantum well. Photoluminescence (PL) measurements reveal that decreasing the distance from the QD to the surface significantly diminishes the QD–PL intensity, presumably due to surface states of the InAs islands. Moreover, time-resolved measurements show a faster decay of the QD–PL with decreasing distance. To analyze the carrier dynamics, rate equation model is applied and surface state-related transitions are taken into account. The model is found to agree with measurements, and thus provides a possible explanation for the observed temporal behavior of the carriers.     

p-version hybrid/mixed finite element method

In this paper, the p-version hybrid/mixed finite element formulation using the Hu–Washizu principle is presented. The shape functions are assumed to be hierarchical for the displacement variables. The stresses and the strains are interpolated using Legendre polynomials so that the computation of the stiffness matrix will be simplified. For 2-D problems, the higher-order hierarchical shape functions start following the 8-node, quadrilateral shape functions. The geometry mapping of each element is also performed using an 8-node parametric mapping. Numerical examples for a plate with a circular hole and circular inclusion are included.     

Reflectance difference spectroscopy during CdTe/ZnTe interface formation

We have investigated the first stages of epitaxial growth of CdTe on ZnTe and ZnTe on CdTe with reflectance difference (RD) spectroscopy. Spectroscopic RD data show strong optical anisotropy responses at the critical points of the bulk dielectric function at the E₀, E₁ and E₁+Δ₁ interband transitions of ZnTe and CdTe, respectively, which indicate that anisotropic in-plane strain occurs during epitaxial growth. Kinetic RD data taken at the E₁ transition of the respective material exhibit with an accuracy of 1 ML the onset of the formation of misfit dislocations for these material systems.     

光纤Bragg光栅热敏力敏效应研究及应用探讨

本文报道了光纤Bragg光栅热敏力敏效应的实验研究结果,测量所得的光纤Bragg光栅温度系数和应力系数分别为6.84×10^-6/℃和7.27×10^-6/gf,与理论值6.85×10^-6/℃和7.32×10^-6/gf符合得很好.在20～180℃和0～50gf的温度应力测量范围内,光纤Bragg光栅透射谱中心波长移动量同温度应力具有良好的线性关系.基于光纤Bragg光栅的热敏力敏效应,本文还讨论了光纤Bragg光栅温度应变传感器实用化时必须首先考虑的一些关键问题.     

焊接接头和U型试样中的氢分布

本文作者利用自行研制的激光测氢装置,测量了焊接接头和U型试样中的氢分布,并且推导了U型试样弯曲部分(塑性变形区)的应变、残余应力计算公式。结果表明:在焊接接头中,1.沿熔深方向上,氢分布是不均匀的。最高氢含量在熔合线附近;2.氢的具体分布情况,取决于焊缝金属和母材原始含氧量,以及金相组织。在U型试样中,1.计算应变的公式和应力公式可以用来计算无明显反弹的U型试样弯曲部分的应变量和残余应力值。1Cr18Ni9Ti(C.R.)钢的F=990MPa、n=0.146;2.氢分布明显受应力和应变的影响。应力、应变值愈大,含氢量愈高。     

Effects of temperature and thermo-mechanical couplings on material instabilities and strain localization of inelastic materials

A general framework for rate-independent, small-strain, thermoinelastic material behaviour is presented, which includes thermo-plasticity and -damage as particular cases. In this context, strain localization and the development of material instabilities are investigated to highlight the roles of thermal effects and thermomechanical couplings. During a loading process, it is shown that two conditions play the essential roles and correspond to the singularity of the isothermal and the adiabatic acoustic tensors. Under quasi-static conditions, strain localization (in a classical sense) may occur when either of these two conditions is met. It involves a jump in temperature rate in the latter case, whereas temperature rate remains continuous in the former, but a discontinuity in the spatial derivatives of the heat flux must occur. This is consistent with the condition of stationarity of acceleration waves, which are shown to be homothermal and propagate with a velocity related to the eigenvalues of the isothermal acoustic tensor. A linear perturbation analysis further clarifies the above findings. In particular, for a quasi-static path of an infinite medium, failure of positive definiteness of either of the acoustic tensors corresponds to bifurcations in wave-like modes of arbitrary wave-length and infinite rate of growth. Under dynamic conditions, unbounded growth of perturbations is associated only to the short wavelength regime and corresponds to divergence growth or flutter phenomena relative to the isothermal acoustic tensor.     

正交试验设计在麦白霉素高产菌株选育中的应用

本文应用正交试验设计改进了麦白霉素的生产工艺，在四个关键环节上选出了比对照组高出７００μ／ｍｌ以上的高产稳定菌株。该法使试验次数减少，选育周期缩短，既节省了人力物力和降低了生产成本，又增加了麦白霉素药粉的产量，取得了可观的经济效益。