Ultrasonic synthesis of In-doped SnS nanoparticles and their physical properties

Indium (In)-doped Tin (II) Sulfide (SnS) nanoparticles (NPs) were synthesized by an ultra-sonication method and their optical, electrical, dielectric and photocatalytic properties were investigated. XRD patterns of the obtained NPs indicated formation of orthorhombic polycrystalline SnS. Field emission scanning electron microscopy exhibited flower-like NPs with particle sizes below 100 nm for both SnS and In-doped SnS samples. Optical analysis showed a decrease in energy band gap of SnS NPs upon In doping. In addition, electrical results demonstrated p-type nature of the synthesized SnS NPs and enhanced electrical conductivity of the NPs due to increased tin vacancy. Dielectric experiments on SnS NPs suggested an electronic polarizations effect to be responsible for changing dielectric properties of the particles, in terms of frequency. Finally, photocatalytic experiments revealed that high degradation power can be obtained using In-doped SnS NPs.     

Evolution of crystalline structure in SnS thin films prepared by chemical deposition

Crystal structure and morphology undergo significant evolution in thin films of tin(II) sulfide prepared by chemical deposition, over a narrow interval of bath temperature of 20–40 °C, but has not been recognized in previous studies. The chemical bath is constituted using tin(II) chloride, triethanolamine, ammonia(aq.) and thioacetamide. At bath temperature of 20 °C, the deposition rate of the film is 10 nm/h; and at 24 h, a film of thickness 260 nm is obtained. This film is compact and with a predominantly cubic (Cub-) crystalline structure. At 40 °C, the deposition rate is 25 nm/h, and a film of 600 nm in thickness is deposited in 24 h. However, this film has evolved into vertically stacked platelets of orthorhombic (OR-) crystalline structure. The transition from compact-to-platelet morphology as well as from Cub-to-OR-crystalline structure is observed near a deposition temperature, 35 °C. The Cub-SnS has a characteristic high optical band gap, 1.67 eV (direct gap; forbidden transitions) with an electrical conductivity, 10⁻⁷(Ω cm)⁻¹; both properties being un-affected when films are heated at 300 °C in a nitrogen ambient. In OR-SnS, the band gap is 1.1 eV (indirect gap; allowed transitions). The electrical conductivity of such films is notably higher, 10⁻⁴ (Ω cm)⁻¹, which increases further by an order of magnitude when the films have been heated at 300 °C in nitrogen.     

PLD制备的Cu掺杂SnS薄膜的结构和光学特性

利用脉冲激光沉积(PLD)在玻璃衬底上制备了Cu掺杂SnS薄膜.靶材是由SnS和Cu₂S粉末混合压制而成(Cu和Sn的量比分别为0%、2.5%、5%、7.5%和10%).利用X射线衍射(XRD)、拉曼光谱仪(Raman)、原子力显微镜(AFM)、紫外-可见-近红外分光光度计(UV-Vis-NIR)、Keithley 4200-SCS半导体参数分析仪研究了Cu掺杂量对SnS薄膜的晶体结构、表面形貌、光学性质和电学性能的影响.结果表明:所制备的SnS薄膜样品沿(111)晶面择优取向生长, SnS :5%Cu薄膜的结晶质量最好且具有SnS特征拉曼峰.随着Cu掺杂量的增大, 平均颗粒尺寸逐渐增大.不同Cu掺杂量的薄膜在可见光范围内的吸收系数均为10⁵ cm^-1数 量级.SnS :5%Cu薄膜的禁带宽度E_g为2.23 eV, 光暗电导率比值为2.59.同时, 在玻璃衬底上制备了p-SnS :Cu/n-ZnS 异质结器件, 器件在暗态及光照的条件下均有良好的整流特性, 并具有较弱的光伏特性.     

Covalent Assembly of MoS2 Nanosheets with SnS Nanodots as Linkages for Lithium/Sodium-Ion Batteries

Weak van der Waals interactions between interlayers of two-dimensional layered materials result in disabled across-interlayer electron transfer and poor layered structural stability, seriously deteriorating their performance in energy applications. Herein, we propose a novel covalent assembly strategy for MoS₂ nanosheets to realize unique MoS₂/SnS hollow superassemblies (HSs) by using SnS nanodots as covalent linkages. The covalent assembly based on all-inorganic and carbon-free concept enables effective across-interlayer electron transfer, facilitated ion diffusion kinetics, and outstanding mechanical stability, which are evidenced by experimental characterization, DFT calculations, and mechanical simulations. Consequently, the MoS₂/SnS HSs exhibit superb rate performance and long cycling stability in lithium-ion batteries, representing the best comprehensive performance in carbon-free MoS₂-based anodes to date. Moreover, the MoS₂/SnS HSs also show excellent sodium storage performance in sodium-ion batteries.     

Synthesis of SnS2 Ultrathin Nanosheets as Anode Materials for Potassium Ion Batteries

Potassium(K)ion batteries present their promising application for large-scale energy storage systems with cost-effective characteristic.Unfortunately,the large K ion radius results in sluggish K ion diffusion kinetics and volume expansion of the electrode during the K ion insertion/extraction process.It is a challenge to explore capable anode materials with remarkable K ion storage ability.Herein,we design and prepare SnS2 ultrathin nanosheets via a facile hydrothermal process.When severing as anode materials for K ion batteries with optimized electrolyte,SnS2 presents an improved capacity and rate ability.The capable electrochemical performance is ascribed to the reduced ion diffusion pathway and capacitor-dominated K-ion storage process.In addition,the K ion storage mechanism of SnS2 is investigated by the ex-situ X-ray diffraction technique.     

Hierarchical Microboxes Constructed by SnS Nanoplates Coated with Nitrogen‐Doped Carbon for Efficient Sodium Storage

The design and synthesis of hierarchical microboxes, assembled from SnS nanoplates coated with nitrogen‐doped carbon (NC) as an anode material for sodium‐ion batteries, is demonstrated. The template‐engaged multistep synthesis of the SnS@NC microboxes involves sequential phase transformation, polydopamine coating, and thermal annealing in N₂. The SnS@NC composite with two‐dimensional nano‐sized subunits rationally integrates several advantages including shortening the diffusion path of electrons/Na⁺ ions, improving electric conductivity, and alleviating volume variation of the electrode material. As a result, the SnS@NC microboxes show efficient sodium storage performance with high capacity, good cycling stability, and excellent rate capability.     

外场下SnS分子结构及其特性

对S原子采用6-311++G**基组,Sn原子采用SDB-cc-pVTZ基组,利用密度泛函(B3P86)方法对SnS分子进行了基态结构优化,并研究了外场作用下SnS基态分子键长、能量、能级分布、电荷布居分布、谐振频率和红外谱强度的影响规律.然后利用含时密度泛函(TD-B3P86)方法研究了SnS分子在外场下的激发特性.结果表明,在所加的电场范围内(-0.04 a.u.-0.04 a.u.),随着正向电场的增大,分子键长和红外谱强度均是先减小后增大;总能E,SnS基态分子的最高已占据轨道能量EH和谐振频率均是先增大后减小;分子的最低未占空轨道能量EL和能隙Eg均随正向电场的增大而减小.随着正向电场的增大,SnS分子由基态至前9个单重激发态跃迁的波长增大,激发能则减小.     

Review on Tin (II) Sulfide (SnS) Material: Synthesis,Properties, and Applications

Tin (II) sulphide (SnS), a direct band gap semiconductor compound, has recently received great attention due to its unique properties. Because of low cost, absence of toxicity, and good abundance in nature, it is becoming a candidate for future multifunctional devices particularly for light conversion applications. Although the current efficiencies are low, the cost-per-Watt is becoming competitive. At room temperature, SnS exhibits stable low-symmetric, double-layered orthorhombic crystal structure, having a = 0.4329, b = 1.1192, and c = 0.3984 nm as lattice parameters. These layer-structured materials are of interest in various device applications due to the arrangement of structural lattice with cations and anions. The layers of cations are separated only by van der Waals forces that provide intrinsically chemically inert surface without dangling bonds and surface density of states. As a result, there is no Fermi level pinning at the surface of the semiconductor. This fact leads to considerably high chemical and environmental stability. Further, the electrical and optical properties of SnS can be easily tailored by modifying the growth conditions or doping with suitable dopants without disturbing its crystal structure.

In the last few decades, SnS has been synthesized and studied in the form of single-crystals and thin-films. Most of the SnS single-crystals have been synthesized by Bridgeman technique, whereas thin films have been developed using different physical as well as chemical deposition techniques. The synthesis or development of SnS structures in different forms including single-crystals and thin films, and their unique properties are reviewed here. The observed physical and chemical properties of SnS emphasize that this material could has novel applications in optoelectronics including solar cell devices, sensors, batteries, and also in biomedical sciences. These aspects are also discussed.     

Scalable Low‐Cost SnS2 Nanosheets as Counter Electrode Building Blocks for Dye‐Sensitized Solar Cells

A new type of semitransparent SnS₂ nanosheet (NS) films were synthesized using a simple and environmentally friendly solution‐processed approach, which were subsequently used as a counter electrode (CE) alternative to the noble metal Pt for triiodide reduction in dye‐sensitized solar cells (DSSCs). The resultant SnS₂‐based CE with a thickness of about 300 nm exhibited excellent electrochemical catalytic activity for catalyzing the reduction of triiodide and demonstrated comparable power conversion efficiency of 7.64 % with that of expensive Pt‐based CE in DSSCs (7.71 %). When functionalized with a small amount of carbon nanoparticles, the SnS₂ NS‐based CE showed even better performance of 8.06 % than Pt under the same conditions. Considering the facile fabrication method, optical transparency, low cost, and remarkable catalytic property, this study on SnS₂ NSs may shed light on the large‐scale production of electrocatalytic electrode materials for low‐cost photovoltaic devices.