CTAB辅助微波水热合成花簇状SnS微球

以氯化亚锡(SnCl2.2H2O)和硫代乙酰胺(TAA)为前驱物,十六烷基三甲基溴化铵(CTAB)为表面活性剂,采用微波水热法控制合成花簇状SnS微球。采用XRD和FESEM等分析手段对制备的样品进行表征。结果表明:合成的产物为正交晶系的SnS微晶,且结晶性良好;SnS微晶是由长方形纳米片自组装而成的花簇状微球。通过改变CTAB用量,可以实现花簇状SnS微晶的形貌和尺寸的调控,并初步分析了其形成过程。利用紫外-可见吸收光谱分析,产物的光学带隙约为1.51 eV;室温光致发光光谱表明,产物在832 nm处具有近红外发光特性。     

竹叶状多孔SnS薄膜的沉积

以硫代乙酰胺、三乙醇胺、氯化亚锡和氨水作反应物,氯化铵作缓冲剂,采用化学浴法在玻璃衬底上沉积SnS薄膜,并用X射线衍射(XRD)、扫描电子显微镜(SEM)等分析手段对样品进行了表征.XRD分析结果表明样品为斜方晶体结构的多晶SnS薄膜.SEM观察结果显示薄膜表面呈竹叶状多孔形貌,此结构有利于增加太阳电池的光吸收.     

MoS2/SnS异质结太阳能电池的模拟研究

硫化亚锡(SnS)是一种Ⅳ-Ⅵ族层状化合物半导体材料,其禁带宽度与太阳能电池最佳带隙1.5 eV非常接近,并且在可见光范围内光的吸收系数很大(α>10⁴ cm^-1),因此SnS是一种很有应用前景的材料。本文利用太阳能电池模拟软件wxAMPS模拟了MoS₂/SnS异质结太阳能电池,主要研究SnS吸收层的厚度、掺杂浓度和缺陷态等因素对太阳能电池性能的影响。研究发现:SnS吸收层最佳厚度为2 μm,最佳掺杂浓度为1.0×10¹⁵ cm^-3;同时高斯缺陷态浓度超过1.0×10¹⁵ cm^-3时,电池各项性能参数随着浓度的增加而减小,而带尾缺陷态超过1.0×10¹⁹ cm^-3·eV^-1时,电池性能才开始下降;其中界面缺陷态对太阳能电池影响比较严重,界面缺陷态浓度超过1.0×10¹² cm^-2时,开路电压、短路电流、填充因子和转换效率迅速下降。另外,通过模拟获得的转换效率高达24.87%,开路电压为0.88 V,短路电流为33.4 mA/cm²。由此可知,MoS₂/SnS异质结太阳能电池是一种很有发展潜力的光伏器件结构。     

Hierarchical Nanotubes Constructed by Carbon‐Coated Ultrathin SnS Nanosheets for Fast Capacitive Sodium Storage

Tin(II) sulfide (SnS) has been an attractive anode material for sodium ion batteries. Herein, an elegant templating method has been developed for the rational design and synthesis of hierarchical SnS nanotubes composed of ultrathin nanosheets. In order to enhance the electrochemical performance, carbon coated hierarchical SnS nanotubes (denoted as SnS@C nanotubes) have also been obtained by simply adding glucose into the reaction system. Benefiting from their unique structural merits, the SnS@C nanotubes exhibit enhanced sodium storage properties in terms of good cycling performance and superior rate capability.     

Influence of Ag thickness on the structural,optical, and electrical properties of the SnS/Ag/SnS trilayer films for solar cell application

We fabricated the SnS/Ag/SnS (SAS) trilayer thin films by a sputtering method at 200 $°C$. The structural, optical, and electrical properties of the films were studied by varying the Ag interlayer thickness from 9 to 27 nm. The EDS analysis revealed that all SAS trilayer films showed an increase in the atomic percentage of Ag from 1.87 to 6.18. The X-ray diffraction studies confirmed that SAS films with Ag-18 nm thickness showed a preferred (111) peak of the SnS with improved crystallinity. The optical absorption coefficient of the SAS films increased by a factor of 18 when compared to the SnS films without Ag. Also, the optical band gap decreased from 1.53 to 1.28 eV with Ag thickness. All SAS films exhibited the p-type conductivity with increased hole-concentration from 1.94 $\times$ ${10}^{14}$ to 4.15 $\times$${10}^{18}$cm⁻³ and also the mobility from 1.31 to 81.6 cm². V⁻¹s⁻¹.     

硫化亚锡有序纳米孔道阵列薄膜的制备与表征

以阳极氧化铝为模板,采用两步复型技术首次制备了一种SnS有序纳米孔道阵列薄膜。SEM和TEM测试结果显示此SnS有序多孔薄膜具有几乎均一的、紧密堆积的、直形的纳米孔道阵列结构,孔道直径约200mm,长度约1μm。EDS,XPS和XRD分析结果表明此SnS有序多孔薄膜的SnS骨架具有正交SnS的晶体结构,薄膜中锡与硫的原子比接近化学计量比1:1。     

源于功函数差异的界面内建电场调控载流子定向分离的作用机制研究

近年来,由有机污染物和重金属引起的水污染对人类健康、生态系统和社会可持续发展构成了严重威胁.而光催化技术以其高效、低成本、节能、无二次污染等优点成为解决日益严重的环境污染问题的一个极具吸引力的策略.众所周知,宽光谱吸收、高效载流子分离和快速的表面反应动力学是高性能光催化剂所必备的基本条件.而多孔TiO2空心球具有以下结构优势:(1)成本低、无毒、氧化还原电位适中、物理化学性质稳定;(2)中空结构有利于入射光多重散射,而且大表面积可以暴露更多的活性位点;(3)多孔结构有利于传质过程.但是,窄光谱吸收和低的光生载流子分离效率严重阻碍了空心结构TiO2的实际应用.因此,通过耦合窄带隙半导体构建异质结光催化剂可以有效提高光吸收和促进光生电荷的分离.窄带隙(Eg=2.18–2.44 eV)半导体材料SnS2具有无毒、化学性质稳定、低成本和宽谱响应等诸多优点.若将超薄SnS2纳米片锚定生长在多孔TiO2空心球表面,将对异质结的光催化性能产生显著的影响.一方面,分级结构的空心球具有高可见光捕获率;另一方面,超薄SnS2纳米片具有更短的载流子扩散距离,从而有效地抑制光生载流子在催化剂体相内部复合.然而,由于其能带结构的限制,二元TiO2/SnS2复合材料很容易形成嵌入式I型异质结,在很大程度上降低了光催化氧化还原能力.此外,在光催化剂表面聚集的光生电子和空穴容易发生随机性复合.因此,迫切需要通过引入界面驱动力来调节表面载流子的分离和转移.众多研究表明,通过化学功能化可以实现对还原氧化石墨烯(rGO)的能带结构、功函数、电导率、亲水性和光学性质的调控.功能化的rGO可以作为优良的空穴提取材料,在rGO两侧分别耦合不同能级结构的半导体光催化材料,通过异质界面能级和功函数差异带来的界面内建电场,精确调控光生载流子在界面间的空间分离和定向迁移.基于上述分析,本文通过改进的"硅保护煅烧"方法合成了分级多孔SnS2/rGO/TiO2空心球异质结光催化剂.分级多孔空心球的结构优势不仅增强其光捕获能力,而且为光氧化还原反应提供了丰富的活性位点.特别是,在TiO2和SnS2纳米薄片之间嵌入的rGO中间层可以作为空穴注入层.由不同功函数导致的界面内建电场可以精确地调控光生空穴从SnS2纳米薄片的价带向rGO空穴注入层定向迁移,显著延长了光生载流子的寿命.在可见光照射下,负载2 wt％rGO的分级多孔SnS2/rGO/TiO2空心球异质结光催化剂对罗丹明B染料的降解率可达97.3％,对Cr(VI)的还原效率可达97.09％.此外,经过六个周期的循环实验,该异质结催化降解罗丹明B和还原Cr(VI)的效率没有明显降低,表现出较好的光催化稳定性.     

SnS Nanosheets for Rapid and Effective Bacteria Sterilization Under Near-infrared Irradiation

Today, the threat of pathogenic bacterial infection worldwide that leads to the increase of mortality rate strongly demands the development of new antibacterial agents that can kill bacteria quickly and effectively. Although there are a lot of antibacterial agents that have been developed so far, few studies on the antibacterial performance of SnS have been investigated at 808 nm laser. Here, we synthesized SnS nanosheets with strong near-infrared absorption performance and excellent antibacterial performance via a simple solvothermal synthesis route. The as-prepared SnS nanosheets showed excellent photothermal conversion efficiency (38.7 %), photodynamic performance, and photostability, and at the same time 99.98 % and 99.7 % sterilization effect against Gram-negative Escherichia coli (E. coli) and Gram-positive Bacillus subtilis (B. subtilis) under near-infrared irradiation (808 nm, 1.5 W/cm²). This study suggests that SnS nanosheets could be a promising candidate for antibacterial therapy owing to the synergetic effects of photothermal and photodynamic performance.     

Preparation and characterization of electrodeposited SnS thin films

Tin sulfide (SnS) thin films have been deposited by electrodeposition using potentiostaic method on indium doped tin oxide (ITO) coated glass substrates from aqueous solution containing SnCl₂·2H₂O and Na₂S₂O₃ at various potentials. Good quality thin films were obtained at a cathodic potential −1000 mV versus saturated calomel electrode (SCE). The deposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and Fourier transform infrared (FTIR). X-ray diffraction analysis shows that the crystal structure of SnS thin films is orthorhombic with preferential orientation along 〈0 2 1〉 plane. Microstructural parameters such as crystallite size, micro strain, and dislocation density are calculated and found to depend upon cathodic potentials. SEM studies reveal that the SnS films exhibited uniformly distributed grains over the entire surface of the substrate. The optical transmittance studies showed that the direct band gap of SnS is 1.1 eV. FTIR was used to further characterize the SnS films obtained at various potentials.     

ZnIn2S4/SnS2 3D异质结的制备及其在可见光下高效还原Cr（Ⅵ）的应用（英文）

随着印染、纺织和镀铬等行业的不断发展,含有六价铬(Cr(VI))工业废水的大量排放造成严重的环境污染,威胁着人类健康.在过去的几十年中,废水中Cr(VI)去除的方法有很多,其中包括离子交换、膜分离、化学沉淀和吸附等.然而,这些传统的方法存在成本高、能耗高、效率低或者去除不彻底等缺点,阻碍了其广泛应用.在此背景下,光催化还原作为一种高效、绿色、有应用前景的Cr(VI)废水处理方法,受到越来越多科学家的关注.开发高效可见光响应光催化剂是实现光催化还原Cr(VI)应用的关键.ZnIn2S4是一种三元硫化物半导体材料,具有较强可见光吸收能力.但纯ZnIn2S4光生载流子复合严重以及可见光响应范围较窄导致其光催化性能较低.为了解决这一问题,构建异质结是一种常见的有效方法.SnS2具有合适的带隙(~2.2 eV),价格低廉,无毒且可见光吸收能力强.因此,构建ZnIn2S4/SnS2异质结有望实现高效可见光催化还原Cr(VI).本文通过简单的水热法成功制备了ZnIn2S4/SnS2三维(3D)异质结,并在可见光照射下对催化剂还原Cr(VI)性能进行了评价.实验结果显示,ZnIn2S4/SnS2 3D异质结光催化活性随着SnS2含量增加呈现先增加后减少的趋势.当SnS2与ZnIn2S4的质量比为1:10时,ZnIn2S4/SnS2 3D异质结催化还原Cr(VI)效率最高.可见光照射下反应70 min,Cr(VI)(50 mg/L)的还原效率达到100%,远高于纯ZnIn2S4和SnS2.荧光光谱分析(PL)和紫外-可见吸收光谱(UV-Vis)显示,光生载流子分离效率和光吸收效率的增强是还原Cr(VI)性能增加的两个原因.此外,经过三个周期的循环实验,ZnIn2S4/SnS2 3D异质结催化还原Cr(VI)效率没有明显降低,表现出较好的光催化稳定性.