SnS2/graphene nanocomposite: A high rate anode material for lithium ion battery

In this work,via a facile solvothermal route,we synthesized an anode material for lithium ion batteries(LIBs)—SnS_2 nanoparticle/graphene(SnS_2 NP/GNs) nanocomposite.The nanocomposite consists of SnS_2nanoparticles with an average diameter of 4 nm and graphene nanosheets without restacking.The SnS_2 nanoparticles are firmly anchored on the graphene nanosheets.As an anode material for LIBs,the nanocomposite exhibits good Li storage performance especially high rate performance.At the high current rate of 5,10,and 20 A/g,the nanocomposite delivered high capacities of 525,443,and 378 mAh/g,respectively.The good conductivity of the graphene nanosheets and the small particle size of SnS_2contribute to the electrochemical performance of SnS_2 NP/GNs.     

SnS2纳米花/石墨烯纳米复合物的一步法合成及其增强的锂离子存储性能

SnS₂ is considered as an attractive anode material to substitute commercial graphite anodes of lithium-ion batteries due to its high specific capacity of 645 mAh·g^-1 as well as low cost. Nevertheless, it suffers poor large volume expansion during the lithiation/delithiation processes, leading to the loss of electrical contact and rapid capacity fading. Herein, by using a facile one-step solvothermal method, SnS₂ nanoflower/graphene nanocomposites (SnS₂ NF/GNs) were prepared, where flower-like SnS₂ hierarchical nanostructures consisting of ultrathin nanoplates, are tightly enwrapped in graphene nanosheets. As anode materials for lithium-ion batteries, the SnS₂ NF/GNs electrode exhibit superior electrochemical performance, with a reversible capacity of 523 mAh·g^-1 after 200 charge-discharge cycles. The enhanced Li storage performance was attributed to the synergistic effect of SnS₂ and graphene. The SnS₂ NF can effectively accommodate the volume change and shorten Li⁺ diffusion distance, while graphene nanosheets can further alleviate the volume expansion of SnS₂ and improve the electronic conductivity.     

膜厚对射频磁控溅射法制备的SnS薄膜结构和光学性质的影响

利用射频磁控溅射法在玻璃衬底上制备SnS薄膜,用X射线衍射(XRD)、能谱仪(EDS)、原子力显微镜(AFM)、场发射扫描电镜(FE-SEM)和紫外-可见-近红外分光光度计(UV-Vis-NIR)分别对所制备的薄膜晶体结构、组分、表面形貌、厚度、反射率和透过率进行表征分析。研究结果表明:薄膜厚度的增加有利于改善薄膜的结晶质量和组分配比,晶粒尺寸和颗粒尺寸随着厚度的增加而变大。样品的折射率在1 500~2 500 nm波长范围内随着薄膜厚度的增加而增大。样品在可见光区域吸收强烈,吸收系数达10⁵ cm^-1量级。禁带宽度在薄膜厚度增加到1 042 nm时为1.57 eV,接近于太阳电池材料的的最佳光学带隙(1.5 eV)。     

Synthesis of SnS thin films via galvanostatic electrodeposition and fabrication of CdS/SnS heterostructure for photovoltaic applications

In this work SnS thin films were electrochemically deposited on ITO coated glass substrate by galvanostatic electrodeposition at different pH of the plating bath. The working electrode used in these studies was low cost high purity graphite rod. The as-deposited films were found to be smooth, pinhole free and well adherent to the substrate with no powdery deposition. EDX measurements revealed that all the SnS films were non-stoichiometric in nature with variation from Sn-excess to S-excess compositions. XRD pattern showed that all the SnS thin films had orthorhombic polycrystalline structure. The direct bandgaps of all the films were found to be in the range 1.54-1.58 eV. ITO/SnS/In structure exhibited linear current-voltage characteristics, establishing the ohmic nature of both ITO/SnS and SnS/In junctions. Furthermore, SnS layer was grown on CdS film using electrodeposition technique. The heterostructure ITO/CdS/SnS/In was characterized under dark and illuminated conditions. From forward biased I-V characteristics several junction parameters like barrier height, diode ideality factor and series resistance of the heterostructure were extracted using Cheung model.     

A Plasma‐Triggered O−S Bond and P−N Junction Near the Surface of a SnS2 Nanosheet Array to Enable Efficient Solar Water Oxidation

A photoelectrochemical (PEC) cell can split water into hydrogen and oxygen with the assistance of solar illumination. However, its application is still limited by excessive bulk carrier recombination and sluggish surface oxygen evolution reaction (OER) kinetics. Taking SnS₂ as an example, a promising layered optoelectronic semiconductor, Ar plasma treatment strategy was used to introduce a SnS/SnS₂ P?N heterojunction and O?S bond near the surface of a SnS₂ nanosheet array, simultaneously increasing the separation efficiency of photogenerated electron–hole pairs in the bulk and lowering the OER overpotential at the surface. The onset potential of the plasma‐treated SnS₂ nanosheet array shifts negatively to 0.16 V, and the photocurrent density at 1.23 V vs. RHE boosts to 2.15 mA cm^?2, which is 7 times that of pristine SnS₂. This work demonstrates a facile plasma treatment strategy to modulate the energy band structure and surface chemical states for improved PEC performance.     

Toward Understanding the Enhanced Pseudocapacitive Storage in 3D SnS/MXene Architectures Enabled by Engineered Surface Reactions

The optimization of three-dimensional (3D) MXene-based electrodes with desired electrochemical performances is highly demanded. Here, a precursor-guided strategy is reported for fabricating the 3D SnS/MXene architecture with tiny SnS nanocrystals (≈5 nm in size) covalently decorated on the wrinkled Ti₃C₂T_x nanosheets through Ti−S bonds (denoted as SnS/Ti₃C₂T_x-O). The formation of Ti−S bonds between SnS and Ti₃C₂T_x was confirmed by extended X-ray absorption fine structure (EXAFS). Rather than bulky SnS plates decorated on Ti₃C₂T_x (SnS/Ti₃C₂T_x-H) by one-step hydrothermal sulfidation followed by post annealing, this SnS/Ti₃C₂T_x-O presents size-dependent structural and dynamic properties. The as-formed 3D hierarchical structure can provide short ion-diffusion pathways and electron transport distances because of the more accessible surface sites. In addition, benefiting from the tiny SnS nanocrystals that can effectively improve Na⁺ diffusion and suppress structural variation upon charge/discharge processes, the as-obtained SnS/Ti₃C₂T_x-O can generate pseudocapacitance-dominated storage behavior enabled by engineered surface reactions. As predicted, this electrode exhibits an enhanced Na storage capacity of 565 mAh g⁻¹ at 0.1 A g⁻¹ after 75 cycles, outperforming SnS/Ti₃C₂T_x-H (336 mAh g⁻¹), SnS (212 mAh g⁻¹), and Ti₃C₂T_x (104 mAh g⁻¹) electrodes.     

Nanoscale MnII‐Coordination Polymers for Cell Imaging and Heterogeneous Catalysis

A mixed ligand approach was exploited to synthesize a new series of Mn^II‐based coordination polymers (CPs), namely, CP1 {[Mn(μ‐dpa)(μ‐4,4′‐bp)]?MeOH}_∞, CP2 {[Mn₃(μ‐dpa)₃(2,2′‐bp)₂]}_∞, CP3 {[Mn₃(μ‐dpa)₃(1,10‐phen)₂]?2 H₂O}_∞, CP4 {[Mn(μ‐dpa)(μ‐4,4′‐bpe)_1.5]?H₂O}_∞, CP5 {[Mn₂(μ‐dpa)₂(μ‐4,4′‐bpe)₂]? DEF}_∞, and CP6 {[Mn(μ‐dpa)(μ‐4,4′‐bpe)_1.5]? DMA}_∞ (dpa=3,5‐dicarboxyphenyl azide, 2,2′‐bp=2,2′‐bipyridine, 1,10‐phen=1,10‐phenanthroline, 4,4′‐bpe=1,2‐bis(4‐pyridyl)ethylene, 4,4′‐bp=4,4′‐bipyridine, DEF=N,N‐diethylformamide, DMA=N,N‐dimethylacetamide), to develop multifunctional CPs. Various techniques, such as single‐crystal X‐ray diffraction (SXRD), FTIR spectroscopy, elemental analysis, and thermogravimetric analysis, were employed to fully characterize these CPs. The majority of the CPs displayed a four‐connected sql topology, whereas CP4 and CP6 exhibited a two‐dimensional SnS network architecture, which was further entangled in a polycatenation mode. Compound CP1 displayed an open framework structure. The CPs were scaled down to the nanoregime in a ball mill for cell imaging studies. Whereas CP2 and CP4 were employed for cell imaging with RAW264.7 cells, CP1 was exploited for both cell imaging and heterogeneous catalysis in a cyanosilylation reaction.     

超声辅助液相合成多晶SnS纳米粉

本文以Na2S·9H2O和SnCl2·2H2O为反应源物,采用超声辅助液相合成法制备SnS纳米粉.用XRD、TEM和TED等方法对粉体样品进行了表征,检测结果表明粉体样品为具有斜方晶体结构的SnS纳米微粒,其平均晶粒尺寸约为15～25nm.论文还简要讨论了超声波对SnS纳米粉形成的影响,分析认为超声辅助手段的加入有利于多晶SnS纳米粉的形成.     

SnS Nanosheets for 105th Harmonic Soliton Molecule Generation

As a member of the 2D group IV monochalcogenides (MX; M = Sn, Ge; X = S, Se), SnS has attracted great interest due to its outstanding optical, electrical, and optoelectronic properties. Especially, SnS nanosheets material have a large absorption coefficient and high photoelectric conversion efficiency, it can be potentially used in optical modulators, saturable absorbers, solar cells, supercapacitors, and other optical devices. However, the nonlinear optical properties of SnS nanosheets and their applications in ultrafast photonics are seldom studied. In this paper, the nonlinear optical properties of SnS nanosheets have been characterized through a dual‐balance detection system, whose modulation depth is 5.8%. More importantly, 105th harmonic soliton molecule based on SnS saturable absorbers has been realized for the first time to the authors’ knowledge. A compact mode‐locked fiber laser with a pulse duration of 1.02 ps and a repetition rate of 459 MHz is realized near 1.5 µm. It is demonstrated that SnS nanosheets have outstanding nonlinear properties and play an extremely important role in the field of ultrafast photonics.