最大边连通和super-边连通超图的充分条件

设H是连通超图。若超图H的边连通度等于其最小度,则称H是最大边连通的。若超图H的每个最小边割总是由关联于某个最小度顶点的边集所构成,则称H是super-边连通的。首先给出一致线性超图是最大边连通超图的度序列条件。其次,给出一致线性超图是super-边连通超图的度条件。这些结果分别推广了Dankelmann和Volkmann（1997）以及Hellwig和Volkmann（2005）在图上的相关结论。     

HT-7超导托卡马克边界等离子体参量及其涨落的实验研究

利用径向可移动朗缪尔三探针和马赫探针对HT-7超导托卡马克边界等离子体参量及其涨落进行了空时空分辨测量.给出了欧姆放电及其与低杂波电流驱动共同作用下边界等离子体电位φ_p、电子温度T_e和电子密度n_e及其涨落的径向分布.实验表明,在限制器附近,存在一由E_r×B确定的极向旋转速度剪切层.在剪切层内,T_e和n_e分布较陡,且φ_p,T_e和n_e的相对涨落水平下降明显.这说明剪切层对边界区的等离子体涨落具有抑制作用.低杂波驱动使径向电场梯度变陡,从而使剪切程度加深但对剪切层宽度无影响.此外,测量表明等离子体环向速度马赫数M_φ存在径向梯度.环向流的这种径向梯度可能是形成径向电场所需的平均极向流的一种重要驱动源 关键词： 托卡马克 边界涨落 低杂波驱动     

基于智能手机和Matlab的居家悬滴法表面张力测量实验

本文基于智能手机和Matlab软件设计了一种居家环境下可实现的悬滴法水滴表面张力测量实验.借助智能手机拍照功能获得水滴图像,利用Matlab进行边缘检测及计算,从而得出表面张力系数.对于不同清晰度的情况提出了对应的分析和处理方法,实验结果表明该方法稳定可靠.为后疫情时代开展居家大学物理实验教学提供了一个典型案例.     

一些图的Mycielski图的均匀邻强边染色

如果图G的一个正常边染色满足相邻点的色集不同,且任意两种颜色所染边数目相差不超过1,则称为均匀邻强边染色,其所用最少染色数称为均匀邻强边色数.本文得到了路、圈、星和扇的Mycielski图的均匀邻强边色数.     

路的字典积的邻和可区别边染色

图G的正常[k]-边染色σ是指颜色集合为[k]={1,2,…,k}的G的一个正常边染色.用w_σ（x）表示顶点x关联边的颜色之和,即w_σ（x）=∑_e∋x σ（e）,并称w_σ（x）关于σ的权.图G的k-邻和可区别边染色是指相邻顶点具有不同权的正常[k]-边染色,最小的k值称为G的邻和可区别边色数,记为χ'_∑（G）.现得到了路P_n与简单连通图H的字典积P_n[H]的邻和可区别边色数的精确值,其中H分别为正则第一类图、路、完全图的补图.     

Topological and Nontopological Edge States Induced by Qubit-Assisted Coupling Potentials

In the usual Su–Schrieffer–Heeger (SSH) chain, the topology of the energy spectrum is divided into two categories in different parameter regions. Here, the topological and nontopological edge states induced by qubit-assisted coupling potentials in circuit quantum electrodynamics (QED) lattice modeled as a SSH chain are studied. It is found that, when the coupling potential added on only one end of the system raises to a certain extent, the strong coupling potential will induce a new topologically nontrivial phase accompanied by the appearance of a nontopological edge state, and the novel phase transition leads to the inversion of odd–even effect directly. Furthermore, the topological phase transitions when two unbalanced coupling potentials are injected into both ends of the circuit QED lattice are studied, and it is found that the system exhibits three distinguishing phases with multiple flips of energy bands. These phases are significantly different from the previous phase induced via unilateral coupling potential due to the existence of a pair of nontopological edge states. The scheme provides a feasible and visible method to induce different topological and nontopological edge states through controlling the qubit-assisted coupling potentials in circuit QED lattice both in experiment and theory.     

Partitioning series-parallel multigraphs into ν *-excluding edge covers

We prove that, for any given vertex ν* in a series-parallel graph G, its edge set can be partitioned into κ = min{κ′(G) + 1, δ(G)} subsets such that each subset covers all the vertices of G possibly except for ν*, where δ(G) is the minimum degree of G and κ′(G) is the edge-connectivity of G. In addition, we show that the results in this paper are best possible and a polynomial time algorithm can be obtained for actually finding such a partition by our proof.     

晶粒棱长、尺寸与拓扑学特征之间关系的Monte Carlo仿真研究

采用Potts模型Monte Carlo方法研究了晶粒棱长、尺寸与拓扑学特征之间的统计关系.结果表明,晶粒棱长与晶粒面数之间呈线性统计关系,并且平均N面体晶粒模型和Poisson-Voronoi组织均支持该结论.不同时刻的晶粒长大仿真数据表明,在准稳态晶粒长大阶段晶粒棱长的分布具有自相似性.个体晶粒的平均棱长随晶粒面数（或晶粒尺寸）的增加而逐渐增大,这说明一些理论模型中采用的“不同面数的晶粒平均棱长均相等”的假设具有局限性.仿真数据和纯铁实验数据均表明,晶粒尺寸与晶粒面数之间的统计关系表现为一条单调递增的凸曲线. 关键词： 晶粒棱长 晶粒尺寸 拓扑学 Monte Carlo仿真     

Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostructure

This paper reports on a comparative study of the spatial distributions of the electrical, optical, and structural properties in an AlGaN/GaN heterostructure. Edge dislocation density in the GaN template layer is shown to decrease in the regions of the wafer where the heterostructure sheet resistance increases and the GaN photoluminescence band-edge energy peak shifts to a high wavelength. This phenomenon is found to be attributed to the local compressive strain surrounding edge dislocation, which will generate a local piezoelectric polarization field in the GaN layer in the opposite direction to the piezoelectric polarization field in the AlGaN layer and thus help to increase the two-dimensional electron gas concentration.     

Halin-图的邻强边染色

图G(V,E)的正常κ-边染色f叫做图G(V,E)的κ-邻强边染色当且仅当任意uv∈E(G)满足f[u]≠f[v],其中,f[u]={f(uw)|uw∈E(G)},称f是G的κ-临强边染色,简记为κ-ASEC.并且x′_as(G)=min{k|κ-ASEC of G}叫做G(V,E)的邻强边色数.本文研究了△(G)≥5的Halin-图的邻强边色数.