Coral reef-like polyanaline nanotubes prepared by a reactive template of manganese oxide for supercapacitor electrode

Coral reef-like PANI nanotubes composed of nanopaticles were successfully synthesized by a reactive template of manganese oxide.The structure was characterized by using SEM,TEM,and FT-IR,and the supercapacitive behaviors of these nanotubes were investigated with cyclic voltammetry（CV）,and charge-discharge tests,respectively.A maximum specific capacitance of 533 F/g could be achieved in 1mol/L aqueous H₂SO₄ with the potential range of -0.2 to 0.8 V（vs.the saturated calomel electrode） in a half-cell setup configuration for PANI electrode,suggesting its potential application in the electrode material for electrochemical capacitors.     

Engineered-membranes: A novel concept for clustering of native lipid bilayers

A strategy for clustering of native lipid membranes is presented. It relies on the formation of complexes between hydrophobic chelators embedded within the lipid bilayer and metal cations in the aqueous phase, capable of binding two (or more) chelators simultaneously Fig. 1. We used this approach with purple membranes containing the light driven proton pump protein bacteriorhodopsin (bR) and showed that patches of purple membranes cluster into mm sized aggregates and that these are stable for months when incubated at 19 °C in the dark. The strategy may be general since four different hydrophobic chelators (1,10-phenanthroline, bathophenanthroline, Phen-C10, and 8-hydroxyquinoline) and various divalent cations (Ni²⁺, Zn²⁺, Cd²⁺, Mn²⁺, and Cu²⁺) induced formation of membrane clusters. Moreover, the absolute requirement for a hydrophobic chelator and the appropriate metal cations was demonstrated with light and atomic force microscopy (AFM); the presence of the metal does not appear to affect the functional state of the protein. The potential utility of the approach as an alternative to assembled lipid bilayers is suggested.     

Co-ordination stoichiometry,edge shift and effective nuclear charge: A novel correlation

Summary K-absorption edge shifts of the absorbing atom in its complexes have been correlated with the effective nuclear charge on the central metal ion, overall electronegativity difference between the nearest neighbours in the complexes and the ionic radius of the central metal ion; a linear correlation has been observed among them, the data subjected to the method of least squares indicated that the correlation is genuine.

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Riassunto Gli slittamenti dell’orlo di assorbimentoK dell’atomo assorbente nei suoi complessi sono stati correlati con la carica nucleare efficacie sullo ione metallico centrale, con la differenza di elettronegatività generale tra vicini prossimi nei complessi e col raggio ionico dello ione metallico centrale; una correlazione lineare è stata osservata tra loro, i dati soggetti al metodo dei minimi quadranti hanno indicato che la correlazione è genuina.

     

Accurate measurement of thermal expansion of solids between 77 K and 350 K by 3-terminal capacitance method

The construction of a three-terminal capacitance cell and a bath type cryostat to measure thermal expansion of solids in the temperature range 77 K to 350 K is described. Calculation of the thermal expansion coefficients by using spline approximation is discussed along with the various errors involved in the measurement. The capacitance cell is calibrated by using aluminium and germanium as standard reference materials. The cell has an accuracy of 4% in the measurement of thermal expansion coefficient and a resolution of 1 Å change in length of sample of length 1 cm.     

二氧化锰纳米束超级电容器电极材料制备及分析

由聚苯胺捆绑二氧化锰纳米束作为超级电容器的电极材料,具有良好的赝电容特性。聚苯胺良好的导电性影响二氧化锰纳米束的电化学性能,使其阻抗变小,稳定性增强。     

电源频率可调的单相旋转磁场实验仪

设计了电源频率可调的单相交流电产生的旋转磁场实验仪,应用该仪器可测量电感、损耗电阻、转速等     

Interface states in Al_2O_3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor(MOS) structures. Two types of device structures, namely, the recessed gate structure(RGS) and the normal gate structure(NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ETin both devices have been determined. Furthermore,the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching(RIE).     

PN结电容与正向直流偏压的关系

半导体PN结具有电容的性质．在正向直流偏压下,理论计算表明,PN结扩散电容的对数与正向偏压成正比．实验发现,当正向偏压小于30mV时,这种线性关系是成立的;当正向偏压大于30mV时,会偏离这种线性关系．由于PN结还具有电阻特性,对交流信号的相位有影响．随着正向偏压增大,交流信号的相位变化出现一极值．如果将PN结等效为一个电容和一个电阻并联,就可以定性解释这种变化关系．     

Spin-peierls transition in dimerized stacks of anion-radical salt (N-Me-2,5-di-Me-Pz)(TCNQ)2, (Pz is pyrazine)

An anion-radical salt (ARS) (N-Me-2,5-di-Me-Pz)(TCNQ)₂, where Pz is pyrazine, was synthesized and its crystal structure was resolved. X-ray diffraction experiments on single crystals were performed. Heat capacity was measured in the temperature range from 2 to 300 K. Magnetisation and magnetic susceptibility were measured in the temperature range from 2 to 300 K and the low-temperature part was measured in magnetic fields from 5 mT to 5 T. The experimental results were explained in terms of dimerized Heisenberg spin chain model. Numerical calculations were performed and compared with experimental data.     

Crystal electric field excitations in ferromagnetic CeTX compounds

A ferromagnetic ground state was identified for the compounds CeCuGe (T_C=10 K), CeCuSi (T_C=15 K) [F. Yang, et al., J. Appl. Phys. 69 (1991) 4705] and CeAuGe (T_C=10 K) [R. Pottgen, J. Magn. Magn. Mater. 152 (1996) 196]. The observed saturation magnetic moment values at low temperatures for all three compounds are considerably less than the theoretically expected value g_JJ=2.14μ_B for the free Ce³⁺ ion involving the entire six-fold J=5/2 multiplet, and thus provide a first indication of partial lifting of the f-electron level degeneracy in these compounds. Specific heat data yield crystal electric field (CEF) excitation energies (Δ_Sch) equivalent to 140 K for CeCuGe, 110 K for CeCuSi and 280 K for CeAuGe. To confirm the presence of CEF excitations directly, we have carried out inelastic neutron scattering (INS) measurements on all three compounds, using the HET spectrometer at ISIS Facility. Here, we present a detailed analysis of the INS spectra of CeCuSi on the basis of a CEF model and the detailed analysis of the INS of the other two compounds will be reported elsewhere.