Computed positron lifetimes in vacancies and vacancy-iron clusters in gold

Annihilation characteristics are calculated for positrons trapped in clean and impurity decorated vacancy clusters in Au. The positron lifetime depends strongly on the structure of the clusters. In a strongly relaxed vacancy cluster, the lifetime can become smaller than the lifetime in a single vacancy. The substitution of some neighbour atoms of a vacancy cluster by Fe atoms has only a minor effect on the positron lifetimes.     

Helium blistering of niobium: Large swelling measurements supporting the gas pressure model

Crystal potentials are usually obtained through a combination of theoretical calculation and the fitting of crystal properties. Because of thermal expansion of the crystal, the equilibrium condition is not satisfied at all temperatures unless the crystal potential is made temperature-dependent. A quasiharmonic potential that satisfies the equilibrium condition at all temperatures is derived from KC1 and used to calculate temperature-dependent defect energies (at constant volume). Other thermodynamic defect parameters are then derived by combining these results with the experimental Gibbs energies. The temperature-dependence of these parameters is displayed.     

Radiation damage by soft β-particles self-irradiation of β-tritiated polystyrene

The effect of self-irradiation of β-tritiated polystyrene under high vacuum at 25°C was studied, and simultaneous random chain scission and cross-linking were observed. Analyses of the gaseous products and the colored polymer residue showed that hydrogen was the only volatile product, while spectroscopic measurements indicated that the coloration was associated with the presence of main-chain double bonds.

G values for hydrogen formation GH₂, cross-linking, G _XL and chain scission, G _CS were obtained as follows: GH₂=0.031; G _CS=0.044; G _XL=0.061. Possible mechanisms of radiation damage are discussed.     

Li-defect interactions in electron-irradiated n-type silicon by EPR measurements

Single crystal silicon, both with and without oxygen, has been diffused with lithium to concentrations ～10¹⁷/cm², irradiated with 1 to 1.5 MeV electrons, and the ensuing defects studies by EPR measurements. The presence of oxygen strongly affects the properties of these defects. Measurements have indicated the presence of two new defects which involve Li-one in O-containing material and one in O-free material. The defects are observed in their electron-filled state, and indicate a net electron spinof ½. The defect spectra disappear (with time) at room temperature, and can be explained by the formation of other Li-involved defects which lie deeper in the energy bandgap and are not visible by EPR. Electron irradiation at 40 °K followed by annealing at higher temperatures show that both EPR defects described above begin to form at about 200 °K and begin to decrease at about 275 °K-just as does the 250 °K reverse annealing observed generally for n-type Si. Based on these data, and the work of others, it is suggested that both defects form as a result of the motion of Si interstitials which produce a (Li-O-interstitial) complex in O-containing Si, and a (Li-interstitial) complex in O-free Si.     

Plasmonic protection of the hot‐electron energy

In the Letter by K. Kempa, the definitions of two auxiliary constants in Eqs. (10) and (11) were incorrectly given by the author. He now wishes to correct these equations. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

悬浮二维晶体材料反射光谱和光致发光光谱的周期性振荡现象

研究了在二氧化硅/硅衬底上制备的悬浮石墨烯以及二硫化钼的反射光谱以及悬浮二硫化钼的光致发光光谱.研究发现:悬浮多层石墨烯的反射光谱表现出明显的振荡现象,并且该振荡具有一定的周期性;振荡周期的大小不依赖于悬浮多层石墨烯的层数,而是随着衬底上沉孔深度(空气层厚度)的增加而减小.利用多重光学干涉模型可以解释这种振荡现象以及振荡周期随沉孔深度改变的变化趋势.该模型计算结果表明,只有当沉孔深度达到微米量级时这种振荡现象才会显著出现;并且可由振荡周期定量地确定出沉孔深度.对于悬浮的二硫化钼样品,其反射光谱和光致发光光谱也出现了类似的振荡现象.这表明这种振荡现象是在各种衬底上悬浮二维材料反射光谱和光致发光光谱的一种普遍性结果,也预示悬浮二维材料器件的电致发光光谱也会出现类似的振荡现象,对悬浮二维晶体材料的物理性质和器件性能研究具有一定的参考价值.     

晶体级联方式的宽带三倍频方案分析

 讨论了入射基频光频谱宽度、两块和频晶体失谐角对KDP晶体Ⅰ/Ⅱ/Ⅱ类角度失谐级联方式的三倍频光功率谱分布的影响,分析了影响三倍频效率的因素。研究结果表明,第二块和频晶体得到的三倍频光的功率谱分布与基频光功率谱分布及失谐角有关,三倍频光频谱宽度近似为基频光的3倍,采用该方案的三倍频可有效抑制由于基频光时间相位调制导致的三倍频光强随时间分布的不均匀,并能有效提高大带宽条件下的三倍频转换效率。同时,采用该方案的三倍频,对级联的两块和频晶体厚度及失谐角调整精度要求不高,在实验上有很大的可操作性。     

宽绝对禁带的一维磁性光子晶体结构

提出了一种具有宽绝对禁带的一维磁性光子晶体结构,该结构由相同的折射率和物理厚度以及不同的波阻抗的两种磁性材料交替组合而成.通过传输矩阵法分析可得,相比于非磁性光子晶体,该光子晶体的禁带对入射角和偏振都不敏感,从而具有更宽的绝对禁带.合适地调节两种磁性材料的参数,增加两者波阻抗的差值,该光子晶体的绝对禁带宽度也相应地增加;调节两种磁性材料的物理厚度,其绝对禁带中心也会随之调整;最后,将两个满足上述条件的一维磁性光子晶体组成异质结构,其第一禁带宽度与禁带中心之间的比值可达到1.41以上.     

Growth of gem-grade nitrogen-doped diamond crystals heavily doped with the addition of Ba（N3）2

Additive Ba(N 3) 2 as a source of nitrogen is heavily doped into the graphite-Fe-based alloy system to grow nitrogendoped diamond crystals under a relatively high pressure (about 6.0 GPa) by employing the temperature gradient method.Gem-grade diamond crystal with a size of around 5 mm and a nitrogen concentration of about 1173 ppm is successfully synthesised for the first time under high pressure and high temperature in a China-type cubic anvil highpressure apparatus.The growth habit of diamond crystal under the environment with high degree of nitrogen doping is investigated.It is found that the morphologies of heavily nitrogen-doped diamond crystals are all of octahedral shape dominated by {111} facets.The effects of temperature and duration on nitrogen concentration and form are explored by infrared absorption spectra.The results indicate that nitrogen impurity is present in diamond predominantly in the dispersed form accompanied by aggregated form,and the aggregated nitrogen concentration in diamond increases with temperature and duration.In addition,it is indicated that nitrogen donors are more easily incorporated into growing crystals at higher temperature.Strains in nitrogen-doped diamond crystal are characterized by micro-Raman spectroscopy.Measurement results demonstrate that the undoped diamond crystals exhibit the compressive stress,whereas diamond crystals heavily doped with the addition of Ba(N 3) 2 display the tensile stress.     

Röntgenographische Strukturuntersuchung geschmolzener Magnesium-Blei Legierungen

Abstract

Um Aufschluß über die Atomanordnung in geschmolzenen Magnesium-Blei Legierungen zu erhalten, wurden rontgenographische Strukturuntersuchungen durchgeführt.