Atomic short-range order in CuMn alloys

The establishment of atomic short-range order (SRO) has been investigated in CuMn alloys (5, 8,13,16,20 at. % Mn) by measurement of the electrical resistivity during isochronal and isothermal annealing. An increasing degree of SRO is accompanied by a reduction of resistivity; this effect increases with Mn concentration. For 8,13 and 16 at. % Mn SRO kinetics turn out to deviate significantly from single exponential behavior with a maximum at 13 at. % Mn, whereas at 5 and 20 at. % Mn SRO is adjusted in a single exponential process. For data analysis three methods are used: a sum of two and three exponentials as well as a log-normal spectrum of relaxation times. The strong interaction between second-nearest-neighbor atoms in CuMn seems to be essential for SRO kinetics but of minor importance for the value of SRO-induced resistivity change.     

Defect structure and migration in Fe3O4

We present the results of a computer simulation study of the defect formation and migration energies in Fe₃O₄. Calculated Frenkel and Schottky energies are found to be similar in magnitude and both are considerably reduced by screening due to electron redistribution around the charged-defect species. The calculations also suggest that cation diffusion is mainly effected by a colinear interstitialcy mechanism at low P_o2 and by a simple octahedral vacancy mechanism at higher P_o2.     

Effect of the annealing environment on the optical properties of ZnO/GaAs grown by MOCVD

The optical properties of ZnO grown on (1 0 0) GaAs substrate using metalorganic chemical vapor deposition are investigated by photoluminescence (PL) spectroscopy. Postgrowth annealing in nitrogen and oxygen was performed for different times and temperatures in order to incorporate As from the substrate into the ZnO thin films. The PL spectra of the samples annealed in different ambients reveal that the effect of As diffusion into the ZnO thin films is more pronounced when the annealing is performed in oxygen at 550 °C. The 11 K PL spectra show the appearance of a transition at ∼3.35 eV after annealing in oxygen at 550 °C for 1 h. A further increase in the annealing temperature leads to the disappearance of this line, while for annealing times longer than 2 h at 550 °C, it is no longer prominent. The increase in intensity of this new transition is also accompanied by the enhancement of radiative centers related to structural defects, such as the stacking fault-related transition at 3.31 eV and the Y-line. Temperature dependent PL illustrates the excitonic nature of the new transition at ∼3.35 eV, which is therefore assigned to (A⁰, X) transition, where the acceptor is possibly the 2V_Zn-As_Zn complex, with an activation energy E_A in the range of 160-240 meV. Furthermore, the enhancement of the radiative centers related to structural defects is regarded as evidence that As atoms tend to segregate in the vicinity of structural defects to relieve local strain.     

Rotational symmetry breaking in small-area circular vertical cavity surface emitting lasers

We investigate theoretically the dynamics of three low-order transverse modes in a small-area vertical cavity surface emitting laser. We demonstrate the spontaneous breaking of axial symmetry of the transverse field distribution in such a device. In particular, we show that if the linewidth enhancement factor is sufficiently large dynamical regimes with broken axial symmetry can exist up to very high diffusion coefficients ~ 10 μm²/ns.     

The simulation of XYZ-spin chain in coupled cavities

We simulated anisotropic XYZ-spin chain with an array of coupled cavities, each of which contains one 4-level atom. The anisotropic parameters of the effective Hamilton can be tuned by controlling the external lasers. The validity of our approximations is confirmed via a numerical simulation.     

N-取代酰胺-二苯酮体系光化夺氢反应活泼自由基的ESR研究

本文用自由基捕捉剂2,3,5,6-四甲基亚硝基苯(ND)及苯亚甲基叔丁基氮氧化物(PBN)与ESR相结合的方法研究了十二种取代酰胺RC₆H₄NHC(0)CH₃(R-CH₃、Cl、Br、H、NO₂)、C₆H₅N(R)C(0)CH₃(R=CH₃、C₂H₅)及HC(0)NR₂(R-CH₃、C₂H₅)与二苯酮光化夺氢反应中的活泼自由基。结果表明: 1.对于RC₆H₄NHC(0)CH₃,二苯酮夺取氮上H形成R-C₆H₄NC(0)CH₃自由基。 2.对C₆H₅N(R)C(0)CH₃及HC(O)NR₂,二苯酮夺取与羰基相连的甲基氢、羰基上氢及与N相连碳上的氢分别形成 C₆H₅N(R)C(0)CH₂、C(0)NR₂、C₆H₅N(CHR')C(0)CH₃及。     

取代环戊二烯锆、铪络合物光解活泼自由基的ESR研究

本文用自旋捕捉术技与ESR相结合的方法,研究取代环成二烯锆、铪络物(RC₅H₄)₂ZrCl₂(R=H,CH₃,C₃H₇,C₄H₉,C₅H₁₁,C₆H₁₁)及(RC₅H₄)₂HfCl₂(R=CH₃,C₂H₅,C₃H₇)光解的活泼自由基。结果表明,取代环成二烯锆、铪络合物与取代环戊二烯钛结合物光解机理相同,即光解初级过程是M-(RC₅H₄)(M=Ti,Zr,Hf)π键的均裂。其差别在于RCpMCl₂(M=Zr,Hf)可为PBN及ND捕获,并后者的加合物表现出氯核的分裂。     

Determining the stress intensity factor by using the principle of minimum potential energy

Expressing the total potential energy of the system of a cracked body П by Williams’ infinite series solution of stress and displacement components containing coefficients A_n(n = 1,2,...), we obtain a set of simultaneous linear equations of unknown coefficients A_n by using the principle of minimum potential energy. When the set of equations is solved, the stress intensity factor K₁ can be easily determined. It is equal to √2πaA₁ Take a sample plate as an example. A single-edgc-cracked plate under tension, with the ratio of crack length to the width of the plate being 0.5 and the ratio of half plate height to the width of the plate being 2.0 and 2. 5, has been calculated. Only 20 - 30 coefficients are taken, and the errors in stress intensity factors are within 5%.     

电解沉积的分形维数与ZnSO_4溶液浓度的关系

用电沉积方法得到了不同浓度硫酸锌电解液的分形凝聚图像;进行图像处理,得到了其分形维数与浓度的关系曲线;用粒子扩散限制凝聚模型解释了此关系     

硅基稀土热扩散法初探

稀土元素在我国有丰富的贮量．近年来,稀土元素在各种新科技领域中得到不断的开发和利用．各类稀土功能材料在发光和光通信领域中正展现巨大的应用潜力［１］．稀土磁光薄膜材料是优良的记录介质;稀土Ｅｒ由于其特殊的电子结构,已用来制造掺铒光纤激光器和光纤放大器［２］;掺铒硅还可制造发光谱线单一的发光器件［３］,这为实现人们所期待的硅基光电集成提供了有益途径．此外,基于对掺铒硅荧光发射衰减时间的分析,可用于制造温度传感器［４］．因此,稀土在共价半导体材料如Ｓｉ、ＧａＡｓ中的行为研究日益受到重视．但这些工作主要…