基于六角氮化硼二维薄膜的忆阻器

报道了一种基于多层六角氮化硼(h-BN)二维薄膜的忆阻器件.该器件不需要电预处理过程,且具有自限流的双极性阻变行为;具有较好的抗疲劳性和较长的数据保持时间.该器件在脉冲编程条件下具有模拟转变特性,即在连续的电压脉冲下器件的电阻态能被连续地调控,使得该器件能够模仿神经网络系统中的神经突触权重变化行为.综上所述,基于多层h-BN的忆阻器具有应用在非易失性存储和神经计算中的潜力.     

Characteristics and mechanism of nano‐polycrystalline La2O3 thin‐film resistance switching memory

We investigated the characteristics and the mechanism of Pt/La₂O₃/Pt resistance switching memory with a set of measurements. The La₂O₃ films were determined as nano‐poly‐crystalline (diameter of the nanocrystals 5–10 nm) by XRD and HRTEM analysis. The Pt/La₂O₃/Pt device exhibited excellent resistive switching properties, including low switching voltage (<2 V), large low/high resistance ratio (>10⁸), and good cycling endurance property. The conduction mecha‐ nisms of the Pt/La₂O₃/Pt device were revealed with current–voltage characteristics, which are different in the low and high resistance states. Furthermore, XPS analysis and temperature‐dependent resistance measurement in the low resistance state showed that the conducting filaments in the Pt/La₂O₃/Pt device are mainly affected by oxygen defects rather than metallic La. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

La0.5Ca0.5MnO3内禀与界面电脉冲诱导电阻转变效应的比较

一般地,钛矿结构锰氧化物的电脉冲诱导电阻转变(EPIR) 效应源于非内禀界面处的肖特基势垒. 本文采用固相烧结法制备了La_0.5Ca_0.5MnO₃ (LCMO)陶瓷样品, 用四线测量模式对样品电输运性质, 特别对其内禀EPIR效应和忆阻器行为进行了研究. 室温下, 尽管样品在四线测量模式下的I-V特性曲线呈欧姆线性规律, 但在适当的脉冲电压刺激下, 仍能诱导产生明显、稳定的EPIR效应. 通过与二线模式的界面EPIR比较, 发现LCMO内禀EPIR效应具有更小的脉冲临界电压、更好的稳定性和抗疲劳特性, 是稀土掺杂锰氧化物中观察到的一类新颖的EPIR效应. 关键词： 钙钛矿结构锰氧化物 电致电阻效应 电脉冲诱导电阻转变效应 肖特基势垒     

An exact frequency analysis of annular plates with small core having elastically restrained outer edge and sliding inner edge

The present study deals with an exact analysis of free transverse vibrations of annular plates having small core and sliding inner edge and the outer edge being elastically restrained based on classical plate theory. This study focuses mainly on the influence of variations in the elastic restraint parameters on the fundamental frequencies of plate vibration. The natural frequencies for the first six modes of annular plate vibrations are computed for different materials and varying values of the radius parameter and these natural frequencies may correspond to either axisymmetric and/or non-axisymmetric modes of plate vibration. The extensive data of values of fundamental frequency parameter presented in this paper is believed to be of use in the design of acoustic underwater transducers, ocean and naval structures, compressor and pump elements, offshore platforms. These results may serve as bench mark values for researchers to validate their results obtained using approximate numerical methods.     

Graphene resistive random memory — the promising memory device in next generation

Graphene-based resistive random access memory(GRRAM) has grasped researchers' attention due to its merits compared with ordinary RRAM. In this paper, we briefly review different types of GRRAMs. These GRRAMs can be divided into two categories: graphene RRAM and graphene oxide(GO)/reduced graphene oxide(r GO) RRAM. Using graphene as the electrode, GRRAM can own many good characteristics, such as low power consumption, higher density, transparency,SET voltage modulation, high uniformity, and so on. Graphene flakes sandwiched between two dielectric layers can lower the SET voltage and achieve multilevel switching. Moreover, the GRRAM with r GO and GO as the dielectric or electrode can be simply fabricated. Flexible and high performance RRAM and GO film can be modified by adding other materials layer or making a composite with polymer, nanoparticle, and 2D materials to further improve the performance. Above all,GRRAM shows huge potential to become the next generation memory.     

Driving Innovation in Optical Networking: 30 Years of Research and Development Results from Circuit to Packet Transport

Abstract

Over the past 30 years, network applications have changed with the advent of innovative services spanning from high-speed broadband access to mobile data communications and to video signal distribution. To support this service evolution, optical transport infrastructures have changed their role. Innovations in optical networking have not only allowed the pure “bandwidth per fiber” increase, but also the realization of highly dependable and easy-to-manage networks. This article analyzes the innovations that have characterized the optical networking solutions from different perspectives, with a specific focus on the advancements introduced by Alcatel-Lucent's research and development laboratories located in Italy. The advancements of optical networking will be explored and discussed through Alcatel-Lucent's optical products to contextualize each innovation with the market evolution.     

All-optical switching and storage in a four-level tripod-type atomic system

The optical behavior of a four-level tripod-type atomic system in a ring resonator driven by a cavity field and two external coherent fields is studied. It is shown that the atomic response exhibits an ultra-sensitive switch from high absorption to nearly transparency by changing the value of one of the control fields. The optical bistable response can be controlled by means of the external fields. The system can flip from the lower to the upper branch of the hysteresis curve without changing the incident probe. Switching and information storage of a light signal are predicted under appropriate triggering of the auxiliary external optical signals.     

Oxidation of 4H-SiC covered with a SmSix surface alloy

Oxidation of Sm/4H-SiC is studied by X-ray photoemission spectroscopy (XPS) and low energy electron diffraction (LEED). In particular, we report kinetic information from the oxidation of a SmSi_x (1 × 1) surface alloy formed on (0 0 0 1) 4H-SiC. During the initial oxidation of the SmSi_x alloy, a (2 × 2)-LEED pattern is observed. Furthermore, the Sm 2+ valency observed from the clean SmSi_x surface alloy, which is related to surface samarium atoms, disappear at 15 L oxygen exposure. The oxygen atom is consequently deduced to be located at bridge or hollow sites involving one Sm atom. The initial oxidation result in an oxygen deficit SmSiO_x interface oxide, probably as a consequence of the high oxidation temperatures in this work (900-1050 °C). We report that in a prolonged oxidation (longer than 10 kL) a SiO₂ layer forms on top of the samarium silicon oxide interface layer.     

托卡马克等离子体中内部磁扰动的测量研究

热等离子体中内部磁扰动水平可以由逃逸电子输运来确定，逃逸电子输运采用扰动实验和稳态实验等四种不同方法较容易获得某些局域的逃逸扩散系数，首先利用等离子体快速移动实验，测量孔栏上硬X射线通量的变化，获得边缘扩散系数；第二，由微波辐射强度和硬X射线通量(HXR)信号的锯齿振荡的峰值延迟时间得到径向位置某处到孔栏之间平均扩散系数；第三，软X射线(SXR)强度和HXR通量的信号的锯齿振荡的峰值延迟时间给出等离子体芯区外的径向平均扩散系数；第四，由来自孔栏上HXR韧致辐射谱求得逃逸电子平均能量，继而得到逃逸约束时间， 关键词： 逃逸电子输运 扩散系数 内部磁涨落 软X射线(SXR) 硬X射线 (HXR)     

13.9 nm马赫贞德干涉仪用软X射线分束镜研究

 介绍了13.9 nm马赫贞德干涉仪用软X射线分束镜的设计、制备与性能检测。基于分束镜反射率和透过率乘积最大的评价标准,设计了13.9 nm软X射线激光干涉实验用多层膜分束镜。采用磁控溅射方法在有效面积为10 mm×10 mm、厚度为100 nm的Si3N4基底上镀制了Mo/Si多层膜,制成了多层膜分束镜。利用X射线掠入射衍射的方法测量了Mo/Si多层膜的周期。用扩束He-Ne激光束进行的投影成像方法定性分析了分束镜的面形精度,利用光学轮廓仪完成了分束镜面形精确测量。利用北京同步辐射装置测量了分束镜反射率和透射率,在13.9 nm处,分束镜反射率和透过率乘积达4%。使用多层膜分束镜构建了软X射线马赫贞德干涉仪,并应用于13.9 nm软X射线激光干涉实验中,获得了清晰的含有C8H8等离子体电子密度信息的动态干涉条纹。