The role of OH ions in the stabilization of F colour centres in LiF

Thermally Stimulated Depolarisation Current (TSDC) and optical methods are applied to a range of alkali-fluoride crystals in order to establish a model for the stable F ₂ ⁺ - like colour centres in LiF:OH^-. The experimental results for LiF:OH^- suggest that the OH^- defects are partially destroyed under ionising irradiation or during crystal growth. The low-temperature dielectric relaxation signals in LiF:OH^- and LiF:Mg²⁺,OH^- are attributed to highly interacting hydroxide ions and products of their destruction located in extended lattice defects. In LiF:OH^-, in contrast to other alkali halides, the results advocate for a defect-structure model, which considers a neutral defect (ND, probably O₂ or H₂) sited at the anion vacancy of the O^2--V _a ⁺ dipole and which possibly is the “nucleus” for the F ₂ ⁺ centre. The proposed F ₂ ⁺ (ND, O^-) model seems to better explain the dielectric results, compared to the older F ₂ ⁺ (O^2-) and F ₂ ⁺ (O^-) models. The estimate for the electric dipole moment derived from the experimental TSDC bands, gives a value for the F ₂ ⁺ - like centre in LiF:OH^- between those of the F ₂ ⁺ (O^-) and F ₂ ⁺ (O^2-) defects, in good agreement with the proposed F ₂ ⁺ (ND,O^-) model. The reduction of the activation energy barrier of the (re)orientation process of the Mg²⁺V _c ^- (OH^-) complexes in LiF:Mg²⁺,OH^-, and the low-temperature shift of their TSDC band, compared to the single Mg ₂ ⁺ V _c ^- peak in LiF:Mg²⁺, are tentatively ascribed to an increase in the crystal-lattice parameters owing to the presence of OH^- and/or products of its destruction. Received 31 August 2001 / Received in final form 30 March 2002 Published online 9 July 2002     

Non-local order in Mott insulators,duality and Wilson loops

It is shown that the Mott insulating and superfluid phases of bosons in an optical lattice may be distinguished by a non-local ‘parity order parameter’ which is directly accessible via single site resolution imaging. In one dimension, the lattice Bose model is dual to a classical interface roughening problem. We use known exact results from the latter to prove that the parity order parameter exhibits long range order in the Mott insulating phase, consistent with recent experiments by Endres et al. [M. Endres, M. Cheneau, T. Fukuhara, C. Weitenberg, P. Schauß, C. Gross, L. Mazza, M.C. Bañuls, L. Pollet, I. Bloch, et al., Science 334 (2011) 200]. In two spatial dimensions, the parity order parameter can be expressed in terms of an equal time Wilson loop of a non-trivial U(1)$U\left(1\right)$ gauge theory in 2+1$2+1$ dimensions which exhibits a transition between a Coulomb and a confining phase. The negative logarithm of the parity order parameter obeys a perimeter law in the Mott insulator and is enhanced by a logarithmic factor in the superfluid.     

基于Add-drop型微环谐振腔的硅基高速电光调制器设计

相比于传统的All-pass型微环谐振腔硅基电光调制器, Add-drop型微环谐振腔可提供更多的设计自由度, 使调制器在不改变杂质掺杂浓度的情况下就能在调制带宽和消光比性能上获得均衡考虑. 本文设计了基于Add-drop型微环谐振腔的高速、且在低调制电压下实现大消光比的硅基电光调制器, 所用微环谐振腔的半径仅仅为20 μm. 重点分析了直波导与微环谐振腔的耦合对调制器性能的影响, 发现较小的Drop端耦合系数有利于消光比的提高, 但是不能同时达到最佳的调制带宽, 因此设计上存在一个带宽和消光比性能上的折中考虑. 根据优化设计的结果进行了实际器件的制作和测试. 静态光谱测试表明, 在3 V反向偏置电压的作用下, 调制器的消光比最大可达12 dB. 动态电光响应测试中, 在仅仅1.2 V的信号幅值电压下测得了8 Gbps数据传输速率的清晰眼图. 关键词： 电光调制器 绝缘体上的硅 微环谐振腔 载流子色散效应     

A scheme for a topological insulator field effect transistor

We propose a scheme for a topological insulator field effect transistor. The idea is based on the gate voltage control of the Dirac fermions in a ferromagnetic topological insulator channel with perpendicular magnetization connecting to two metallic topological insulator leads. Our theoretical analysis shows that the proposed device displays a switching effect with high on/off current ratio and a negative differential conductance with a good peak to valley ratio.     

Chiral universality class of normal-superconducting and exciton condensation transitions on surface of topological insulator

New two-dimensional systems such as the surfaces of topological insulators (TIs) and graphene offer the possibility of experimentally investigating situations considered exotic just a decade ago. These situations include the quantum phase transition of the chiral type in electronic systems with a relativistic spectrum. Phonon-mediated (conventional) pairing in the Dirac semimetal appearing on the surface of a TI causes a transition into a chiral superconducting state, and exciton condensation in these gapless systems has long been envisioned in the physics of narrow-band semiconductors. Starting from the microscopic Dirac Hamiltonian with local attraction or repulsion, the Bardeen–Cooper–Schrieffer type of Gaussian approximation is developed in the framework of functional integrals. It is shown that owing to an ultrarelativistic dispersion relation, there is a quantum critical point governing the zero-temperature transition to a superconducting state or the exciton condensed state. Quantum transitions having critical exponents differ greatly from conventional ones and belong to the chiral universality class. We discuss the application of these results to recent experiments in which surface superconductivity was found in TIs and estimate the feasibility of phonon pairing.     

Investigation of laterally single-diffused metal oxide semiconductor (LSMOS) field effect transistor

We propose a distinct approach to implement a laterally single diffused metal-oxide-semiconductor (LSMOS) FET with only one impurity doped p-n junction. In the LSMOS, a single p-n junction is first created using lateral dopant diffusion. The channel is formed in the p region of the p-n junction and the n region acts as the drift region. Two distinct metals of different work function are used to form the “n⁺” source/drain regions and “p⁺” body contact using the charge plasma concept. We demonstrate that the LSMOS is similar in performance to a laterally double diffused metal-oxide-semiconductor (LDMOS) although it has only one impurity doped p-n junction. The LSMOS exhibits a breakdown voltage of ∼50.0 V, an average ON-resistance of 48.7 mΩ-mm² and a peak transconductance of 53.6 μS/μm similar to that of a comparable LDMOS.     

Growth mode and novel structure of ultra-thin KCl layers on the Si(1 0 0)-2 × 1 surface

This study investigates ultra-thin potassium chloride (KCl) films on the Si(1 0 0)-2 × 1 surfaces at near room temperature. The atomic structure and growth mode of this ionic solid film on the covalent bonded semiconductor surface is examined by synchrotron radiation core level photoemission, scanning tunneling microscopy and ab initio calculations. The Si 2p, K 3p and Cl 2p core level spectra together indicate that adsorbed KCl molecules at submonolayer coverage partially dissociate and that KCl overlayers above one monolayer (ML) have similar features in the valance band density of states as those of the bulk KCl crystal. STM results reveal a novel c(4 × 4) structure at 1 ML coverage. Ab initio calculations show that a model that comprises a periodic pyramidal geometry is consistent with experimental results.     

The limitimg behaviour of the well width of a quantum two-dimensional metal–insulator transition

Metal–Insulator transition using an exact two-dimensional (2D) dielectric function is investigated for a shallow donor in an isolated well of a GaAs/Ga_1−xAl_sAs superlattice system within the effective mass approximation. Vanishing of the donor ionization energy as a function of well width and the donor concentration suggests that a phase transition is not possible even below a well width of 10 Å, supporting the scaling theory of localization. The effects of Anderson localization, exchange and correlation in the Hubbard model are included in a simple way. The relationship between the present model and the Mott criterion in terms of Hubbard model is also brought out. The critical concentration appears to be enhanced when a random distribution of impurities is considered. The limiting behaviour of the well width for a quantum 2D well is brought out. A simple expression is derived for a Mott constant in 2D, a*N_c^1/2 exp (9.86 exp (−L/a*))=0.123, where N_c is the critical concentration per area. Results are compared with the existing data available and discussed in the light of existing literature.     

Numerical study of charge ordering in NaxCoO2

A simple microscopic model of charge ordering in the Na_xCoO₂ system is presented. The model takes into account the interplane interactions between the ordered Na ions and d electrons from the CoO₂ layers as well as the nearest-neighbor intraplane Coulomb interactions between d electrons. It is shown that a driving force of charge ordering in the CoO₂ layers is the interplane interaction that alone is able to describe various types of inhomogeneous charge ordering (e.g., the striped phases) as well as to predict correctly the conducting properties of the system.     

Carriers recombination processes in charge trapping memory cell by simulation

We have evaluated the effects of recombination processes in a charge storage layer, either between trapped electrons and trapped holes or between trapped carriers and free carriers, on charge trapping memory cell＇s performances by numerical simulation. Recombination is an indispensable mechanism in charge trapping memory. It helps charge convert process between negative and positive charges in the charge storage layer during charge trapping memory programming/erasing operation. It can affect the speed of programming and erasing operations.