$lt;i$gt;γ$lt;/i$gt;射线总剂量辐照效应对应变Sip型金属氧化物半导体场效应晶体管阈值电压与跨导的影响研究

分析了双轴应变Si p型金属氧化物半导体场效应晶体管(PMOSFET)在γ射线辐照下载流子的微观输运过程, 揭示了γ射线的作用机理及器件电学特性随辐照总剂量的演化规律, 建立了总剂量辐照条件下的双轴应变Si PMOSFET 阈值电压与跨导等电学特性模型, 并对其进行了模拟仿真. 由仿真结果可知, 阈值电压的绝对值会随着辐照总剂量的积累而增加, 辐照总剂量较低时阈值电压的变化与总剂量基本呈线性关系, 高剂量时趋于饱和; 辐照产生的陷阱电荷增加了沟道区载流子之间的碰撞概率, 导致了沟道载流子迁移率的退化以及跨导的降低. 在此基础上, 进行实验验证, 测试结果表明实验数据与仿真结果基本相符, 为双轴应变Si PMOSFET辐照可靠性的研究和应变集成电路的应用与推广提供了理论依据和实践基础. 关键词： 应变Sip型金属氧化物半导体场效应晶体管 总剂量辐照 阈值电压 跨导     

Blue-phase liquid crystal display with high dielectric material

A blue-phase liquid crystal display (BPLCD) with low operating voltage and high transmittance is demonstrated by using a high dielectric material, which is used as an insulation layer or protrusion fixed on the pixel and common electrodes in in-plane switching (IPS) mode. The operating voltage is reduced to about 14 V and the transmittance is improved for the BPLCD with high dielectric constant protrusion. Compared with the conventional protrusion electrode structure, the proposed protrusion can make manufacturing process simple and easy because the electrode has no complex shape. The results will be significant in designing optimal BPLCDs.     

Theoretical analysis of magnetic sensor output voltage

The output voltage is an important parameter to determine the stress state in magnetic stress measurement, the relationship between the output voltage and the difference in the principal stresses was investigated by a comprehensive application of magnetic circuit theory, magnetization theory, stress analysis as well as the law of electromagnetic induction, and a corresponding quantitative equation was derived. It is drawn that the output voltage is proportional to the difference in the principal stresses, and related to the angle between the principal stress and the direction of the sensor. This investigation provides a theoretical basis for the principle stresses measurement by output voltage.     

Breakpoint detection of heating wire in wind blade moulds using infrared thermography

In order to manufacture the fibre glass wind blades, one kind of mould embedded with heating wire is used not only for making numerous ‘copies’ of the original sample, and also heating the mould to a certain temperature for curing. The heating wire is embedded in fibre glass as a sandwich structure, and it may break after a long time usage at high temperatures. In this study, a high voltage discharging (HVD) circuit is used to trigger HVD at the breakpoint, which generates heat and therefore causes temperature increase at the corresponding front surface, one infrared camera is used to monitor the temperature evolution. It successfully and quickly detects breakpoints in spar moulds.     

Energy spectrum of multi-radiation of X-rays in a low energy Mather-type plasma focus device

The multi-radiation of X-rays was investigated with special attention to their energy spectrum in a Mather-type plasma focus device （operated with argon gas）. The analysis is based on the effect of anomalous resistances. To study the energy spectrum, a four-channel diode X-ray spectrometer was used along with a special set of filters. The filters were suitable for detection of medium range X-rays as well as hard X-rays with energy exceeding 30 keV. The results indicate that the anomalous resistivity effect during the post pinch phase may cause multi-radiation of X-rays with a total duration of 300 ± 50 ns. The significant contribution of Cu-Kα was due to the medium range X-rays, nonetheless, hard X-rays with energies greater than 15 keV also participate in the process. The total emitted X-ray energy in the forms of Cu-K and Cu-K/3 was around 0.14 ± 0.02 （J/Sr） and 0.04 ±0.01 （J/Sr）, respectively. The total energy of the emitted hard X-ray （〉 15 keV） was around 0.12± 0.02 （J/Sr）.     

Characteristics of pentacene organic thin film transistor with top gate and bottom contact

High performance pentacene organic thin film transistors (OTFT) were designed and fabricated using SiO₂ deposited by electron beam evaporation as gate dielectric material. Pentacene thin films were prepared on glass substrate with S--D electrode pattern made from ITO by means of thermal evaporation through self-organized process. The threshold voltage V_TH was --2.75± 0.1V in 0---50V range, and that subthreshold slopes were 0.42± 0.05V/dec. The field-effect mobility (μ_EF) of OTFT device increased with the increase of V_DS, but the μ_EF of OTFT device increased and then decreased with increased V_GS when V_DS was kept constant. When V_DS was --50V, on/off current ratio was 0.48× 10⁵ and subthreshold slope was 0.44V/dec. The μ_EF was 1.10cm²/(V.s), threshold voltage was --2.71V for the OTFT device.     

Correlation between formation conditions and breakdown voltage of anodic oxide films on aluminum

Two series of samples were investigated: a) aluminum films with a sublayer of tantalum; b) industrial aluminum alloys AMg-2m; D16; AMc; AD-1n. The optimum composition of re-anodizing electrolyte was chosen on the basis of a solution of citric acid and ethylene glycol. The results of investigations of the sparking voltage at re-anodizing for various aluminum alloys and thicknesses of primary porous oxide are presented. The analytical dependence of breakdown voltage value on forming voltage value for alloy AD-1n was obtained. The original design of re-anodizing cell allowing increase of the sparking voltage was developed.     

测三极管特性的改进电路

指出了电子线路基础实验教材中所给出的测三极管特性的电路所存在的问题,提出了合理的电路.     

感应叠加过程行波分析和模拟

 采用变换矩阵为研究工具对感应叠加过程中行波的传播、透射、反射进行了分析，得到了和集中参数分析一致的稳定解，给出了电压随时间变化的细节。建立了3.5 MeV注入器脉冲功率源和感应叠加结构的电路模型，得到的感应腔压模拟波形和实验波形基本一致，结合行波分析法基本解释了腔压波形和Blumlein线输出波形之间较大差异的成因，阴极叠加电压的模拟也反映了实验中主脉冲后的反射波形。     

高性价比电子标准电池

为了避免化学标准电池由于自身特点在使用中存在诸多不便,采用集成温度传感器LM334设计制作了电子标准电池,同时在设计电路中还采用了两级稳压措施以保证标准电池输出的稳定性.