A comparison of electron ionization mass spectra obtained at 70 eV,low electron energies,and with cold EI and their NIST library identification probabilities

Electron ionization (EI) mass spectra of 46 compounds from several different compound classes were measured. Their molecular ion abundances were compared as obtained with 70‐eV EI, with low eV EI (such as 14 eV), and with EI mass spectra of vibrationally cold molecules in supersonic molecular beams (Cold EI). We further compared these mass spectra in their National Institute of Standards and Technology (NIST) library identification probabilities. We found that

1. Low eV EI is not a soft ionization method, and it has little or no influence on the molecular ion relative abundances for large molecules and those with weak or no molecular ions.
2. Low eV EI for compounds with abundant or dominant molecular ions in their 70 eV mass spectra results in the reduction of low mass fragment ions abundances thereby reducing their NIST library identification probabilities thus rarely justifies its use in real‐world applications.
3. Cold EI significantly enhances the relative abundance of the molecular ions particularly for large compounds; yet, it retains the low mass fragment ions; hence, Cold EI mass spectra can be effectively identified by the NIST library.
4. Different standard EI ion sources provide different 70 eV EI mass spectra. Among the Agilent technologies ion sources, the “Extractor” exhibits relatively abundant molecular ions compared with the “Inert” ion source, while the “High efficiency source” (HES) provides mass spectra with depleted molecular ions compared with the “Inert” ion source or NIST library mass spectra.

These conclusions are demonstrated and supported by experimental data in nine figures and two tables.     

电爆炸箔断路开关的理论和实验研究

 采用金属箔电爆炸过程的二维数值计算模型，对含电爆炸金属箔断路开关的电感储能脉冲功率调节系统进行了数值计算。以此为基础，研制出了一种低电感型的电爆炸箔断路开关，并以4μF/75kV脉冲电容器组作为初级能源，13Ω电阻作为负载进行实验研究。研究结果表明：在负载上可获得约250kV，脉宽大于400ns的脉冲电压。     

Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

In order to investigate of cobalt-doped interracial polyvinyl alcohol （PVA） layer and interface trap （Dit） effects, A1/p- Si Schottky barrier diodes （SBDs） are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carded out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or er-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance （Rs）, and interfacial layer. Both the real and imaginary parts of dielectric constant （er and err） and electric modulus （Mr and Mrr）, loss tangent （tan~）, and AC electrical conductivity （aac） are investigated, each as a function of frequency and applied bias voltage. Each of the M~ versus V and Mrr versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance （C） and conductance （G/w） values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of A1/Co-doped PVA/p-Si （MPS） type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance （CLF-CHF） method.     

Filling the Charge–Discharge Voltage Gap in Flexible Hybrid Zinc-Based Batteries by Utilizing a Pseudocapacitive Material

The high charge–discharge voltage gap is one of the main bottlenecks of zinc–air batteries (ZABs) because of the kinetically sluggish oxygen reduction/evolution reactions (ORR/OER) on the oxygen electrode side. Thus, an efficient bifunctional catalyst for ORR and OER is highly desired. Herein, honeycomb-like MnCo₂O_4.5 spheres were used as an efficient bifunctional electrocatalyst. It was demonstrated that both ORR and OER catalytic activity are promoted by Mn^IV-induced oxygen vacancy defects and multiple active sites. Importantly, the multivalent ions present in the material and its defect structure endow stable pseudocapacitance within the inactive region of ORR and OER; as a result, a low charge–discharge voltage gap (0.43 V at 10 mA cm⁻²) was achieved when it was employed in a flexible hybrid Zn-based battery. This mechanism provides unprecedented and valuable insights for the development of next-generation metal–air batteries.     

Toward a universal quantum QSPR operator

This article presents a discussion about the formalism, which might be associated to a general Quantum quantitative structure–properties relations operator, appearing in a Boltzmann‐like exponential form, which is based in turn on the definition of the concept of thermal voltage, applied to thermally scaled electronic density functions. Three practical numerical examples are presented, corresponding to the calculation of the polarization angle in assorted chiral molecules, the estimation of fish toxicity for perchlorobenzene within the set of chlorobenzenes and a typical quantum QSAR study on the popular Cramer steroid set.     

Solution-Processable Low Voltage Organic Transistors of Thieno[3,2-b]thiophene-Based Conducting Polymer

A low-operating voltage and high performance polymeric field effect transistors using octadecylphosphonic acid-treated high-k AlOx and HfO₂ hybrid dielectrics were demonstrated. High-k metal oxide hybrid dielectrics were prepared by oxygen plasma treatment of deposited Al film for AlOx and by spin coating of solution-processable HfO₂ sol-gel solution for HfO₂ in combination with phosphoric acid-based self-assembled monolayer (SAM), resulting in high capacitance (10 nF/cm² for SiO₂, 600 nF/cm² for AlOx and 580 nF/cm² for HfO₂). With phosphoric acid-based SAM on high-k metal oxide and thermal annealing of thieno[3,2-b]thiophene-based conducting polymer, the device performance was significantly enhanced. The highest mobility of the transistors using ODPA-treated AlOx as a gate dielectric is 2.3 × 10^?2 cm² V^?1 s^?1 in the saturation region with the source-drain of ?2 V. In ODPA-treated HfO₂ hybrid dielectric, the saturated mobility is 1.1 × 10^?2 cm² V^?1 s^?1 and the threshold voltage was measured to be ?0.31 V, which is at least one order lower than SiO₂ hybrid dielectric (?3 V).     

STABILITY ANALYSIS OF A CAPACITIVE FGM MICRO-BEAM USING MODIFIED COUPLE STRESS THEORY

Based on the Modified Couple Stress Theory,a functionally graded micro-beam under electrostatic forces is studied.The FGM micro-beam is made of two materials and material properties vary continuously along the beam thickness according to a power-law.Dynamic and static pull-in voltages are obtained and it is shown that the static and dynamic pull-in voltages for some materials cannot be obtained using classic theories and components of couple stress must be taken into account.In addition,it is shown that the values of pull-in voltages depend on the variation through the thickness of the volume fractions of the two constituents.     

Microscopic Interface Between Two Immiscible Electrolytes: A Parallelism to an Ultramicroelectrode

Abstract

Current-potential response of a small interface formed between two immiscible solutions of electrolytes is examined. The diameter of the contact area made in a thin glass wall separating two solvents is approximately 130 μm. Ion transport across the nitrobenzene-water interface is studied by addition of probe semi-hydrophobic ions such as tetramethylammonium, tetraethylammonium, picrate, choline and dodecylsulfate to either aqueous or nonaqueous phase. The voltammetric behavior observed with the microinterface generally resembles that of a solid microelectrode of a similar radius. The contribution of ohmic drop becomes less significant with decrease of the interface area. This phenomenon permits voltammetric and amperometric measurements without using a potentiostat, and the solvent resistance is of a lesser problem.