Magnetic and transport properties of bilayered manganites La1.2Sr1.8Mn2-xGaxO7（x=0,0.08）

The magnetic and electrical properties of nonmagnetic Ga +3 ion substitution for Mn site are investigated in the bilayer manganite La 1.2 Sr 1.8 Mn 2 O 7.When the Mn is substituted by Ga,the ferromagnetic property obviously weakens,the magnetic transition temperature decreases and a spin-glass behaviour occurs at low temperature.Meanwhile,doping causes the resistivity to dramatically increase,the metal-insulator transition temperature to disappear,and a greater magneto-resistance effect to occur at low temperature.These effects result from the fact that Ga substitution dilutes the magnetic active Mn-O-Mn network and weakens the double exchange interaction,and further suppresses ferromagnetic ordering and metallic conduction.     

填充式方钴矿化合物CeOs4Sb12近藤相互作用的非弹性中子散射研究

CeOs₄Sb₁₂晶体中由于导电电子与Ce³⁺ 4f¹电子之间存在c-f杂化作用导致费米面附近存在能量间隙.这种c-f近藤相互作用和能量间隙是理解CeOs₄Sb₁₂物理性质，如近藤绝缘体行为、Ce³⁺磁矩在低温下猝灭以及重费米性等电、磁性质的关键.当用LAM-D中子谱仪对粉末CeOs₄Sb₁₂进行测量时，可以得到不同温度下CeOs₄Sb₁₂的非弹性中子散射谱.结果表明CeOs₄Sb₁₂中存在近藤相互作用，其作用强度为3.1 meV，证实了CeOs₄Sb₁₂为近藤绝缘体.中子测量得出CeOs₄Sb₁₂德拜温度为317 K. 关键词： 非弹性中子散射 填充式方钴矿 近藤绝缘体     

Observation of insulating–insulating monoclinic structural transition in macro‐sized VO2 single crystals [Phys. Status Solidi RRL 5, No. 3, R107–R109 (2011)]

In our article, we reported the observation of monoclinic M2 to M1 structural phase transition in VO₂ single crystal near the temperature of ～49 °C. However, the re‐examination of Laue patterns reveals that previously defined monoclinic M1 and M2 phases can be interpreted as monoclinic M2 and triclinic T phases instead. Careful experimental geometry calibration and further refinement of the lattice parameter ratios and angles show that monoclinic M2 and triclinic T phases fit better with the experimental data. On the other hand, our previous misidentification of the insulating phases does NOT affect the conclusions of our article. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

一种电力架空线垂度的简算方法

以输配电工程中带有绝缘子的电力架空线为研究对象, 简化绝缘子的力学模型, 采用纵横弯 曲理论推导了钢芯铝铰线的挠度方程, 计算了在自重和温度载荷共同作用下的架空线垂度和 水平张力. 计算结果表明, 文中算法简单有效, 架空线跨距和温度等是架空线垂度的主要 影响因素. 架空线垂度对温度的平均变率为2.55mm/$^{\circ}$C; 当跨距减 小1%时, 垂度增加近60%.     

EuS/Ta异质结的极大磁电阻效应

在铁磁/超导异质结中,铁磁体的交换场通过近邻效应将导致超导体准粒子态密度的塞曼劈裂.基于该效应,在外磁场不强的情况下,通过外加磁场可以有效地调节铁磁/超导界面处的交换作用,从而实现超导体在正常态和超导态之间转换,产生极大磁电阻.本文利用脉冲激光沉积方法制备了EuS/Ta异质结并研究了其电磁特性.Ta在3.6 K以下为超...     

一维C_(36)聚合物的C_(36)分子间的电-声相互作用

在用半经验自洽场晶体轨道方法计算能带结构的基础上，并在平均场近似和形变势理论框架下，研究了四种一维线性 C36聚合物模型的 C36分子间电 声耦合常数及其对超导相变和金属 绝缘体相变的影响 .计算结果表明，一维线性 C36聚合物的 C36分子间电 声耦合常数极小，对超导相变和金属 绝缘体相变的影响可以完全忽略 .     

强流二极管绝缘体滑闪监测及其影响

 以闪光二号加速器为研究平台, 建立了微分环阵列和Rogowski线圈同时监测二极管电流的方法,监测了二极管绝缘体表面的滑闪现象。根据电流探头测量结果的差异,分析了绝缘体滑闪对电子束流参数的影响。二极管绝缘体出现滑闪,位置附近的微分环波形严重畸变,其它位置的微分环和Rogowski线圈测量结果基本一致。采用距离滑闪位置较远的微分环结果处理二极管束流参数,相对于不出现滑闪时的结果,束流强度和总能量没有明显的变化。绝缘体滑闪沿面局部放电,能量损失较小,尚未对电子束流造成较大影响。     

Modification of the electrical properties in Fe-Al2O3 granular thin films due to increased bias potential

We studied the electrical properties in Fe-Al₂O₃ granular films when the injected direct current or bias potential are varied in the low-field regime (eΔV?k_BT). Measurements of the electrical resistance as a function of temperature and applied bias at different temperatures were performed. We found that the electrical properties are best described using variable range hopping. The variation in resistance showed unexpected characteristics in distinct regions of potential. These regions of potential could be due to modification of the electronic localization length. We have shown that the electrical resistance decreases when the applied bias and/or current increases. We associate this behavior of the resistance with the activation of new electronic paths. The total resistance of our samples is reduced as additional parallel electronic paths are formed.     

二维拓扑绝缘体退相干效应研究

拓扑绝缘体是当前凝聚态物理研究的热点.退相干效应对该体系的影响的研究不仅有重要的理论意义,而且也是实现未来量子器件的不可或缺的前期工作.文章作者从理论上研究了退相干对二维拓扑绝缘体特别是量子自旋霍尔效应的影响.研究结果表明,作为量子自旋霍尔效应的标志的量子化纵向电阻平台对不破坏自旋记忆的退相干效应(普通退相干)不敏感,但却对破坏自旋记忆的退相干效应(自旋退相干)非常敏感.因此,该量子化平台只能在尺寸小于自旋退相干长度的介观样品中存在,从而解释了量子自旋霍尔效应实验中所观测到的结果(见Science,2007,318:766).同时,文章作者还定义了一个新的物理量,即自旋霍尔电阻,并发现该自旋霍尔电阻也有量子化平台.特别是该量子化平台对两种类型的退相干都不敏感.这说明在宏观样品中也能观测到自旋霍尔电阻的量子化平台,因此更能全面地反映量子自旋霍尔效应的拓扑特性.