超流研究的历史回顾

回顾了超流发现的历史，介绍了超流的一些现象、理论以及新近的研究结果。强调指出超流与超导一样是一种宏观量子现象。     

Gd2O3:Eu纳米晶的制备及其光谱性质研究

以EDTA为络合剂，聚乙二醇为有机分散剂，用络合溶胶—凝胶法制备出Gd2O3:Eu纳米晶。用XRD，SEM，X—射线能量色散谱仪(EDS)，荧光分光光度计等分析手段对Gd2O3:Eu的纳米晶结构、形貌、组分的均匀性以及发光特性进行了研究。结果表明：EDTA—M凝胶仅在800℃焙烧即可得到颗粒细小、组分均匀、纯立方相的Gd2O3:Eu纳米晶，颗粒基本呈球形，粒径为30nm左右。对样品的激发光谱、发射光谱测定表明：Gd2O3:Eu纳米晶在269nm光激发下发红光，发射光谱谱峰在611nm，与体材料基本相同；激发光谱中电荷迁移带(CTB)明显红移，从体材料的255nm移至269nm，移动了约14nm；猝灭浓度从体材料的6％提高到8％。     

Electron–hole recombination luminescence in LiYF4:U single crystal

Photoluminescence (PL), photostimulated luminescence (PSL), thermally stimulated luminescence (TSL) and electron paramagnetic resonance (EPR) studies were carried out on LiYF₄:U⁴⁺ and pure LiYF₄ crystals. The PL and EPR investigations have identified the presence of Eu³⁺, Tb³⁺ and Gd³⁺ ions in both of these crystals possibly due to their existence in the starting materials. The luminescence observed during afterglow, PSL and TSL revealed that emission occurs at wavelength positions 382, 413, 437 and 544 nm, which are characteristic of Tb³⁺ ions. The present investigations using PSL and TSL in combination with PL studies before and after gamma irradiation have revealed that selective energy transfer to Tb³⁺ ions occurs during electron–hole recombination processes like PSL and TSL. Even though other luminescent ions (U⁴⁺ and Eu³⁺) are present in the system and U⁴⁺/U³⁺ ions are participating in electron capture/release processes, the selective energy transfer results in Tb³⁺ ions acting as luminescence centers.     

关于Pn3的优美性

设G(V,E)是一个简单图,对自然数k,当V(G^k)=V(G,E(G^k)=E(G)∪{uv|d(u,v)=k},则称图G^k为k-次方图,本文证明了图P_n³的优美性。     

Luminescence enhancement by hydrogenation of Si:Er,O

Erbium (Er)- and oxygen (O)-doped Cz–Si was additionally doped with hydrogen, using plasma enhanced chemical vapour deposition. Photoluminescence (PL) spectra show a large enhancement especially for samples treated with solid phase epitaxy before hydrogenation and annealing at 900°C later. Secondary ion mass spectroscopy measurements give evidence for an enhanced diffusion of O and Er at this temperature towards the surface. Etching shows that the PL does not stem from the heavily doped surface layer but from a deeper region with lower Er concentration. This conclusion is supported by the appearance of the so-called “cubic” centre with low solubility. Comparing the PL yield of the hydrogenated samples to that of samples with similar Er volume concentration but without hydrogenation still gives a large enhancement. We thus conclude that hydrogen can enhance the solubility of the cubic centre in Si:Er,O.     

火焰原子吸收法测定霞石中的氧化钾和氧化钠

本方法用于测定霞石中的钾、钠，主要通过在溶样时加入氢氟酸除去二氧化硅，调整溶液中钾、钠的含量，消除互相之间的干扰，加入氯化铯消除电离因素的干扰，提高了分析结果的准确性和重现性，使测定结果更接近化学分析值。回收率为99．2％-101．6％。     

4英寸热氧化硅衬底上磁性隧道结的微制备

就如何在4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究，并对磁性隧 道结的磁电性质及其工作特性进行了初步测量和讨论.利用现有的光刻设备和工艺条 件在4英寸热氧化硅衬底上直接制备出的磁性隧道结，其结电阻与面积的积 矢的绝对误差在10% 以内，隧穿磁电阻的绝对误差在7% 以内，样品的磁性隧道结性质具有较好的均匀性和一致性，可以满足研制磁随机存储器存储单元演示器件的基本要求. 关键词： 磁性隧道结 隧穿磁电阻 磁随机存储器 4英寸热氧化硅衬底     

Magnetic phases in Mn<Subscript>1</Subscript>_<Subscript>x</Subscript>Fe<Subscript>x</Subscript>WO<Subscript>4</Subscript> studied by neutron powder diffraction

The magnetic structures of Mn_1-xFe_xWO₄ with x = 0.0, 0.16, 0.21, 0.225, 0.232, 0.24, 0.27, 0.29, and 1.0 were refined from neutron powder diffraction data. The magnetic phase diagram could be completed in the coexistence range of different magnetic structures up to x = 0.29. For the magnetic state at 1.5 K a commensurate antiferromagnetic structure with a propagation vector = (±1/4, 1/2, 1/2) was found for x ⩽ 0.22 while the magnetic spins order with = (1/2, 0, 0) for x ≥ 0.22. In the latter phase, additionally, weak magnetic reflections indexed to an incommensurate ordering with = (- 0.214, 1/2, 0.457) occur in the diffraction pattern up to x = 0.29 indicating the occurence of a reentrant phase. For 0.12 ⩽ x ⩽ 0.29 the low temperature phases are separated from a magnetic high temperature phase showing only magnetic reflections indexed to a spin arrangement with = (1/2, 0, 0). The magnetic phase diagram is discussed qualitatively considering random superexchange between the statistically distributed Mn²⁺- and Fe²⁺-ions in the coexistence range 0.12 ⩽ x ⩽ 0.29 of different magnetic structures related to those of pure MnWO₄ and FeWO₄. Received 9 October 2002 Published online 14 March 2003     

Second harmonic generation in In2O3–SiON films doped by Al and Sn

Photoinduced optical and second-order non-linear optical effects in the interfaces separating In₂O₃–SiON (O/N ratio equals 1) films doped with A1, Sn and glass substrates were investigated using the photoinduced optical second harmonic generation. The photoinduced effective second-order optical susceptibility d_eff (at λ=1.76 μm) shows a good correlation with the linear optical susceptibility, particularly with the shift of the absorption edge. The maximal response of the photoinduced optical response signal was observed for the pump–probe delaying time of 34 ps. The performed experimental measurements indicate that the observed effects are mainly caused by the interface potential gradients on the border glass–In₂O₃–SiON film and by additional polarization due to insertion of the Al and Sn atoms. The observed phenomenon may be proposed as a sensitive tool for investigation of thin semiconducting interfacial layers and simultaneously such films may be used as materials for non-linear optical devices.